CHE1270A

CHE1270a RoHS COMPLIANT 12-40GHz Wide Band Detector GaAs Monolithic Microwave IC Description The CHE1270a is a detector that integrates a matched detection diode (Vdet). A reference diode is also available to be used in differential mode (Vref). It is designed for a wide range of applications where an accurate transmitted power control is required, typically commercial communication systems. The circuit is manufactured with a Schottky diode MMIC process, 1µm gate length, via holes through the substrate and air bridges. It is available in chip form. RF IN Matching Vdet DC Vref Transmitted power detection (mV) Main Features Vdetect= Vref-Vdet (mV) 10000 12 GHz 32GHz 1000 17GHz 37GHz 22GHz 40GHz 27GHz ■ Wide frequency range 12-40GHz ■ 30dB dynamic range ■ ESD protected ■ Chip size: 1.41 x 0.89 x 0.1mm ■ BCB layer protection 100 10 1 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 Main Characteristics Tamb = +25° Vdc = +4.5V C, Symbol F Dr RL Parameter Frequency range Dynamic range Return Loss Min 12 Input power (dBm) Typ Max 40 Unit GHz dB dB 30 -10 ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref. : DSCHE1270a8205 - 25 Jun 08 1/6 United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHE1270a Electrical Characteristics (1) Tamb = +25° Vdc = +4.5V C, Symbol F Dr IPd Frequency range Dynamic range (for Input Power detection) Input Power detection Parameter 12-40GHz Detector Min 12 Typ Max 40 Unit GHz dB 30 -15 10 to 2000 -8 -10 4.5 70 15 dBm mV dB dB V µA Vdetect Voltage detection Vref – Vdet from IPd_min to IPd_max RL Return Loss (12 – 14.5GHz) Return Loss (15 – 40GHz) Vdc Idc Bias voltage Bias current (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports but with 27kΩ resistor in parallel on pads Vdet and Vref. Absolute Maximum Ratings (1) Tamb = +25° C Symbol Vdc IPd_max Top Tstg Bias voltage Maximum Input power Operating temperature range Storage temperature range Parameter Values 6 18 -40 to +85 -55 to +125 Unit V dBm ° C ° C (1) Operation of this device above anyone of these paramaters may cause permanent damage. Ref. : DSCHE1270a8205 - 25 Jun 08 2/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 12-40GHz Detector Typical on-wafer measurements results CHE1270a Tamb = +25° Vdc = +4.5V, 27k Ω resistor in parallel on pads Vdet and Vref C, Return Loss versus frequency 0 -2 -4 -6 Return Loss (dB) -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 Freq (GHz) Transmitted power detection versus Input power 10000 12 GHz 32GHz Vdetect= Vref-Vdet (mV) 1000 17GHz 37GHz 22GHz 40GHz 27GHz 100 10 1 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 Input power (dBm) Ref. : DSCHE1270a8205 - 25 Jun 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 3/6 CHE1270a 12-40GHz Detector Transmitted power detection versus frequency @ -15dBm Input power 40 35 30 25 20 15 10 5 0 12 14 Vdetect= Vref-Vdet (mV) 16 18 20 22 24 26 28 30 32 34 36 38 40 Freq (GHz) Transmitted power detection versus frequency @ +15dBm Input power 2000 1900 1800 Vdetect= Vref-Vdet (mV) 1700 1600 1500 1400 1300 1200 1100 1000 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Freq (GHz) Ref. : DSCHE1270a8205 - 25 Jun 08 4/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 12-40GHz Detector Chip Assembly and Mechanical Data CHE1270a DC Pads Size: 100/100 µm, Chip thickness: 100 µm Note: Supply feed might be capacitively bypassed. 25µm diameter gold wire is to be prefered. Ref. : DSCHE1270a8205 - 25 Jun 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 5/6 CHE1270a Notes RF IN 12-40GHz Detector Matching 27kΩ Vdet Vdet DC 27kΩ Vref Recommended external resistors assembly 27kΩ resistors in parallel with Vdet and Vref pads are recommended to provide the best behaviour in the whole operating temperature range. As the voltage detection is the difference between Vref and Vdet, the external resistor value should be identical on these two ports. For information, a variation of 3% leads around 1mV variation of detected voltage. Due to ESD protection circuits on RF input, an external capacitance might be requested to isolate the product from external voltage that could be present on the RF access. ESD protections are also implemented on Vdet and Vref accesses. Due to the BCB coating on the chip, qualification domain implies the chip must be glued. Ordering Information Chip form: CHE1270a-98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S Ref. : DSCHE1270a8205 - 25 Jun 08 6/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09