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UF1D

UF1D

  • 厂商:

    TSC

  • 封装:

  • 描述:

    UF1D - 1.0 AMP. Glass Passivated High Efficient Rectifiers - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
UF1D 数据手册
UF1A - UF1M 1.0 AMP. Glass Passivated High Efficient Rectifiers DO-41 / DO-204AL Features P lastic package has Underwriters Laboratory Flammability Classification 94V0 Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes G lass passivated chip junction E xcellent high temperature switching U ltrafast recovery time for high efficiency S oft recovery characteristics H igh temperature soldering guaranteed: 260 oC/10 seconds/.375”,(9.5mm) lead lengths at 5 lbs., (2.3kg) tension M echanical Data C ase: JEDEC DO-204AL molded plastic body over passivated chip T erminals: Pure tin plated, lead free, solderable per MIL-STD-750, Method 2026 P olarity: Color band denotes cathode M ounting Position: Any W eight: 0.012 ounce, 0.34 gram Dimensions in inches and (millimeters) R ating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% M aximum Ratings and Electrical Characteristics T ype Number M aximum Recurrent Peak Reverse Voltage M aximum RMS Voltage M aximum DC Blocking Voltage M aximum Average Forward Rectified Current .375 (9.5mm) Lead Length @T A = 5 5 oC P eak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) M aximum Instantaneous Forward Voltage @ 1.0A M aximum DC Reverse Current @ T A =25 o C at Rated DC Blocking Voltage @ T A =125 oC Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Typical Thermal Resistance (Note 3) S ymbol UF1A UF1B UF1D UF1G UF1J UF1K UF1M Units V V V A A V RRM V RMS V DC I(AV) IFSM VF IR T rr Cj R θJA R θJL 50 35 50 100 70 100 200 140 200 400 280 400 1 .0 30 600 420 600 800 560 800 1000 700 1000 1 .0 5 .0 150 50 17 60 15 -55 to + 150 1.7 V uA uA nS pF o 75 C/W o Operating/Storage Temperature Range T J, T STG C 1. Reverse Recovery Test Conditions: IF =0.5A, IR =1.0A, IRR =0.25A N otes: 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 3. Thermal Resistance from junction to ambient and from Junction to Lead length .375” (9.5mm), Mounted on 0.2” x 0.2” (5mm x 5mm) Cu pads. Version: A06 RATINGS AND CHARACTERISTIC CURVES (UF1A THRU UF1M) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT. (A) 1.0 RESISTIVE OR INDUCTIVE LOAD 0.375"(9.5mm) LEAD LENGTH FIG.2- TYPICAL FORWARD CHARACTERISTICS 5 UF1J-UF1M INSTANTANEOUS FORWARD CURRENT. (A) 1 0.5 Tj=25 C PULSE WIDTH=300 s 1% DUTY CYCLE o 0.1 UF1J-UF1M 0 10 20 40 60 80 100 o 120 140 160 LEAD TEMPERATURE. ( C) 0.01 FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 30 PEAK FORWARD SURGE CURRENT. (A) 25 TJ = 55 0C 8.3ms Single Half Sine Wave JEDEC Method 0.001 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE. (V) 20 15 10 FIG.5- TYPICAL REVERSE CHARACTERISTICS 200 TJ=125 0C 5 100 0 1 10 NUMBER OF CYCLES AT 60Hz 100 INSTANTANEOUS REVERSE CURRENT. (mA) TJ=100 C 10 TJ=125 C TJ=100OC 1 TJ=25 C O O O 100 FIG.4- TYPICAL JUNCTION CAPACITANCE UF 1J- JUNCTION CAPACITANCE.(pF) UF UF1 1M A-U F1G 10 0.1 Tj=25 0C f=1.0MHz Vsig=50mVp-p UF1A-UF1G UF1J-UF1M 100 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 1 0.1 1 REVERSE VOLTAGE. (V) 10 FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06

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