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1N5237B

1N5237B

  • 厂商:

    TSC

  • 封装:

  • 描述:

    1N5237B - 0.5W Hermetically Sealed Glass Zener Diodes - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
1N5237B 数据手册
1N5221B - 1N5263B 0.5W Hermetically Sealed Glass Zener Diodes Pb RoHS RoHS COMPLIANCE DO-35 Features Zener voltage range 2.4 to 56 volts DO-35 package (JEDEC) Through-hole device type mounting Hemetically sealed glass Compression bonded construction All extermal surface are corrosion resistant and leads are readily solderable RoHS compliant Solder hot dip Tin(Sn) lead finish Cathode indicated by polarity band Dimensions is inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25oCambient temperature unless otherwise specified. Type Number Power Dissipation Forward Voltage @ IF=200mA Operating and Storage Temperature Range Symbol Pd VF TJ, TSTG Value 500 1.1 -65 to + 200 Units mW V O C Version: A07 RATINGS AND CHARACTERISTIC CURVES (1N5221B THRU 1N5263B) RthJA - Therm. Resist. Junction Ambient (K/W) VZtn - Relative Voltage Change 500 400 300 l 200 100 TL = constant 0 0 5 10 15 20 95 9611 1.3 VZtn = VZt/VZ (25 °C) 1.2 1.1 1.0 0.9 0.8 - 60 95 9599 TKVZ = 10 x 10-4/K 8 x 10-4/K 6 x 10-4/K 4 x 10-4/K 2 x 10-4/K l 0 - 2 x 10-4/K - 4 x 10-4/K 0 60 120 180 240 I - Lead Length (mm) Tj - Junction Temperature (°C) Figure 1. Thermal Resistance vs. Lead Length Figure 3. Typical Change of Working Voltage vs. Junction Temperature Ptot - Total Power Dissipation (mW) 1000 VZ - Voltage Change (mV) 600 500 400 300 200 100 0 0 Tj = 25 °C 100 IZ = 5 mA 10 1 0 95 9598 5 10 15 20 25 95 9602 40 80 120 160 200 VZ - Z-Voltage (V) Tamb - Ambient Temperature (°C) Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb = 25 °C Figure 4. Total Power Dissipation vs. Ambient Temperature Version: A07 RATINGS AND CHARACTERISTIC CURVES (1N5221B THRU 1N5263B) TKVZ - Temperature Coefficient of VZ (10-4/K) 15 100 80 Ptot = 500 mW Tamb = 25 °C 10 IZ - Z-Current (mA) 60 40 20 0 5 IZ = 5 mA 0 -5 0 95 9600 10 20 40 30 VZ - Z-Voltage (V) 50 0 95 9604 4 6 8 12 20 VZ - Z-Voltage (V) Figure 5. Temperature Coefficient of Vz vs. Z-Voltage Figure 8. Z-Current vs. Z-Voltage 200 CD - Diode Capacitance (pF) 50 40 30 20 10 0 15 95 9607 150 VR = 2 V Tj = 25 °C 100 50 0 0 95 9601 IZ - Z-Current (mA) Ptot = 500 mW Tamb = 25 °C 5 10 15 20 25 20 25 30 35 VZ - Z-Voltage (V) VZ - Z-Voltage (V) Figure 6. Diode Capacitance vs. Z-Voltage Figure 9. Z-Current vs. Z-Voltage 10 Tj = 25 °C rZ - Differiential Z-Resistance (Ω) 100 IF - Forward Current (mA) 1000 IZ = 1 mA 100 5 mA 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 10 10 mA 1 Tj = 25 °C 0 95 9606 5 10 15 20 25 95 9605 VF - Forward Voltage (V) VZ - Z-Voltage (V) Figure 7. Forward Current vs. Forward Voltage Figure 10. Differential Z-Resistance vs. Z-Voltage Version: A07 RATINGS AND CHARACTERISTIC CURVES (1N5221B THRU 1N5263B) Z thp –Thermal Resistance for Pulse Cond. (KW) 1000 tp/T = 0.5 100 tp/T = 0.2 Single Pulse 10 tp/T = 0.1 tp/T = 0.02 i ZM = (–VZ+(V Z2+4rzj x T/Zthp)1/2)/(2rzj) 100 101 tp – Pulse Length (ms) tp/T = 0.05 1 10-1 tp/T = 0.01 RthJA = 300 K/W T = Tjmax–Tamb 102 95 9603 Figure 11. Thermal Response Version: A07 ELECTRICAL CHARACTERISTICS (Ratings at TA=25oC ambient temperature unless otherwise specified). Device Vz @ Izt Voltage Nominal 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56 Current IZT (mA) 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9.0 8.5 7.8 7.4 7.0 6.6 6.2 5.6 5.2 5.0 4.6 4.5 4.2 3.8 3.4 3.2 3.0 2.7 2.5 2.2 ZZT @ IZT Ω Max. ZZK @IZK=0.25mA Ω Max. IR @ V R uA 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 1N5236B 1N5237B 1N5238B 1N5239B 1N5240B 1N5241B 1N5242B 1N5243B 1N5244B 1N5245B 1N5246B 1N5247B 1N5248B 1N5249B 1N5250B 1N5251B 1N5252B 1N5253B 1N5254B 1N5255B 1N5256B 1N5257B 1N5258B 1N5259B 1N5260B 1N5261B 1N5262B 1N5263B Notes: 30 30 30 30 29 28 24 23 22 19 17 11 7 7 5 6 8 8 10 17 22 30 13 15 16 17 19 21 23 25 29 33 35 41 44 49 58 70 80 93 105 125 150 1200 1250 1300 1400 1600 1600 1700 1900 2000 1900 1600 1600 1600 1000 750 500 500 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 700 700 800 900 1000 1100 1300 Max. 100 100 75 75 50.0 25.0 15.0 10.0 5.0 5.0 5.0 5.0 5.0 5.0 3.0 3.0 3.0 3.0 3.0 2.0 1.0 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 VR (Volts) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 3.0 3.5 4.0 5.0 6.0 6.5 6.5 7.0 8 8.4 9 10 10 11 12 13 14 14 15 17 18 19 21 21 23 25 27 30 33 36 39 43 1. The type numbers listed have zener voltage as whown and have a standard tolerance on the nominal zener voltage of ±5%. Device of ±2% is indicated by a "C" instead of a "B". 2. Nominal zener voltages between the voltages shown and tighter voltage, for detalied information on price, availability and delivery. 3. The zener voltage(VZ) is tested under pulse condition. The measured VZ is guaranteed to be within specification with device junction in thermal equilibrium. 4. Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the dc zener current (I ZT) is superimposed to I ZT. Version: A07
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