0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
US3012

US3012

  • 厂商:

    UNISEM

  • 封装:

  • 描述:

    US3012 - 5 BIT PROGRAMMABLE SYNCHRONOUS BUCK CONTROLLER IC - UNISEM

  • 数据手册
  • 价格&库存
US3012 数据手册
US3012/3012A 5 BIT PROGRAMMABLE SYNCHRONOUS BUCK CONTROLLER IC PRELIMINARY DATASHEET FEATURES Dual Layout Compatible with RC5051 Designed to meet Intel specification of VRM8.2 & VRM8.3 for Pentium II™ On board DAC programs the output voltage from 1.3V to 3.5V (US3010) & 1.8V to 3.5V for US3010A Loss less Short Circuit Protection Synchronous operation allows maximum efficiency Patented architecture allows fixed frequency operation as well as 100% duty cycle during dynamic load Soft Start High current totem pole driver for direct driving of the external Power MOSFET Power Good function DESCRIPTION The US3012 family of controller ICs are specifically designed to meet Intel specification for Pentium II™ and Pentium Pro™ microprocessor applications as well as the next generation P6 family processors. These products feature a patented topology that in combination with a few external components as shown in the typical application circuit below ,will provide in excess of 16A of output current for an on- board DC/DC converter while automatically providing the right output voltage via the 5 bit internal DAC .These devices also feature, loss less current sensing by using the Rds-on of the high side Power MOSFET as the sensing resistor, a Power Good window comparator that switches its open collector output low when the output is outside of a ±10% window . Other features of the device are ; Undervoltage lockout for both 5V and 12V supplies as well as an external programmable soft start function as well as programming the oscillator frequency by using an external capacitor. APPLICATIONS Pentium II & Pentium Pro™ processor DC to DC converter application Low cost Pentium with AGP TYPICAL APPLICATION L1 L2 Q1 C5 C1 C3 R3 R5 Q2 R6 R2 R4 C7 C11 R7 R8 R9 5V C4 C6 R10 R1 D1 R11 13 V12 7 NC/Vccp 6 V5 4 CS+ 12 HDrv 5 CS9 LDrv 10 Gnd 14 Vfb/ GndD En 2 R12 R13 12V OutEn Power Good C9 C10 US3012 16 SS/Vref C2 D4 8 D3 17 D2 18 D1 19 D0 20 NC/ GndP 11 NC/ GndA 15 PGd 3 Ct 1 C8 VID4 VID3 VID2 VID1 3012app1-1.1 VID0 Notes: Pentium II and Pentium Pro are trade marks of Intel Corp. PACKAGE ORDER INFORMATION Ta (°C) 0 TO 70 0 TO 70 Rev. 1.0 5/6/98 Device US3012CW US3012ACW Package 20 pin Plastic SOIC WB 20 pin Plastic SOIC WB VID Voltage Range 1.3V to 3.5V 1.8V to 3.5V 4-1 US3012/3012A ABSOLUTE MAXIMUM RATINGS V5 supply Voltage ........................................... 7V V12 Supply Voltage ............................................ 20V Storage Temperature Range ................................. -65 TO 150°C Operating Junction Temperature Range .......... 0 TO 125°C PACKAGE INFORMATION 20 PIN WIDE BODY PLASTIC SOIC (W) TOP VIEW Ct 1 En 2 PGd 3 CS+ 4 CS- 5 V5 6 NC 7 D4 8 LDrv 9 PGnd 10 20 D0 19 D1 18 D2 17 D3 16 SS 15 Gnd 14 Vfb 13 V12 12 HDrv 11 NC θJA =85°C/W Unless otherwise specified ,these specifications apply over ,V12 = 12V, V5 = 5V and Ta=0 to 70°C. Typical values refer to Ta =25°C. Low duty cycle pulse testing are used which keeps junction and case temperatures equal to the ambient temperature. PARAMETER SYM TEST CONDITION VID Section DAC output voltage (note 1) DAC Output Line Regulation DAC Output Temp Variation VID Input LO VID Input HI VID input internal pull-up resistor to V5 Power Good Section Under voltage lower trip point Vout ramping down Under voltage upper trip point Vout ramping up UV Hysterises Over voltage upper trip point Vout ramping up Over voltage lower trip point Vout ramping down OV Hysterises Power Good Output LO RL=3mA Power Good Output HI RL=5K pull up to 5V Soft Start Section Soft Start Current CS+ =0V , CS- =5V MIN 0.99Vs TYP Vs MAX 1.01Vs 0.1 0.5 0.4 2 27 UNITS V % % V V kΩ ELECTRICAL SPECIFICATIONS 0.89Vs .015Vs 1.09Vs .015Vs 4.8 0.90Vs 0.92Vs .02Vs 1.10Vs 1.08Vs .02Vs 0.91Vs .025Vs 1.11Vs .025Vs 0.4 V V V V V V V V uA 10 4-2 Rev. 1.0 5/6/98 US3012/3012A UVLO Section UVLO Threshold-12V UVLO Hysterises-12V UVLO Threshold-5V UVLO Hysterises-5V Error Comparator Section Input bias current Input Offset Voltage Delay to Output Current Limit Section C.S Threshold Set Current C.S Comp Offset Voltage Hiccup Duty Cycle Supply Current Operating Supply Current Supply ramping up Supply ramping up 9.2 0.3 4.1 0.2 10 0.4 4.3 0.3 10.8 0.5 4.5 0.4 2 +2 100 200 240 +5 2 V V V V uA mV nS uA mV % -2 Vdiff=10mV 160 -5 Css=0.1 uF CL=3000pF V5 V12 CL=3000pF CL=3000pF CL=3000pF Ct=150pF 20 14 70 70 200 220 V5 35 2 0.8 100 130 300 250 0.2 mA nS nS nS Khz V V kΩ V V Output Drivers Section Rise Time Fall Time Dead band Time Oscillator Section Osc Frequency Osc Valley Osc Peak Output Enable Section Pull up Resistor to V5 HI Threshold Voltage LO Threshold Voltage 100 190 Note 1: Vs refers to the set point voltage given in Table 1. D4 D3 D2 D1 D0 Vs D4 D3 D2 0 1 1 1 1 1.30* 1 1 1 0 1 1 1 0 1.35* 1 1 1 0 1 1 0 1 1.40* 1 1 1 0 1 1 0 0 1.45* 1 1 1 0 1 0 1 1 1.50* 1 1 0 0 1 0 1 0 1.55* 1 1 0 0 1 0 0 1 1.60* 1 1 0 0 1 0 0 0 1.65* 1 1 0 0 0 1 1 1 1.70* 1 0 1 0 0 1 1 0 1.75* 1 0 1 0 0 1 0 1 1.80 1 0 1 0 0 1 0 0 1.85 1 0 1 0 0 0 1 1 1.90 1 0 0 0 0 0 1 0 1.95 1 0 0 0 0 0 0 1 2.00 1 0 0 0 0 0 0 0 2.05 1 0 0 * Output voltage is disabled for US3012A. ** Output voltage is disabled for all versions. Table 1 - Set point voltage vs. VID codes D1 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 D0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 Vs ** 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 Rev. 1.0 5/6/98 4-3 US3012/3012A PIN DESCRIPTIONS PIN# PIN SYMBOL 20 D0 19 18 17 8 3 D1 D2 D3 D4 PGd Pin Description LSB input to the DAC that programs the output voltage. This pin can be pulled up externally by a 10k resistor to either 3.3V or 5V supply. Input to the DAC that programs the output voltage.This pin can be pulled up externally by a 10kΩ resistor to either 3.3V or 5V supply. Input to the DAC that programs the output voltage.This pin can be pulled up externally by a 10k resistor to either 3.3V or 5V supply. MSB input to the DAC that programs the output voltage.This pin can be pulled up externally by a 10k resistor to either 3.3V or 5V supply. This pin selects a range of output voltages for the DAC. The voltage range for both the "A" and the none "A" versions of the device is given in table 1. This pin is an open collector output that switches LO when the output of the converter is not within ±10% (typ) of the nominal output voltage.When PWRGD pin switches LO the sat voltage is less than 0.4V at 3mA. This pin is connected directly to the output of the Core supply to provide feedback to the Error comparator. This pin is connected to the Drain of the power MOSFET of the Core supply and it provides the positive sensing for the internal current sensing circuitry. An external resistor programs the C.S threshold depending on the Rds of the power MOSFET. An external capacitor is placed in parallel with the programming resistor to provide high frequency noise filtering. This pin is connected to the Source of the power MOSFET for the Core supply and it provides the negative sensing for the internal current sensing circuitry. This pin provides the soft start for the switching regulator. An internal current source charges an external capacitor that is conected from this pin to the GND which ramps up the outputs of the switching regulator, preventing the outputs from overshooting as wellas limiting the input current. The second function of the Soft Start cap is to provide long off time for the synchronous MOSFET or the Catch diode (HICCUP) during current limiting. This pin programs the oscillator frequency in the range of 50 kHZ to 500kHZ with an external capacitor connected from this pin to the GND. This pin serves as the ground pin and must be conected directly to the ground plane. A high frequency capacitor (0.1 to 1 uF) must be connected from V5 and V12 pins to this pin for noise free operation. Output driver for the synchronous power MOSFET. Output driver for the high side power MOSFET. This pin is connected to the 12 V supply and serves as the power Vcc pin for the output drivers.A high frequency capacitor (0.1 to 1 uF) must be connected directly from this pin to GND pin in order to supply the peak current to the power MOSFET during the transitions. 5V supply voltage. This is the output enable pin.This pin is internally pulled high through a resistor to 5V supply. A low signal on this pin disables the output. No connect. 14 4 Vfb CS+ 5 16 CSSS 1 10 Ct Gnd 9 12 13 LDrv HDrv V12 6 2 7,11 15 V5 OUTEN N.C 4-4 Rev. 1.0 5/6/98 US3012/3012A BLOCK DIAGRAM Vfb En V12 UVLO V5 + Vset Enable Vset Enable V12 HDrv PWM Control V12 D0 D1 D2 D3 D4 5Bit DAC, Ctrl Logic Enable Slope Comp LDrv Osc CSOver Current Soft Start & Fault Logic CS+ 200uA Enable Ct SS 1.1Vset PGd Gnd 0.9Vset 3012Ablk1-1.1 PGnd Figure 1 - Simplified block diagram of the US3012/3012A. Rev. 1.0 5/6/98 4-5 US3012/3012A TYPICAL APPLICATION SYNCHRONOUS OPERATION (Dual Layout with RC5051) L1 L2 Q1 C5 R2 R4 C7 C3 R3 R5 Q2 R6 R7 R8 R9 C11 5V C1 C4 C6 R10 R1 D1 R11 14 Vfb/ GndD En 2 R12 R13 12V 13 V12 7 NC/Vccp 6 V5 4 CS+ 12 HDrv 5 CS9 LDrv 10 Gnd OutEn Power Good C9 C10 US3012 16 SS/Vref C2 D4 8 D3 17 D2 18 D1 19 D0 20 NC/ GndP 11 NC/ GndA 15 PGd 3 Ct 1 C8 VID4 VID3 VID2 VID1 VID0 3012app1-1.1 Typical application of US3012/3012A in an on board DC-DC converter providing the Core supply for the Pentium II microprocessor. Table of components that need to be modified to make the dual layout work for US3012A* and RC5051. Part # R1 RC5051 V US3012A* S R2 O V R4 O S R7 V O R8 V S R9 V O R10 O V R11 S O C2 V V C5 O V C8 V V D1 V O S - Short O - Open V - See Unisem or Raytheon parts list for the value. * Table also applies to the none "A" version of the part. Note 1 : R8 can be replaced with shorting wire of #20 AWG or lower. This elliminates the expensive current sense resistor that otherwise is needed with RC5051. 4-6 Rev. 1.0 5/6/98 US3012/3012A US3012/3012A and RC5051 Dual Layout Parts List Ref Desig Q1 Q2 L1 L2 Description MOSFET MOSFET Inductor Inductor Qty 1 1 1 1 Part # IRL3103 IRL3103S (Note 1) IRL3103 IRL3103S (Note 1) L=1 uH Core:T50-18 Turns:14 AWG L=2.5 uH R=2 mohm open 6MV1500GX ,1500uF,6.3V, 6MV1500GX ,1500uF,6.3V, 680uF,10V, EEUFA1A681L 1 uF , SMT 1 uF , SMT 220 pF , SMT 1 uF , SMT 470 pF , SMT 150pF , X7R , SMT 0.01 uF , SMT 0.01 uF , SMT Short, SMT 2.21 kΩ , 1% ,SMT 10Ω , 5%, SMT , 1206 size Short, SMT 10Ω , 5%, SMT , 1206 size 10Ω , 5%, SMT , 1206 size open , SMT short , #20 AWG wire open , SMT 100Ω, 1%, SMT 10 kΩ , 1% ,SMT 100 kΩ , 5%, SMT See Raytheon Parts List , SMT 6270 6270 Manuf IR IR Micro Metal Sanyo Sanyo Panasonic D1 C11 C3 C1 C2 C4 C5 C6 C7 C8 C9 C10 R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 R11 R12 R13 HS1 HS2 Diode Capacitor ,Electrolytic Capacitor ,Electrolytic Capacitor ,Electrolytic Capacitor , Ceramic Capacitor , Ceramic Capacitor , Ceramic Capacitor , Ceramic Capacitor , Ceramic Capacitor , Ceramic Capacitor , Ceramic Capacitor , Ceramic Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Q1 Heatsink Q2 Heatsink 1 5 2 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Thermalloy Thermalloy Note 1 : For the applications where it is desirable not to use the Heatsink, the IRL3103S MOSFET in the TO263 SMT package with 1″ square of pad area using top and bottom layers of the board as a minimum is required. Rev. 1.0 5/6/98 4-7 US3012/3012A Application Information An example of how to calculate the components for the application circuit is given below. Assuming, two sets of output conditions that this regulator must meet, a) Vo=2.8V , Io=14.2A, ∆Vo=185mV, ∆Io=14.2A b) Vo=2V , Io=14.2A, ∆Vo=140mV, ∆Io=14.2A The regulator design will be done such that it meets the worst case requirement of each condition. Output Capacitor Selection The first step is to select the output capacitor. This is done primarily by selecting the maximum ESR value that meets the transient voltage budget of the total ∆Vo specification. Assuming that the regulators DC initial accuracy plus the output ripple is 2% of the output voltage, then the maximum ESR of the output capacitor is calculated as : ESR ≤ 100 = 7 mΩ 14.2 The Sanyo M V G X seres i a good choi t achi is ce o eve bot t prce and per or ance goal The 6M V1500G X h he i fm s. , 1500uF, 6. has an E S R of l 3V ess t han 36 m Ω typ . Selecting 6 of these capacitors in parallel has an ESR of ≈6 mΩ which achieves our low ESR goal. Other type of Electrolytic capacitors from other manufacturers to consider are the Panasonic “FA” series or the Nichicon “PL” series. Reducing the Output Capacitors Using Voltage Level Shifting Technique The trace resistance or an external resistor from the output of the switching regulator to the Slot 1 can be used to the circuit advantage and possibly reduce the number of output capacitors, by level shifting the DC regulation point when transitioninig from light load to full load and vice versa. To accomplish this, the output of the regulator is typically set about half the DC drop that results from light load to full load. For example, if the total resistance from the output capacitors to the Slot 1 and back to the GND pin of the device is 5mΩ and if the total ∆I, the change from light load to full load is 14A, then the output voltage measured at the top of the resistor divider which is also connected to the output capacitors in this case, must be set at half of the 70 mV or 35mV higher than the DAC voltage setting. This intentional voltage level shifting during the load transient eases the requirement for the output capacitor ESR at the cost of load regulation. One can show that the new ESR requirement eases up by half the total trace resistance. For example, if the ESR requirement of the output capacitors without voltage level shifting must be 7mΩ then after level shifting the new ESR will only need to be 8.5mΩ if the trace resistance is 5mΩ (7+5/2=9.5). However, one must be careful that the combined “voltage level shifting” and the transient response is still within the maximum tolerance of the Intel specification. To insure this, the maximum trace resistance must be less than: Rs≤ 2(Vspec - 0.02*Vo - ∆Vo)/∆I Where : Rs=Total maximum trace resistance allowed Vspec=Intel total voltage spec Vo=Output voltage ∆Vo=Output ripple voltage ∆I=load current step For example, assuming: Vspec=±140 mV=±0.1V for 2V output Vo=2V ∆Vo=assume 10mV=0.01V ∆I=14.2A Then the Rs is calculated to be: Rs≤ 2(0.140 - 0.02*2 - 0.01)/14.2=12.6mΩ However, if a resistor of this value is used, the maximum power dissipated in the trace (or if an external resistor is being used) must also be considered. For example if Rs=12.6 m Ω , t he power dissipated is (Io^2)*Rs=(14.2^2)*12.6=2.54W. This is a lot of power to be dissipated in a system. So, if the Rs=5mΩ, then the power dissipated is about 1W which is much more acceptable. If level shifting is not implemented, then the maximum output capacitor ESR was shown previously to be 7mΩ which translated to ≈ 6 of the 1500uF, 6MV1500GX type Sanyo capacitors. With Rs=5mΩ, the maximum ESR becomes 9.5mΩ which is equivalent to ≈ 4 caps. Another important consideration is that if a trace is being used to implement the resistor, the power dissipated by the trace increases the case temperature of the output capacitors which could seriously effect the life time of the output capacitors. Output Inductor Selection The output inductance must be selected such that under low line and the maximum output voltage condition, the inductor current slope times the output capacitor ESR is ramping up faster than the capacitor voltage is 4-8 Rev. 1.0 5/6/98 US3012/3012A drooping during a load current step. However if the inductor is too small , the output ripple current and ripple voltage become too large. One solution to bring the ripple current down is to increase the switching frequency , however that will be at the cost of reduced efficiency and higher system cost. The following set of formulas are derived to achieve the optimum performance without many design iterations. The maximum output inductance is calculated using the following equation : L = ESR * C * ( Vi i - Vom ax )/(2* ∆I ) nm n Where : Vinmin = Minimum input voltage For Vo = 2.8 V , ∆I = 14.2 A L =0.006 * 9000 * ( 4.75 - 2.8) / (2 * 14.2) = 3.7 uH Assuming that the programmed switching frequency is set at 200 KHZ , an inductor is designed using the Micrometals’ powder iron core material. The summary of the design is outlined below : The selected core material is Powder Iron , the selected core is T50-52D from Micro Metal wounded with 8 Turns of # 16 AWG wire, resulting in 3 uH inductance with ≈ 3 mΩ of DC resistance. Assuming L = 3 uH and the switching frequency ; Fsw = 200 KHZ , the inductor ripple current and the output ripple voltage is calculated using the following set of equations : T = 1/Fsw T ≡ Switching Period D ≈ ( Vo + Vsync ) / ( Vin - Vsw + Vsync ) D ≡ Duty Cycle Ton = D * T Vsw ≡ High side Mosfet ON Voltage = Io * Rds Rds ≡ Mosfet On Resistance Toff = T - Ton Vsync ≡ Synchronous MOSFET ON Voltage=Io * Rds ∆Ir = ( Vo + Vsync ) * Toff /L ∆Ir ≡ Inductor Ripple Current ∆Vo = ∆Ir * ESR ∆Vo ≡Output Ripple Voltage In our example for Vo = 2.8V and 14.2 A load , Assuming IRL3103 MOSFET for both switches with maximum on resistance of 19 mΩ, we have : T = 1 / 200000 = 5 uSec Vsw =Vsync= 14.2*0.019=0.27 V D ≈ ( 2.8 + 0.27 ) / ( 5 - 0.27 + 0.27 ) = 0.61 Ton = 0.61 * 5 = 3.1 uSec Toff = 5 - 3.1 = 1.9 uSec ∆Ir = ( 2.8 + 0.27 ) * 1.9 / 3 = 1.94 A ∆Vo = 1.94 * .006 = .011 V = 11 mV Power Component Selection Assuming IRL3103 MOSFETs as power components, we will calculate the maximum power dissipation as follows: For high side switch the maximum power dissipation happens at maximum Vo and maximum duty cycle. Dmax ≈ ( 2.8 + 0.27 ) / ( 4.75 - 0.27 + 0.27 ) = 0.65 Pdh = Dmax * Io^2*Rds(max) Pdh= 0.65*14.2^2*0.029=3.8 W Rds(max)=Maximum Rds-on of the MOSFET at 125°C For synch MOSFET, maximum power dissipation happens at minimum Vo and minimum duty cycle. Dmin ≈ ( 2 + 0.27 ) / ( 5.25 - 0.27 + 0.27 ) = 0.43 Pds = (1-Dmin)*Io^2*Rds(max) Pds=(1 - 0.43) * 14.2^2 * 0.029 = 3.33 W Heatsink Selection Selection of the heat sink is based on the maximum allowable junction temperature of the MOSFETS. Since we previously selected the maximum Rds-on at 125°C, then we must keep the junction below this temperature. Selecting TO220 package gives θjc=1.8°C/W ( From the venders’ datasheet ) and assuming that the selected heatsink is Black Anodized , the Heat sink to Case thermal resistance is ; θcs=0.05°C/W , the maximum heat sink temperature is then calculated as : Ts = Tj - Pd * (θjc + θcs) Ts = 125 - 3.82 * (1.8 + 0.05) = 118 °C With the maximum heat sink temperature calculated in the previous step, the Heat Sink to Air thermal resistance (θsa) is calculated as follows : Assuming Ta=35 °C ∆T = Ts - Ta = 118 - 35 = 83 °C Temperature Rise Above Ambient θsa = ∆T/Pd θsa = 83 / 3.82 = 22 °C/W Next , a heat sink with lower θsa than the one calculated in the previous step must be selected. One way to do this is to simply look at the graphs of the “Heat Sink Temp Rise Above the Ambient” vs. the “Power Dissipation” given in the heatsink manufacturers’ catalog and select a heat sink that results in lower temperature rise than the one calculated in previous step. The following heat sinks from AAVID and Thermaloy meet this criteria. Co. Part # Thermalloy 6078B AAVID 577002 Rev. 1.0 5/6/98 4-9 US3012/3012A Following the same procedure for the Schottcky diode results in a heatsink with θsa = 25 °C/W. Although it is possible to select a slightly smaller heatsink, for simplicity the same heatsink as the one for the high side MOSFET is also selected for the synchronous MOSFET. Switcher Current Limit Protection The PWM controller uses the MOSFET Rds-on as the sensing resistor to sense the MOSFET current and compares to a programmed voltage which is set externally via a resistor (Rcs) placed between the drain of the MOSFET and the “CS+” terminal of the IC as shown in the application circuit. For example, if the desired current limit point is set to be 22A and from our previous sel i t m axi um M O SFET Rdsecton, he m on=19m Ω, then the current sense resistor, Rcs is calculated as : Vcs=IcL*Rds=22*0.019=0.418V Rcs=Vcs/Ib=(0.418V)/(200uA)=2.1kΩ Where: Ib=200uA is the internal current setting of the device Switcher Timing Capacitor Selection The switching frequency can be programmed using an external timing capacitor. The Ct value can be approximated using the equation below: Slot 1 and back to the GND pin of the device is 5mΩ and if the total ∆I, the change from light load to full load is 14A, then the output voltage measured at the top of the resistor divider which is also connected to the output capacitors in this case, must be set at half of the 70 mV or 35mV higher than the DAC voltage setting. To do this, the top resistor of the resistor divider(R10 in the application circuit) is set at 100Ω, and the R11 is calculated. For example, if DAC voltage setting is for 2.8V and the desired output under light load is 2.835V, then R11 is calculated using the following formula : R11= 100*{Vdac /(Vo - 1.004*Vdac)} [Ω] R11= 100*{2.8 /(2.835 - 1.004*2.800)} = 11.76 kΩ Select 11.8 kΩ , 1% Note: The value of the top resistor must not exceed 100Ω . The bottom resistor can then be adjusted to raise the output voltage. Soft Start Capacitor Selection The soft start capacitor must be selected such that during the start up when the output capacitors are charging up, the peak inductor current does not reach the current limit treshold. A minimum of 1uF capacitor insures this for most applications. An internal 10uA current source charges the soft start capacitor which slowly ramps up the inverting input of the PWM comparator Vfb3. This insures the output voltage to ramp at the same rate as the soft start cap thereby limiting the input current. For example, with 1uF and the 10uA internal current source the ramp up rate is (∆V/ ∆t)=I/C = 1V/100mS. Assuming that the output capacitance is 9000uF, the maximum start up current will be: I=9000uF*(1V/100mS)=0.09A Input Filter It is highly recommended to place an inductor between the system 5V supply and the input capacitors of the switching regulator to isolate the 5V supply from the switching noise that occurs during the turn on and off of the switching components. Typically an inductor in the range of 1 to 3 uH will be sufficient in this type of application. Switcher External Shutdown The best way to shutdown the part is to pull down on the soft start pin using an external small signal transistor such as 2N3904 or 2N7002 small signal MOSFET. This allows slow ramp up of the output, the same as the power up. 3.5 × 10 −5 CT Where : CT=Ti min g Capacitor FSW = Switching Frequency FSW ≈ If, FSW=200 kHz : CT ≈ 3.5 × 10 −5 = 175 pF 200 × 10 3 Switcher Output Voltage Adjust As it was discussed earlier,the trace resistance from the output of the switching regulator to the Slot 1 can be used to the circuit advantage and possibly reduce the number of output capacitors, by level shifting the DC regulation point when transitioninig from light load to full load and vice versa. To account for the DC drop, the output of the regulator is typically set about half the DC drop that results from light load to full load. For example, if the total resistance from the output capacitors to the 4-10 Rev. 1.0 5/6/98 US3012/3012A Layout Considerations Switching regulators require careful attention to the layout of the components, specifically power components since they switch large currents. These switching components can create large amount of voltage spikes and high frequency harmonics if some of the critical components are far away from each other and are connected with inductive traces. The following is a guideline of how to place the critical components and the connections between them in order to minimize the above issues. Start the layout by first placing the power components: 1) Place the input capacitors C3 and the high side mosfet ,Q1 as close to each other as possible 2) Place the synchronous mosfet,Q2 and the Q1 as close to each other as possible with the intention that the source of Q1 and drain of the Q2 has the shortest length. 3) Place the snubber R4 & C7 between Q1 & Q2. 4) Place the output inductor ,L2 and the output capacitors ,C10 between the mosfet and the load with output capacitors distributed along the slot 1 and close to it. 5) Place the bypass capacitors, C4 and C6 right next to 12V and 5V pins. C4 next to the 12V, pin 13 and C6 next to the 5V, pin 6. 6) Place the IC such that the pwm output drives, pins 12 and 9 are relatively short distance from gates of Q1 and Q2. 7) If the ouput voltage is to be adjusted, place resistor dividers, R10 & R11 close to the feedback pin. Note 1: Although, the device does not require resistor dividers and the feedback pin can be directly connected to the output, they can be used to set the outputs slightly higher to account for any output drop at the load due to the trace resistance. See the application note. 8) Place timing capacitor C8 close to pin1 and soft start capacitor C2 close to pin 16. Component connections: Note : It is extremely important that no data bus should be passing through the switching regulator section specifically close to the fast transition nodes such as PWM drives or the inductor voltage. Using 4 layer board, dedicate on layer to GND, another layer as the power layer for the 5V, 3.3V and Vcore. Connect all grounds to the ground plane using direct vias to the ground plane. Use large low inductance/low impedance plane to connect the following connections either using component side or the solder side. a) C3 to Q1 Drain b) Q1 Source to Q2 Drain c) Q2 drain to L2 d) L2 to the output capacitors, C10 e) C10 to the slot 1 f) Input filter L1 to the C3 Connect the rest of the components using the shortest connection possible Rev. 1.0 5/6/98 4-11
US3012 价格&库存

很抱歉,暂时无法提供与“US3012”相匹配的价格&库存,您可以联系我们找货

免费人工找货