CHA3513

CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through (SPST) switch. It is designed for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. 0dB state 10A 5A 10A1 BCF G RF RF IN 10dB 5dB 10dB OUT 10B 5B 10B1 ADE H Typical on wafer Measurements Gain versus attenuation states Main Features 5dB state ■ Performances: 6-18GHz ■ 20dBm saturated output power ■ 19 dB gain ■ 3 bit attenuator for 26dB range ■ DC power consumption, 300mA @ 4.5V ■ Chip size: 6.68 x 2.46 x 0.1 mm 10dB state Main Characteristics Tamb. = 25° C Symbol Fop G Psat ATT dyn Parameter Operating frequency range Small signal gain @ Attenuator state 0dB Saturated Output power @ Attenuator state 0dB Attenuator range with 3bit Min 6 Typ 19 20 25 Max 18 Unit GHz dB dBm dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA3513-8144 - 23 May 08 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3513 6-18GHz Digital Variable Amplifier Electrical Characteristics on wafer Tamb = +25° C Vd = Pads B, D, F = 4.5V, Vg = Pads A, C, E tuned for Id = 300mA Symbol Fop G Parameter Operating frequency range (1) Small signal gain @ Attenuator state 0dB (1) 6-17GHz 17-18GHz Min 6 Typ Max 18 Unit GHz 17 15 4.5 9.5 9.5 19 16 5 10 10 25 -35 6.5 12 12 dB dB dB dB dB dB dB ATT bit Attenuator bit: State 5dB State 10 dB 1 State 10dB 2 ATT dyn Is Attenuator range with 3bit Small signal gain @ Attenuator state 0dB & switch OFF (1) Output power at 1dB compression @ Attenuator state 0dB (1) Saturated Output power @ Attenuator state 0dB (1) Noise figure @ Attenuator state 0dB Input Return Loss all attenuator states Output Return Loss all attenuator states & switch ON Drain bias DC voltage (Pads B, D, F) Bias current @ small signal Control voltage for Attenuator bits & SPST switch -5 P1dB 18 dBm Psat 20 dBm NF RL_IN RL_OUT 12 -15 -15 -9 -9 dB dB dB Vd Id Vc 4.5 300 350 0 V mA V (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. Ref. : DSCHA3513-8144 - 23 May 08 2/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 6-18GHz Digital Variable Amplifier CHA3513 Absolute Maximum Ratings Tamb. = 25° (1) C Symbol Vd Id Vg Vc Pin Tch Ta Tstg Parameter Maximum Drain bias voltage ( Pads B,D,F) Drain bias current with Vd=4.5V Gate bias voltage (Pads A,C,E) Attenuator bits & SPST control voltage Maximum input power overdrive (2) Maximum channel temperature Operating temperature range Storage temperature range Values +5 450 -2 to +0.4 -7 to +0.6 +20.0 +175 -40 to +70 -55 to +125 Unit V mA V V dBm ° C ° C ° C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. 3bit VGA Control interface The attenuator states are controlled by 6 voltages. The SPST switch is controlled by 2 voltages. state 0 1 2 3 4 6 7 8 Theoretical attenuation dB 0 référence 5 10 config.1 15 config.1 15 config.2 10 config.2 25 Isolation Voltage CONTROL PAD 10A (V) 10B (V) 5A (V) 5B (V) 10A1 (V) 10B1 (V) Switch control G H -5 -5 0 0 -5 -5 0 -5 0 0 -5 -5 0 0 -5 0 -5 0 -5 0 0 -5 0 -5 0 -5 0 -5 -5 0 -5 0 -5 -5 -5 -5 0 0 0 -5 0 0 0 0 -5 -5 -5 0 -5 -5 -5 -5 -5 -5 -5 0 0 0 0 0 0 0 0 -5 Ref. : DSCHA3513-8144 - 23 May 08 3/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3513 6-18GHz Digital Variable Amplifier Typical on wafer Measurements @ 25° C Bias conditions: Vd = 4.5V, Vg tuned for Id = 300mA 0dB state 5dB state 10dB states Linear Gain versus attenuator states Linear Gain with SPST switch OFF Ref. : DSCHA3513-8144 - 23 May 08 4/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 6-18GHz Digital Variable Amplifier CHA3513 Saturated output power @ nominal state dB(S11) versus frequency for all state Attenuator value versus frequency for all states Switch OFF dB(S22) versus frequency for all states Attenuator phase variation versus frequency for all states 5/10 Specifications subject to change without notice Ref. : DSCHA3513-8144 - 23 May 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3513 6-18GHz Digital Variable Amplifier Typical test fixture Measurements @ 25° C Bias conditions: Vd = 4.5V, Vg tuned for Id = 300mA Linear Gain versus attenuation states 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Gain dB Switch OFF Frequency GHz Input Return Loss versus attenuation states 0 -5 -10 Input return loss (dB) -15 -20 -25 -30 -35 -40 -45 -50 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Frequency GHz Ref. : DSCHA3513-8144 - 23 May 08 6/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 6-18GHz Digital Variable Amplifier CHA3513 Output Return Loss versus attenuation states 0 -5 Switch OFF -10 Output return loss( dB) -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Frequency GHz Ref. : DSCHA3513-8144 - 23 May 08 7/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3513 6-18GHz Digital Variable Amplifier Chip Assembly and Mechanical Data To Vd DC Drain Supply 100nF 120pF 10nF 120pF 10A1 B C F 10A 5A H 10B 5B 10B1 A D 120pF E G Note: Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered. Recommended circuit bonding table Label 10A, 10B 5A, 5B 10A1, 10B1 B D F A C E H G Type Vc Vc Vc Vd Vd Vd Vg Vg Vg Vc Vc Decoupling Not required Not required Not required 120pF / 10nF 120pF / 10nF 120pF / 10nF Not required Not required Not required Not required Not required Comment First 10dB pad control 5dB pad control Second 10dB pad control Drain Supply Drain Supply Drain Supply Gate Supply Gate Supply Gate Supply Switch control Switch control Ref. : DSCHA3513-8144 - 23 May 08 8/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 6-18GHz Digital Variable Amplifier Bonding pad positions CHA3513 (Chip thickness: 100µm) Ref. : DSCHA3513-8144 - 23 May 08 9/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3513 6-18GHz Digital Variable Amplifier Ordering Information Chip form : CHA3513-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA3513-8144 - 23 May 08 10/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09