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SFAS804G

SFAS804G

  • 厂商:

    TSC

  • 封装:

  • 描述:

    SFAS804G - 8.0 AMPS. Surface Mount Super Fast Rectifiers - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
SFAS804G 数据手册
SFAS801G - SFAS808G 8.0 AMPS. Surface Mount Super Fast Rectifiers D2PAK Features H igh efficiency, low VF H igh current capability H igh reliability H igh surge current capability Low power loss. For use in low voltage, high frequency inventor, free wheeling, and polarity protection application M echanical Data C ases: D PAK Molded plastic E poxy: UL 94V-0 rate flame retardant Terminals: Pure tin plated, lead free. solderable per MIL-STD-202, Method 208 guaranteed P olarity: As marked H igh temperature soldering guaranteed: o 260 C/10 seconds/.16”,(4.06mm) from case. W eight: 2.24 grams 2 Dimensions in inches and (millimeters) R ating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number M aximum Recurrent Peak Reverse Voltage M aximum RMS Voltage M aximum DC Blocking Voltage M aximum Average Forward Rectified o Current @TC = 100 C Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) M aximum Instantaneous Forward Volta ge @ 8.0A M aximum DC Reverse Current o @ T A=25 C at Rated DC Blocking o Voltage @ TA=100 C M aximum Reverse Recovery Time(Note1) Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) O perating Temperature Range M aximum Ratings and Electrical Characteristics Symbol SFAS SFAS SFAS SFAS SFAS SFAS SFAS SFAS U nits 801G 802G 803G 804G 805G 806G 807G 808G V RRM V RMS V DC I(AV) IFSM VF IR Trr Cj R θJC TJ 50 35 50 100 70 100 150 105 150 200 140 200 300 210 300 400 280 400 500 350 500 600 420 600 V V V A A 8.0 125 0.975 10 400 35 80 2.2 -65 to +150 -65 to +150 60 1.3 1.7 V uA uA nS pF o C/W o C o C Storage Temperature Range TSTG 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A N otes: 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 3. Mounted on Heatsink size of 2” x 3” x 0.25”. - 186 - Version: B07 RATINGS AND CHARACTERISTIC CURVES (SFAS801G THRU SFAS808G) AVERAGE FORWARD CURRENT. (A) 10 8 FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE INSTANTANEOUS REVERSE CURRENT. ( A) FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 6 4 2 0 100 TJ=100 0C 10 0 50 CASE TEMPERATURE. ( C) o 100 150 PEAK FORWARD SURGE CURRENT. (A) 150 120 FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT TJ=125 0C 8.3ms Single Half Sine Wave JEDEC Method 1 TJ=25 0C 0.1 0 20 40 60 80 100 120 140 90 60 30 INSTANTANEOUS FORWARD CURRENT. (A) 0 PERCENT OF RATED PEAK REVERSE VOLT AGE. (%) FIG.5- TYPICAL FORWARD CHARACTERISTICS 100 30 1G ~S FA S8 0 SF AS 80 G 806 AS ~SF 5G G S80 808 AS SFA ~SF 07G S8 SFA 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz 10 FIG.4- TYPICAL JUNCTION CAPACIT ANCE 100 Tj=25 0C 3 1 90 CAPACITANCE.(pF) 80 0.3 0.1 70 60 50 40 1 2 0.03 0.01 0.4 Tj=25oC Pulse Width=300 s 1% Duty Cycle 5 10 20 50 100 200 500 1000 0.6 0.8 1.0 1.2 4G FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr G 04 S8 G FA 08 ~S S8 1G FA 80 ~S AS 5G SF 80 AS SF REVERSE VOLTAGE. (V) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms 1.4 1.6 1.8 FORWARD VOLT AGE. (V) -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: B07
SFAS804G 价格&库存

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