BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor
Small Signal Transistor
SOT-23
3 Collector A F
1 Base
2 Emitter B E C
Features
Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code
D
Mechanical Data
Case : SOT- 23 small outline plastic package Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260°C/10s Weight : 0.008gram (approximately)
Dimensions A B C D E F
Unit (mm) Min 2.80 1.20 0.30 1.80 2.25 0.90 Max 3.00 1.40 0.50 2.00 2.55 1.20
Unit (inch) Min 0.110 0.047 0.012 0.071 0.089 0.035 Max 0.118 0.055 0.020 0.079 0.100 0.043
Ordering Information
Package Part No. Packing 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel 3K / 7" Reel Marking 3A 3B 3E 3F 3G 3J 3K 3L 3A 3B 3E 3F 3G 3J 3K 3L SOT-23 BC856A RF SOT-23 BC856B RF SOT-23 BC857A RF SOT-23 BC857B RF SOT-23 BC857C RF SOT-23 BC858A RF SOT-23 BC858B RF SOT-23 BC858C RF SOT-23 BC856A RFG SOT-23 BC856B RFG SOT-23 BC857A RFG SOT-23 BC857B RFG SOT-23 BC857C RFG SOT-23 BC858A RFG SOT-23 BC858B RFG SOT-23 BC858C RFG
Suggested PAD Layout
0.95 0.037
2.0 0.079 0.9 0.035 0.8 0.031
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number Power Dissipation Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction and Storage Temperature Range BC856 BC857 BC858 BC856 BC857 BC858 Symbol PD VCBO VCEO VEBO IC TJ, TSTG Value 250 -80 -50 -30 -65 -45 -30 -5 -0.1 -55 to + 150 Units mW V V V A °C
Notes:1. Valid provided that electrodes are kept at ambient temperature
Version : E11
BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor
Small Signal Transistor
Electrical Characteristics
Type Number Collector-Base Breakdown Voltage BC856 BC857 BC858 BC856 BC857 BC858 IC= -10μA IC= -10mA IE= -1μA VCB= -30V VEB= -5V VCE= -5V IE= 0 IB= 0 IC= 0 IE= 0 IC=0 IC= -2mA Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Min -80 -50 -30 -65 -45 -30 -5 125 220 420 100 Max Units V
Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC current gain
-15 -0.1 250 475 800 -0.65 -1.1 -
V V nA μA
BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC857C, BC858C
Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency VCE= -5V
IC= -100mA IB= -5mA IC= -100mA IB= -5mA IC= -10mA f= 100MHz
V V MHz
Tape & Reel specification
TSC label
Top Cover Tape
Carieer Tape Any Additional Label (If Required)
P0 d T A C B
P1
Item Carrier width Carrier length Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width
Symbol A B C d D D1 D2 E F P0 P1 T W W1
Dimension(mm) 3.15 ±0.10 2.77 ±0.10 1.22 ±0.10 1.50 ± 0.10 178 ± 1 55 Min 13.0 ± 0.20 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.05 0.229 ±0.013 8.10 ±0.20 12.30 ±0.20
E F W
W1
D
D2
D1
Direction of Feed
BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor
Small Signal Transistor Rating and Characteristic Curves
Figure 1. Static Characteristic
-50 -45
1000
Figure 2. DC Current Gain
IC[mA], COLLECTOR CURRENT
-40 -35 -30 -25 -20 -15 -10 -5 -0 -0 -2 -4 -6 -8
IB = - 400µ A IB = - 350µA IB = - 250µA IB = - 200µA IB = - 150µA IB = - 100µA IB = - 50µA
10 -0.1
VCE = - 5V
hFE, DC CURRENT GAIN
IB = - 300µA
100
-10
-12
-14
-16
-18
-20
-1
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-10 -100
Figure 4. Base-Emitter On Voltage
IC = 10 IB
-1
V BE(sat)
IC[mA], COLLECTOR CURRENT
VCE = - 5V
-10
-0.1
-1
VCE(sat)
-0.01 -0.1
-0.1 -1 -10 -100 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Collector Output Capacitance
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
Figure 6. Current Gain Bandwidth Product
1000
f=1MHz IE=0
f=1MHz IE=0
Cob[pF], CAPACITANCE
10
100
1 -1 -10 -100
10 -1 -10
VCB[V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Version : E11
BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor
Small Signal Transistor Rating and Characteristic Curves
Figure 7. DC current gain as a function of collector current; typical values
Figure 8. Base-emitter voltage as a function of collector current; typical values
hFE-IC
VBE-IC
Version : E11
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