TSD882_11

TSD882 Low Vcesat NPN Transistor TO-126 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) 50V 50V 3A 0.5V @ IC / IB = 2A / 200mA Features ● ● Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSB772 Ordering Information Part No. TSD882CK B0 TSD882CK B0G Package TO-126 TO-126 Packing 250pcs / Bulk 250pcs / Bulk Structure ● ● Epitaxial Planar Type NPN Silicon Transistor Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single pulse, Pw≤350us, Duty≤2% DC Pulse Ta = 25 C Tc = 25 C o o Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit 50 50 5 3 7 (note) 1 10 +150 - 55 to +150 Unit V V V A W o o C C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Conditions IC = 50uA, IE = 0 IC = 1mA, IB = 0 IE = 50uA, IC = 0 VCB = 50V, IE = 0 VEB = 3V, IC = 0 IC / IB = 2A / 200mA IC / IB = 2A / 200mA VCE = 2V, IC = 1A VCE =6V, IC=50mA, f=100MHz VCB = 10V, f=1MHz Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *VBE(SAT) *hFE fT Cob Min 60 50 5 ----100 --- Typ -----0.25 --90 45 Max ---1 1 0.5 2 500 --- Unit V V V uA uA V V MHz pF * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% 1/4 Version: B11 TSD882 Low Vcesat NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Power Derating Curve 2/4 Version: B11 TSD882 Low Vcesat NPN Transistor TO-126 Mechanical Drawing DIM ∝1 ∝2 ∝3 ∝4 A B C D E F G H I J K L M TO-126 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 3ºC -3ºC -3ºC 3ºC --3ºC 3ºC --3ºC 3ºC --0.150 0.153 3.81 3.91 0.275 0.279 6.99 7.09 0.531 0.610 13.50 15.50 0.285 0.303 7.52 7.72 0.034 0.041 0.95 1.05 0.028 0.031 0.71 0.81 0.048 0.052 1.22 1.32 0.170 0.189 4.34 4.80 0.095 0.105 2.41 2.66 0.045 0.055 1.14 1.39 0.045 0.055 1.14 1.39 -0.021 -0.55 0.137 0.152 3.50 3.86 3/4 Version: B11 TSD882 Low Vcesat NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: B11