TSM3442CX6

TSM3442 20V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 3.6A = 60mΩ RDS (on), Vgs @ 2.5V, Ids @ 3.1A = 90mΩ Features Advanced trench process technology High density cell design for ultra low on-resistance N-Channel 2.5V (G-S) MOSFET Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. TSM3442CX6 Packing Tape & Reel 3000pcs / Per Reel Package SOT-26 Absolute Maximum Rating (Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation unless otherwise noted) Symbol VDS VGS ID IDM Ta = 25 oC Ta = 75 oC PD Limit 20V ±8 3.6 10 1.5 1.0 Unit V V A A W Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG +150 - 55 to +150 o o C C Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t