CHA2069

CHA2069 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. 24 22 20 18 16 14 12 10 8 6 4 2 0 14 16 18 20 22 24 26 28 30 32 34 Main Features Broad band performance 18-31GHz 2.5dB noise figure 22dB gain, ± 1dB gain flatness Low DC power consumption, 55mA 20dBm 3rd order intercept point Chip size : 2,170 x 1,270x 0.1mm Frequency ( GHz ) On wafer typical measurements. Main Characteristics Tamb = +25°C Symbol NF G ∆G Parameter Noise figure,18-31GHz Gain Gain flatness 18 Min Typ 2.5 22 ±1 ± 1.5 Max 3.5 Unit dB dB dB ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref. :DSCHA20699273 - 8-Sep-99 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2069 Electrical Characteristics 18-31GHz Low Noise Amplifier Tamb = +25°C, Vd = +4,5V Pads:B=D=E=Gnd Symbol Fop G ∆G NF VSWRin Parameter Operating frequency range Gain (1) Gain flatness (1) Noise figure (1) Input VSWR (1) Min 18 18 22 ±1 2.5 2.0:1 2:0:1 20 10 55 75 ± 1.5 3.5 2.5:1 2.5:1 dBm dBm mA Typ Max 31 Unit Ghz dB dB dB VSWRout Ouput VSWR (1) IP3 P1dB Id 3rd order intercept point Output power at 1dB gain compression Drain bias current (2) (1) These values are representative on-wafer measurements that are made without bonding wires at the RF ports. (2) This current is the typical value from the low noise low consumption biasing ( B & D & E grounded ). Absolute Maximum Ratings (3) Tamb = +25°C Symbol Vd Pin Top Tstg Parameter Drain bias voltage (5) Maximum peak input power overdrive (4) Operating temperature range Storage temperature range Values 5.0 +15 -40 to +85 -55 to +125 Unit V dBm °C °C (3) Operation of this device above anyone of these paramaters may cause permanent damage. (4) Duration < 1s. (5) See chip biasing options pp7 Ref. :DSCHA20699273 - 8-Sep-99 2 /8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 18-31GHz Low Noise Amplifier Typical Result Chip Typical Response ( On wafer Sij ) : Tamb = +25°C VD=4.5V ID =+55 mA CHA2069 F(GHz) 2 4 6 8 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 S11 mod pha dB deg -0.01 -34.9 -0.01 -71.6 -0.15 -112.7 -0.74 -164.6 -3.30 128.2 -5.18 90.4 -6.94 50.5 -7.98 11.7 -8.31 -23.4 -8.58 -54.0 -9.01 -77.8 -9.66 -97.0 -10.27 -112.2 -11.44 -125.0 -12.60 -132.7 -13.74 -137.8 -14.44 -140.0 -15.21 -142.8 -16.15 -144.4 -16.91 -142.9 -17.29 -139.8 -16.84 -139.8 -16.95 -147.5 -20.07 -167.5 -30.52 -155.1 -27.00 -17.8 -14.97 -22.9 -9.33 -43.0 -5.88 -63.5 -3.76 -82.7 -2.43 -100.5 -1.79 -116.2 -1.35 -129.6 -1.14 -140.6 -0.83 -151.3 S12 mod Pha dB Deg -83.58 -127.8 -76.83 108.8 -66.00 60.8 -71.92 -16.4 -70.19 -49.4 -59.14 -73.7 -54.33 -122.3 -51.51 -169.1 -50.07 149.9 -49.42 116.2 -49.02 87.9 -49.24 56.9 -49.74 38.9 -48.80 9.0 -50.27 -20.2 -50.08 -36.8 -50.55 -62.5 -51.54 -81.8 -51.68 -101.2 -53.88 -123.9 -55.05 -131.7 -56.50 -130.9 -54.45 -134.4 -52.53 -163.2 -54.62 -174.1 -53.75 179.4 -53.19 178.6 -51.06 149.6 -52.88 130.3 -49.61 134.9 -47.83 116.4 -52.98 85.7 -46.64 67.5 -59.58 31.3 -54.65 61.1 S21 mod pha dB deg -63.71 -13.4 -58.71 67.0 -23.56 -164.4 1.54 82.3 12.91 -27.1 16.99 -80.0 19.60 -134.0 21.14 175.3 21.66 129.6 22.18 87.5 22.07 51.3 22.35 17.5 22.25 -13.3 22.30 -43.3 22.38 -72.0 22.38 -99.8 22.60 -127.6 22.72 -155.4 22.60 176.7 22.65 148.6 22.52 121.6 22.33 95.0 22.31 68.4 22.38 40.0 22.26 11.1 22.16 -19.5 21.80 -52.8 21.01 -87.4 19.68 -122.9 17.65 -157.6 15.15 170.2 12.27 141.0 9.27 114.2 6.10 90.1 2.95 68.0 S22 mod pha dB deg -1.00 -119.2 -1.47 175.5 -2.32 127.4 -3.60 81.3 -5.05 47.4 -5.37 16.5 -7.20 -11.0 -9.15 -34.1 -11.20 -56.3 -13.60 -77.5 -16.65 -96.6 -21.01 -115.6 -28.25 -138.6 -29.93 70.6 -20.66 26.9 -16.29 8.9 -13.67 -8.6 -12.01 -23.6 -10.83 -36.2 -10.08 -48.8 -9.73 -59.3 -9.58 -69.9 -9.80 -78.4 -10.82 -83.0 -11.30 -83.9 -11.94 -81.7 -11.76 -73.8 -10.65 -68.9 -9.14 -68.4 -7.96 -71.3 -6.97 -75.0 -6.11 -79.3 -5.37 -83.2 -4.70 -87.6 -4.13 -92.4 Ref. :DSCHA20699273 - 8-Sep-99 3 /8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2069 Typical Results Chip Typical Response ( On wafer Sij ) : Tamb = +25°C Vd = 4.5V ; B , D & E=GND; Id = 55mA 30 25 20 15 10 5 0 -5 -10 -15 -20 4 6 8 10 12 14 16 18 20 18-31GHz Low Noise Amplifier 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 22 24 26 28 30 32 34 36 38 40 dBS11 dBS21 dBS22 Nf Frequency ( GHz ) Typical Gain and Matching measurements on wafer. 16 14 12 10 8 6 4 2 0 18 20 22 24 26 28 30 Frequency ( GHz ) Typical Poutput Power -1dB Ref. :DSCHA20699273 - 8-Sep-99 4 /8 measurements on wafer. Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 18-31GHz Low Noise Amplifier Typical Test-Jig Results Circuit Typical Response ( Test-Jig ) : CHA2069 Tamb = +25°C Vd = 4.5V ; B ,D & E =Pads grounded ; Id = 55mA (G1, G2, A, C & F non connected ) These values are representative of the package assembly with input and output bonding wires of typically 0.15nH. 30 25 20 15 10 5 0 -5 -10 -15 -20 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Gain S11 S22 Frequency ( GHz ) Typical Linear measurements in test-jig. 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 18 20 22 24 26 28 30 32 Frequency ( GHz ) Typical NOISE Figure measurements in test-jig. Ref. :DSCHA20699273 - 8-Sep-99 5 /8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2069 18-31GHz Low Noise Amplifier Chip schematic and Pad Identification Pad Size :100/80um, chip thickness 100um Dimensions : 2170 x 1270µm ± 35µm 2170 1575 1325 1075 825 575 325 1270 372 372 720 870 1020 1170 1320 1470 1620 Ref. :DSCHA20699273 - 8-Sep-99 6 /8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 18-31GHz Low Noise Amplifier Typical Chip Assembly CHA2069 Chip Biasing options This chip is self-biased, and flexibility is provided by the access to number of pads. the internal DC electrical schematic is given in order to use these pads in a safe way. The two requirements are : N°1 : Not exceed Vds = 3.5Volt ( internal Drain to Source voltage ). N°2 : Not biased in such a way that Vgs becomes positive. ( internal Gate to Source voltage ) We propose two standard biasing : Low Noise and low consumption : Vd = 4.5V and B, D, E grounded. All the other pads non connected ( NC ). Idd = 55mA & Pout-1dB = 10dBm Typical. ( Equivalent to A,B,C,D,E F: non connected and Vd=4.5V ; G1=G2=G3=+1.V ). Low Noise and higher output power Vd = 4.5V and B, C, F grounded. All the other pads non connected ( NC ). Idd = 75mA & Pout-1dB = 12dBm Typical.. Ref. :DSCHA20699273 - 8-Sep-99 7 /8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2069 18-31GHz Low Noise Amplifier Ordering Information Chip form : CHA2069-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. :DSCHA20699273 - 8-Sep-99 8 /8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09