TSM802CQRVG

TSM802 20V N-Channel MOSFET w/ESD Protected TDFN 3x3 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain PRODUCT SUMMARY VDS (V) 20 RDS(on)(mΩ) 25 @ VGS = 4.5V 30 @ VGS = 2.5V 65 @ VGS = 1.8V ID (A) 5 4 2 Features ● ● ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Low Profile 0.75mm (typ.) ESD Protect 2KV Block Diagram Application ● ● Specially Designed for Li-on Battery Packs Battery Switch Application Ordering Information Part No. Package Packing 3Kpcs / 7” Reel 3Kpcs / 7” Reel 10Kpcs / 13” Reel 10Kpcs / 13” Reel N-Channel MOSFET TSM802CQ RV TDFN 3x3 TSM802CQ RVG TDFN 3x3 TSM802CQ RK TDFN 3x3 TSM802CQ RKG TDFN 3x3 Note: “G” denotes for Halogen Free Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a,b Continuous Source Current (Diode Conduction) Maximum Power Dissipation Ta = 25 C o Ta = 75 C o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Limit 20 ±12 6 30 1.4 3 .1 1.6 +150 -55 to +150 Unit V V A A A W o o Operating Junction Temperature Operating Junction and Storage Temperature Range C C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on 1”x1” FR4 Board, t ≤ 10 sec. c. Pulse limited