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US1M

US1M

  • 厂商:

    TSC

  • 封装:

  • 描述:

    US1M - 1.0AMP. High Efficient Surface Mount Rectifiers - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
US1M 数据手册
creat by ART US1A - US1M 1.0AMP. High Efficient Surface Mount Rectifiers SMA/DO-214AC Pb RoHS COMPLIANCE Features UL Recognized File # E-326243 Glass passivated chip junction For surface mounted application Low profile package Built-in strain relief Ideal for automated placement Easy pick and place Ultrafast recovery time for high efficiency Low forward voltage, low power loss High temperature soldering guaranteed: 260 ℃/10 seconds on terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Case: Molded plastic Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Indicated by cathode band Weight: 0.064 grams Dimensions in inches and (millimeters) Marking Diagram US1X G Y WW = Specific Device Code = Green Compound = Year = Work Week Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .375 (9.5mm) Lead Length @ T L=110℃ Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) @ 1.0A Maximum Reverse Current @ Rated VR T A=25 ℃ T A=125 ℃ Symbol US1A US1B US1D US1G US1J US1K US1M VRRM VRMS VDC IF(AV) IFSM VF IR Trr Cj Unit V V V A A 50 35 50 100 70 100 200 140 200 400 280 400 1.0 30 600 420 600 800 560 800 1000 700 1000 1.0 5 150 50 15 75 27 - 55 to + 150 - 55 to + 150 1.7 V uA Maximum Reverse Recovery Time (Note 2) Typical Junction Capacitance (Note 3) Typical Thermal Resistance (Note 4) Operating Temperature Range Storage Temperature Range Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle 75 10 O nS pF C/W O O RθjA RθjL TJ TSTG C C Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Note 4: P.C.B Mounted on 0.2" x 0.2" (5mm x 5mm) Copper Pad Area Version:F11 RATINGS AND CHARACTERISTIC CURVES (US1A THRU US1M) FIG.1 MAXIMUM FORWARD CURRENT DERATING CURVE 1.5 50 FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3mS Single Half Sine Wave JEDEC Method AVERAGE FORWARD CURRENT (A) RESISTIVE OR INDUCTIVE 1 PEAK FORWARD SURGE A CURRENT (A) 175 40 30 20 10 0 0.5 0 0 25 50 75 100 o 125 150 1 LEAD TEMPERATURE ( C) 10 NUMBER OF CYCLES AT 60 Hz 100 FIG. 3 TYPICAL FORWARD CHARACTERISRICS 10 FIG. 4 TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT (A) US1A-US1G INSTANTANEOUS REVERSE CURRENT (uA) TA=100℃ 10 1 0.1 US1J-US1M 1 TA=25℃ 0.1 0.01 PULSE WIDTH=300uS 1% DUTY CYCLE 0.001 0.4 0.6 0.8 1 1.2 1.4 FORWARD VOLTAGE (V) 1.6 1.8 0.01 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 5 TYPICAL JUNCTION CAPACITANCE 100 TRANSIENT THERMAL IMPEDANCE A (℃/W) FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE 100 US1A-US1G CAPACITANCE (pF) TA=25℃ f=1.0MHz Vsig=50mVp-p 10 10 US1J-US1M 1 1 0.1 1 10 REVERSE VOLTAGE (V) 100 0.1 0.01 0.1 1 T-PULSE DURATION(s) 10 100 Version:F11

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US1M
  •  国内价格
  • 50+0.0448
  • 200+0.042
  • 600+0.0392
  • 2000+0.0364
  • 5000+0.0336
  • 10000+0.03164

库存:17411

US1M
    •  国内价格
    • 1+0.0975
    • 100+0.091
    • 300+0.0845
    • 500+0.078
    • 2000+0.07475
    • 5000+0.0728

    库存:1122

    US1M
    •  国内价格
    • 1+0.04084
    • 100+0.03825
    • 300+0.03566
    • 500+0.03307
    • 2000+0.03178
    • 5000+0.031

    库存:13

    US1M
    •  国内价格
    • 10+0.0448
    • 50+0.04144
    • 200+0.03864
    • 600+0.03584
    • 1500+0.0336
    • 3000+0.0322

    库存:112