CHA3666

CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. VD1 VD1 VD2 RFin RFout UMS P1 P2 N2 Main Features ■ Broadband performance 6-17GHz ■ 1.8dB noise figure ■ 26dBm 3rd order intercept point ■ 17dBm power at 1dB compression ■ 21dB gain ■ Low DC power consumption 24,0 22,0 20,0 18,0 16,0 14,0 12,0 10,0 8,0 6,0 4,0 2,0 0,0 4,00 6,00 8,00 10,00 12,00 14,00 16,00 18,00 Gain NF Main Characteristics Temp = +25° Vd1=Vd2= +4V Pads: P1, N2=GND C, Symbol NF G IP3 Noise figure Gain 3rd order intercept point 19 Parameter Min Typ 1.8 21 26 Max 2 Unit dB dB dBm ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Ref. : DSCHA3666-8108 - 17 Apr 08 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3666 Electrical Characteristics Temp = +25° Pads: P1, N2 = GND (1) C, Symbol Fop G ∆G NF IS11I IS22I IP3 P1dB Vd Id Parameter Operating frequency range Gain (2) Gain flatness Noise figure (2) Input return loss (2) Ouput return loss (2) 3rd order intercept point (2) 6-17GHz Low Noise Amplifier Min 6 19 Typ 21 ±0.5 1.8 2.5:1 2.0:1 26 Max 17 Unit GHz dB dB 2 2.7:1 2.2:1 dB dB dB dBm dBm V Output power at 1dB gain comp.(2) (3) Drain bias voltage Drain bias current 15 17 4 60 80 100 mA (1) The other pads are not connected (2) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. (3) P1dB can be increased (+0.5dBm) when P1 & P2 are connected and N2 nonconnected. In this case Id is typically 85mA Absolute Maximum Ratings (1) Temp = +25° C Symbol Vd Pin Top Tj Parameter Drain bias voltage RF input power Operating temperature range (chip backside) Junction temperature Storage temperature range Values 4.5 10 -40 to +85 175 Unit V dBm ° C ° C Tstg -55 to +125 ° C (1) Operation of this device above anyone of these paramaters may cause permanent damage. Ref. : DSCHA3666-8108 - 17 Apr 08 2/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 6-17GHz Low Noise Amplifier Bias Conditions : Vd1=Vd2= +4V Pads: P1, N2 = GND. CHA3666 Typical Scattering Parameters (On wafer Sij measurements) Freq GHZ 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0 18,5 19,0 19,5 20,0 dBS11 dB -0,12 -0,15 -0,21 -0,31 -0,53 -0,99 -2,07 -4,44 -8,15 -9,23 -9,21 -9,07 -8,93 -8,37 -7,99 -7,87 -7,75 -7,54 -7,50 -7,55 -7,77 -8,11 -8,53 -8,98 -9,62 -10,22 -10,60 -11,07 -11,34 -11,28 -11,14 -11,46 -10,91 -10,01 -9,02 -8,00 -7,75 -7,02 -6,59 -6,38 PhS11 ° -12,41 -25,18 -38,83 -54,17 -72,61 -96,30 -129,20 179,00 104,20 35,18 -2,42 -20,75 -30,17 -38,97 -47,52 -56,29 -63,59 -71,38 -79,76 -88,86 -97,01 -105,90 -114,50 -122,60 -130,10 -135,40 -143,40 -153,70 -160,80 -175,20 164,00 146,10 125,00 100,10 72,69 45,92 21,28 0,74 -18,52 -35,21 dBS12 dB -58,07 -66,93 -68,19 -70,23 -66,09 -58,45 -57,93 -53,52 -48,40 -45,69 -43,80 -42,66 -40,68 -40,46 -39,16 -38,17 -38,58 -37,51 -37,26 -36,90 -36,76 -36,05 -35,65 -35,55 -35,31 -35,13 -35,13 -34,80 -34,90 -36,47 -36,88 -37,33 -38,29 -38,86 -41,04 -42,41 -45,21 -47,61 -50,99 -45,57 PhS12 ° -75,30 158,40 -42,37 132,40 -174,80 112,50 51,75 -50,92 -119,10 -159,90 169,70 145,70 125,10 107,20 88,92 75,16 62,12 42,64 36,06 26,77 12,22 -1,08 -13,41 -24,05 -35,87 -50,20 -60,43 -76,43 -81,33 -95,20 -112,40 -119,70 -129,70 -155,40 -161,40 -173,60 -161,70 -177,80 -127,80 -104,20 dBS21 dB -55,39 -59,74 -55,53 -28,46 -11,74 1,55 9,78 15,92 19,62 21,13 21,84 22,14 22,22 22,22 22,19 22,23 22,19 22,08 22,03 21,97 21,93 21,90 21,88 21,86 21,82 21,75 21,72 21,74 21,73 21,84 21,64 21,52 21,68 21,60 21,15 20,44 19,26 18,39 17,14 15,75 PhS21 ° 74,95 86,43 -2,66 25,79 2,26 -54,65 -105,90 -157,20 149,90 103,90 65,87 34,89 6,85 -17,33 -39,18 -59,70 -79,40 -97,96 -115,30 -132,00 -148,40 -164,10 -179,90 164,70 149,40 134,30 119,10 104,00 88,96 73,08 55,53 41,16 24,37 5,25 -14,81 -35,47 -51,39 -69,18 -86,07 -101,50 dBS22 dB -0,16 -0,19 -0,26 -0,62 -1,03 -2,92 -5,03 -7,10 -8,51 -9,15 -9,80 -10,53 -10,91 -11,49 -11,76 -12,47 -13,87 -15,57 -17,57 -20,19 -23,18 -25,38 -26,39 -24,69 -22,43 -20,23 -19,67 -19,22 -18,20 -17,69 -18,61 -17,96 -16,63 -14,95 -13,51 -12,40 -13,47 -11,57 -10,58 -9,99 PhS22 ° -11,79 -23,89 -37,09 -51,84 -68,34 -84,65 -92,78 -98,70 -98,52 -100,90 -104,20 -107,90 -113,20 -119,50 -128,70 -141,30 -154,90 -168,10 176,80 157,60 132,40 96,42 54,20 16,73 -8,28 -25,56 -36,11 -45,27 -51,93 -63,45 -77,33 -72,90 -75,48 -83,86 -102,40 -120,70 -130,90 -142,30 -160,60 -176,80 Ref. : DSCHA3666-8108 - 17 Apr 08 3/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3666 Temp = +25° C 6-17GHz Low Noise Amplifier Typical on wafer Measured Performance Vd1=Vd2= +4V - Pads: P1, N2 = GND - Id=80mA Typical Measurements on wafer (without bonding wires at the RF ports) S parameters versus frequency 25 20 15 10 5 Sij (dB) 0 -5 -10 -15 -20 -25 -30 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) S21 S11 S22 NF versus frequency 6 5,5 5 4,5 Noise Figure (dB) 4 3,5 3 2,5 2 1,5 1 0,5 0 4 6 8 10 12 14 16 18 Frequency (GHz) Ref. : DSCHA3666-8108 - 17 Apr 08 4/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 6-17GHz Low Noise Amplifier CHA3666 Output power at 1dB compression gain versus frequency 20 19,5 19 18,5 18 17,5 17 16,5 16 15,5 15 14,5 14 13,5 13 12,5 12 5 * P1=P2=grounded Pout -1dB (dBm) ** P1=N2=grounded • • * typical consumption : 85mA ** typical consumption : 80mA 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) Ref. : DSCHA3666-8108 - 17 Apr 08 5/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3666 6-17GHz Low Noise Amplifier C/I3 versus output power @configuration: P1_P2 grounded 60 50 40 C/I3(dB) 30 20 10 CI3 -6GHZ CI3 -12GHZ CI3 -7GHZ CI3 -14GHZ CI3 -8GHZ CI3 -16GHZ CI3 -9GHZ CI3 -17GHZ CI3 -10GHZ CI3 -18GHZ 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Single Output power(dBm) IP3 versus output power @configuration P1_P2 grounded 30 28 26 24 Output IP3 (dBm) 22 20 18 16 IP3_6GHz 14 12 10 1 2 3 4 5 6 7 8 9 10 11 12 13 14 IP3_12GHz IP3_7GHz IP3_14GHz IP3_8GHz IP3_16GHz IP3_9GHz IP3_17GHz IP3_10GHz IP3_18GHz Single output power (dBm) Ref. : DSCHA3666-8108 - 17 Apr 08 6/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 6-17GHz Low Noise Amplifier Chip Assembly and Mechanical Data Vd1, Vd2 DC drain supply feed CHA3666 10nF 120pF 120pF P1 N2 P2 Note: Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended. Bonding pad position DC Pads size: 100/100µm, Chip thickness: 100µm Ref. : DSCHA3666-8108 - 17 Apr 08 7/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3666 Chip Biasing options 6-17GHz Low Noise Amplifier This chip is self-biased, and flexibility is provided by the access to number of pads. The internal DC electrical schematic is given in order to use these pads in a safe way. Vd1 1.5K 3.1K 40 0.3K 0.3K Vd2 2.5 RFin 90 90 20 20 8 RFout P1 Two standard biasing: Low Noise and low consumption: P2 N2 Vd1=Vd2 = 4V and P1, N2 grounded. P2 pads non connected (NC). Idd = 80mA & Pout-1dB = 17dBm Typical. Vd1=Vd2 = 4V and P1, P2 grounded. N2 pads non connected (NC). Idd = 85mA & Pout-1dB = 17.5dBm Typical. Low Noise and higher output power Ordering Information Chip form: CHA3666-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA3666-8108 - 17 Apr 08 8/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09