0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
HER806G

HER806G

  • 厂商:

    TSC

  • 封装:

  • 描述:

    HER806G - 8.0 AMPS. Glass Passivated High Efficient Rectifiers - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
HER806G 数据手册
HER801G - HER808G 8.0 AMPS. Glass Passivated High Efficient Rectifiers R-6 Features Glass passivated chip junction. H igh efficiency, Low VF H igh current capability H igh reliability H igh surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application. M echanical Data C ase: Molded plastic Epoxy: UL 94V0 rate flame retardant Lead: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Polarity: Color band denotes cathode H igh temperature soldering guaranteed: o 260 C/10 seconds/.375”,(9.5mm) lead lengths at 5 lbs., (2.3kg) tension M ounting position: Any W eight: 1.65 grams Dimensions in inches and (millimeters) M aximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .375 (9.5mm) Lead Length o @TA = 55 C Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 8.0A M aximum DC Reverse Current @TA=25 oC at Rated DC Blocking Voltage @ TA=125 oC Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance Operating Temperature Range ( Note 2 ) Symbol HER HER HER HER HER HER HER HER VRRM VRMS VDC I(AV) IFSM VF IR 1.0 50 35 50 801G 802G 803G 804G 805G 806G 807G 808G Units V V V A 100 200 300 400 600 800 1000 70 140 210 280 420 560 700 100 200 300 400 600 800 1000 8.0 150 1.3 10 400 50 100 -65 to +150 -65 to +150 80 65 1.7 A V uA uA nS pF o C o C Trr Cj TJ Storage Temperature Range TSTG 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Notes: 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. Version: A06 RATINGS AND CHARACTERISTIC CURVES (HER801G THRU HER808G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 9.0 FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 AVERAGE FORWARD CURRENT. (A) 7.5 6.0 4.5 INSTANTANEOUS REVERSE CURRENT. ( A) Single Phase Half Wave 60Hz Resistive or Inductive Load 0.375" (9.5mm) Lead Length 100 Tj=125 0C 10 Tj=75 0C 3.0 1.5 1 Tj=25 0C 0 0 25 50 75 100 O 125 150 175 CASE TEMPERATURE. ( C) FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 225 0.1 PEAK FORWARD SURGE CURRENT. (A) 200 175 150 125 100 75 50 8.3ms Single Half Sine Wave JEDEC Method 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.5- TYPICAL FORWARD CHARACTERISTICS 100 25 0 1 10 50 100 1000 NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD CURRENT. (A) 10 HE FIG.4- TYPICAL JUNCTION CAPACITANCE 175 150 R8 05 G JUNCTION CAPACITANCE.(pF) 125 100 1 HER801G-HER804G HE HE R8 01 G~ HE 75 50 25 R8 R8 05 06G G ~H ER 808 G 0.1 HER806G-HER808G 0 0.1 0.5 1 2 5 10 20 50 100 200 500 800 REVERSE VOLTAGE. (V) 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 NONINDUCTIVE 10 NONINDUCTIVE +0.5A DUT (-) PULSE GENERATOR (NOTE 2) NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06
HER806G 价格&库存

很抱歉,暂时无法提供与“HER806G”相匹配的价格&库存,您可以联系我们找货

免费人工找货