TSM7N60CIC0

Preliminary TSM7N60 600V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 600 RDS(on)(Ω) 1.2 @ VGS =10V ID (A) 3.5 General Description The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Features ● ● ● ● Low RDS(ON) 1.2Ω (Max.) Low gate charge typical @ 28nC (Typ.) Low Crss typical @ 12pF (Typ.) Fast Switching Block Diagram Ordering Information Part No. TSM7N60CZ C0 TSM7N60CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current * Avalanche Current (Single) (Note 2) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 1) Repetitive Avalanche Energy (Note 1) Maximum Power Dissipation @Ta = 25 C Operating Junction Temperature Storage Temperature Range * Limited by maximum junction temperature o Symbol VDS VGS Ta = 25ºC Ta = 100ºC ID IDM IAS EAS IAR EAR PD TJ TSTG Limit 600 ±30 7 3.2 28 7 230 7 7.5 65 150 -55 to +150 Unit V V A A A A mJ A mJ W ºC o C 1/7 Version: Preliminary Preliminary TSM7N60 600V N-Channel Power MOSFET Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Symbol RӨJC RӨJA Limit 1.92 83.3 Unit o o C/W C/W Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transfer Conductance Diode Forward Voltage Dynamic b Conditions VGS = 0V, ID = 250uA VGS = 10V, ID = 3.5A VDS = VGS, ID = 250uA VDS = 600V, VGS = 0V VGS = ±30V, VDS = 0V VDS = 10V, ID = 3.5A IS = 7A, VGS = 0V Symbol BVDSS RDS(ON) VGS(TH) IDSS IGSS gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) Min 600 -2.0 ----------------- Typ -1.0 ---7.3 -28 5.5 11 950 85 12 16 60 80 65 365 4.23 Max -1.2 4.0 1 ±100 -1.4 42 8.3 17 1430 130 18 ------- Unit V Ω V uA nA S V Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c VDS = 300V, ID = 7A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time VGS = 0V, IS = 7A, VGS = 10V, ID = 7A, VDD = 300V, RG = 25Ω tr td(off) tf t fr nS nS uC dIF/dt = 100A/us Reverse Recovery Charge Q fr Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. VDD = 50V, IAS=7A, L=9.8mH, RG=27Ω 3. Pulse test: pulse width ≤300uS, duty cycle ≤2% 4. Essentially Independent of Operating Temperature 2/7 Version: Preliminary Preliminary TSM7N60 600V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/7 Version: Preliminary Preliminary TSM7N60 600V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/7 Version: Preliminary Preliminary TSM7N60 600V N-Channel Power MOSFET ITO-220 Mechanical Drawing DIM A B C D E F G H I J K L M N O ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.04 10.07 0.395 0.396 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) 1.40 (typ.) 0.055 (typ.) 15.0 15.20 0.591 0.598 0.52 0.54 0.020 0.021 2.35 2.73 0.093 0.107 13.50 13.55 0.531 0.533 1.11 1.49 0.044 0.058 2.60 2.80 0.102 0.110 4.49 4.50 0.176 0.177 1.15 (typ.) 0.045 (typ.) 3.03 3.05 0.119 0.120 2.60 2.80 0.102 0.110 6.55 6.65 0.258 0.262 5/7 Version: Preliminary Preliminary TSM7N60 600V N-Channel Power MOSFET TO-220 Mechanical Drawing DIM A B C D E F G H J K L M N O P TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270 6/7 Version: Preliminary Preliminary TSM7N60 600V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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