CHA3063

CHA3063 RoHS COMPLIANT 5.5-23GHz Driver Amplifier GaAs Monolithic Microwave IC Description The CHA3063 is a two-stage general purpose monolithic medium power amplifier.The backside of the chip is both RF and DC grounded.This helps to simplify the assembly process. The circuit is manufactured with a pHemt process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Feature 24 20 Gain Rlosses & NF ( dB ) dBS21 Broadband performance 5.5-23GHz 21dBm output power (Psat) 19dB gain, ± 1dB gain flatness Typical PAE:11%@P-1dB Chip size : 1.33 x 0.910x 0.1mm 16 12 8 NF 4 0 -4 -8 dBS11 dBS22 -12 -16 -20 -24 2 4 6 8 10 12 14 16 18 20 22 24 Frequency ( GHz ) Typical On wafer measurements Main Characteristics Tamb = +25° C Symbol Fop G Pout Parameter Operating frequency range Small signal gain Output power, Pin=0dBm Min 5.5 18 +18 19 +20 160 210 Typ Max 23 Unit GHz dB dBm mA Id_small_signal Bias current ESD Protection : Electrostatic discharge sensitive device observe handling precautions ! Ref : DSCHA3063-8144 - 23 May 08 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3063 Electrical Characteristics on wafer 5.5-23GHz Driver Amplifier Tamb = +25° Vd1=Vd2=4V Vg tuned for Id=160mA (around –0.27V) C, Symbol Fop G Parameter Operating frequency range Small signal gain (5.5-6GHz) Small signal gain (6-23GHz) Min 5.5 17 18 Typ Max 23 Unit GHz dB 19 ±1.0 35 dB dB dB dBm dBm dBm -7 -7 6 210 dB dB dB mA ∆G Is P1dB Pout OIP3 RL_IN RL_OUT NF Small signal gain flatness Reverse isolation CW output power at 1dB compression (1) Output Power (Pin=0dBm) Output 3rd order intercept point (2) Input Return Loss (3) Output Return Loss (3) Noise figure +16 +18 +18 +20 28 -15 -15 4.5 160 Id_small signal Bias current (1) These values are representative for CW on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement (3) RL_IN, RL_OUT < 6dB from 5.5GHz to 7GHz Absolute Maximum Ratings (1) Tamb. = 25° C Symbol Vds Ids Vg Ig Vgd Pin Ta Tstg Parameter Drain bias voltage_small signal Drain bias current_small signal Gate bias voltage Gate bias current Maximum negative gate drain Voltage (Vg-Vd) Maximum continuous input power Maximum peak input power overdrive (2) Operating temperature range Storage temperature range Values 5.0 210 -2 to +0.4 0.7 -5 +1 +15 -40 to +85 -55 to +125 Unit V mA V mA V dBm dBm ° C ° C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref : DSCHA3063-8144 - 23 May 08 2/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 5.5-23GHz Driver Amplifier Bias Conditions : Vd1,2= 4V, Vg = -0.27V, Id = 160 mA, Ta=+25° C. CHA3063 Typical Scattering Parameters ( On wafer Sij measurements) FREQ GHz 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0 11,0 12,0 13,0 14,0 15,0 16,0 17,0 18,0 19,0 20,0 21,0 22,0 23,0 24,0 25,0 26,0 27,0 28,0 29,0 30,0 S11 dB -0,3 -0,7 -3,4 -5,7 -7,9 -9,0 -11,3 -13,5 -14,3 -14,0 -13,2 -13,2 -15,3 -16,7 -21,2 -18,6 -19,8 -18,8 -20,8 -19,8 -15,4 -14,2 -11,5 -11,6 -3,9 -2,0 -1,3 -1,3 -1,3 -1,2 S11 /° -35,6 -75,6 -113,7 -140,7 -170,3 162,5 121,8 82,5 39,7 0,9 -34,0 -62,6 -95,8 -125,2 -125,5 -140,0 -124,7 -172,0 101,6 23,1 -14,7 -34,2 -43,5 -30,9 -46,7 -74,8 -99,2 -115,8 -128,4 -140,1 S12 dB -60,9 -63,1 -54,5 -53,1 -43,5 -44,2 -41,0 -38,7 -37,6 -37,1 -36,7 -35,6 -36,0 -35,0 -34,7 -36,4 -36,4 -38,5 -37,4 -35,2 -34,0 -33,8 -35,3 -33,1 -34,9 -35,3 -39,7 -33,9 -32,3 -28,7 S12 /° 84,0 142,8 -53,2 138,2 67,4 34,7 13,6 -16,7 -39,6 -61,4 -82,9 -107,7 -126,6 -148,4 -175,9 170,4 137,3 135,9 154,6 125,8 101,5 71,7 46,5 -0,4 -86,0 -172,0 157,6 138,6 128,4 96,4 S21 dB -12,7 -13,7 11,6 15,2 16,4 18,8 19,3 18,9 19,1 19,3 19,5 19,6 19,5 19,2 18,5 18,2 18,1 18,1 18,0 18,0 18,2 18,9 19,5 20,4 17,6 10,9 3,9 -3,5 -12,1 -21,0 S21 /° 86,9 -179,2 123,1 58,5 19,0 -12,3 -46,9 -75,2 -100,4 -125,2 -150,7 -175,1 159,3 133,1 111,1 89,1 70,4 44,3 22,0 -2,5 -26,4 -57,7 -89,3 -144,0 153,9 104,5 69,9 44,6 29,3 47,7 S22 dB -0,6 -1,4 -4,7 -6,2 -7,4 -11,1 -12,0 -11,6 -12,9 -14,4 -13,7 -13,5 -11,9 -11,9 -13,1 -14,7 -19,5 -17,4 -18,5 -19,4 -23,3 -21,4 -16,9 -6,3 -3,1 -3,2 -4,3 -4,7 -5,0 -5,9 S22 /° -35,0 -67,7 -93,2 -111,6 -133,3 -149,1 -155,1 -173,2 171,7 165,8 164,9 148,9 131,3 116,0 95,0 79,9 72,4 72,2 57,4 47,4 32,5 76,8 77,6 46,6 -13,3 -59,0 -90,9 -113,7 -133,9 -153,6 Ref : DSCHA3063-8144 - 23 May 08 3/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3063 5.5-23GHz Driver Amplifier Typical ON JIG Measurements (deembedded) Bias Conditions : Vd1,2= 4V, Vg = -0.27V, Id = 160 mA, Ta=+25° C GAIN & ReturnLosses MEASUREMENTS IN TEST JIG 25 S21 19 13 Gain/ReturnLosses (dB) 7 1 -5 S22 -11 -17 S11 -23 -29 -35 1 3 5 7 9 11 13 15 17 19 21 23 25 27 Frequency (GHz) POWER MEASUREMENTS IN TEST JIG (deembedded) 30 25 25 Output Power (dBm) / PAE (%) Psat (Glin-3dB) Linear Gain 20 20 P-1dB 15 15 PAE @ 1 db compression 10 10 5 5 0 0 4 6 8 10 12 14 16 Frequency (GHz) 18 20 22 24 -5 Ref : DSCHA3063-8144 - 23 May 08 4/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Gain (dB) 5.5-23GHz Driver Amplifier Typical ON JIG Power Measurements (deembedded) Bias Conditions : Vd1,2= 4V, Vg = -0.27V, Id = 160 mA, Ta=+25° C Frequency : 6 GHz 25 CHA3063 500 450 Pout (dBm) / Gain (dB) / PAE (%) 20 Gain 400 350 300 250 15 10 Pout 200 Id 150 100 PAE 5 50 0 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 Input Power (dBm) 0 Frequency : 20GHz 25 500 450 Pout (dBm) / Gain (dB) / PAE (%) 20 400 350 Gain 15 300 250 Id (mA) 10 Pout 200 150 Id 5 100 50 PAE 0 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 Input Power (dBm) Ref : DSCHA3063-8144 - 23 May 08 5/8 0 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Id (mA) CHA3063 5.5-23GHz Driver Amplifier Vd=4V Id=160mA @ 23GHz ∆ f=10MHz 35 30 25 20 15 Output power (dBm) 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -16 -14 -12 -10 -8 -6 -4 -2 0 2 Input power (dBm) H3 H1 OIP3 # 28.5dBm 75 65 Fundamental 3rd order IM3 55 45 35 25 15 5 4 6 8 10 12 14 IM3 (dBm) 85° C 25° C -40° C F2 + ( F2-F1 ) Df=10MHz F2 Df=10MHz IM3 Typical ON JIG Noise Figure Measurements Noise Figure versus Temperature 6,5 6 5,5 5 4,5 4 3,5 3 2,5 2 5 7 9 11 13 15 17 19 21 23 Frequency (GHz) Ref : DSCHA3063-8144 - 23 May 08 6/8 Specifications subject to change without notice Noise Figure (dB) Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 5.5-23GHz Driver Amplifier Chip Assembly and Mechanical Data To Vd1,2 drain supply feed CHA3063 To Vg gate supply feed Note :Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Chip Mechanical Data and Pin references. ( Chip thickness : 100µm. All dimensions are in micrometers) Ref : DSCHA3063-8144 - 23 May 08 7/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3063 5.5-23GHz Driver Amplifier Ordering Information Chip form : CHA3063-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref : DSCHA3063-8144 - 23 May 08 8/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09