TSM301K12

TSM301K12 20V P-Channel MOSFET with Schottky Diode TDFN 2x2 Pin Definition: 1. Anode 6. Cathode 2. NC 5. Gate 3. Drain 4. Source PRODUCT SUMMARY VDS (V) RDS(on)(m ) 94 @ VGS = -4.5V -20 131 @ VGS = -2.5V 185 @ VGS = -1.8V ID (A) -2.8 -2.3 -0.54 SCHOTTKY PRODUCT SUMMARY VR (V) VF (V) IF (A) 20 0.5 2 Features ● ● ● Configuration with MOSFET and Low Vf SKY Package low profile 0.75mm (Typ) Independent Pin Out for Design Flexibility Block Diagram Application ● ● ● ● Load Switch for Portable Applications DC-DC Buck Circuit Li-ion Battery Applications Cellular Charger Switch P-Channel MOSFET with Schottky Diode Ordering Information Part No. Package Packing 3Kpcs / 7” Reel TSM301K12CQ RLG TDFN 2x2 Note: “G” denotes for Halogen Free MOSFET Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1,2) Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range TC=25 C TA=25 C (Note 2) o o Symbol VDS VGS ID IDM PD Limit -20 ±12 -4.5 -8 6.5 1.56 +150 - 55 to +150 Unit V V A A W W o o TJ TJ, TSTG C C Schottky Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Reverse Voltage Average Forward Current (Note 1,2) Pulsed Forward Current Maximum Power Dissipation (Note 1) TC=25 C TA=25 C (Note 2) o o Symbol VR IF IFM PD Limit 20 2 5 6.8 1.47 Unit V A A W W 1/7 Version: B11 TSM301K12 20V P-Channel MOSFET with Schottky Diode Thermal Resistance Ratings Parameter MOSFET Thermal Resistance-Junction to Ambient Schottky Thermal Resistance-Junction to Ambient T ≤ 5s Steady State RӨJA 85 130 o o Symbol T≤ 5s Steady State RӨJA Limit 80 120 Unit o o C/W C/W C/W C/W Notes: 1. Surface mounted on 1” x 1” (2 oz) FAR4 board, 2. t ≤ 5s MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Diode Forward Voltage Dynamic b a Conditions VGS = 0V, ID = -250uA VDS = VGS, ID = -250µA VGS = ±12V, VDS = 0V VDS =-20V, VGS = 0V VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -2.3A VGS = -1.8V, ID = -0.54A IS = -1.6A, VGS = 0V Symbol BVDSS VGS(TH) IGSS IDSS RDS(ON) VSD Qg Qgs Qgd Ciss Coss Crss td(on) Min -20 -0.5 ----------------- Typ --------5.2 1.36 0.6 5.2 9.7 19 29 295 170 65 Max --±100 -1 94 131 185 -1.2 10 ---------- Unit V V nA µA m V Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c VDS = -6V, ID = -2.8A, VGS = -5V VGS=0V, VDS=-6V, f =1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDS=-15V, RD=15 , RG=6 , VGS=-10V tr td(off) tf nS Schottky Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Forward Voltage Drop Maximum Reverse Leakage Current Conditions IF = 1A VR = 5V VR = 20V Symbol VF IRm Min ----- Typ -0.015 0.02 60 Max 0.5 0.08 0.10 -- Unit V mA pF Junction Capacitance VR = 10V CT Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. 2/7 Version: B11 TSM301K12 20V P-Channel MOSFET with Schottky Diode MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/7 Version: B11 TSM301K12 20V P-Channel MOSFET with Schottky Diode Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/7 Version: B11 TSM301K12 20V P-Channel MOSFET with Schottky Diode SCHOTTKY Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Typical Forward Current Derating Curve Typical Instantaneous Forward Characteristics Typical Reverse Characteristics Typical Junction Capacitance Maximum Repetitive Forward Surge Current 5/7 Version: B11 TSM301K12 20V P-Channel MOSFET with Schottky Diode TDFN 2x2 Mechanical Drawing DIM A B C D E F G H J K MILLIMETERS MIN MAX 1.95 2.05 1.95 2.05 0.50 0.60 0.30 0.40 0.20 0.30 0.65 BSC 0.75 0.85 0.70 0.80 -0.05 0.195 0.211 INCHES MIN MAX 0.0768 0.0807 0.0768 0.0807 0.0197 0.0236 0.0118 0.0157 0.0079 0.0118 0.0256 BSC 0.0295 0.0335 0.0276 0.0315 0.0020 0.0077 0.0083 Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 6/7 Version: B11 TSM301K12 20V P-Channel MOSFET with Schottky Diode Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7/7 Version: B11