12N60G-X-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 12N60 12 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored. Power MOSFET FEATURES * RDS(ON) = 0.8Ω @VGS = 10 V * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness Lead-free: 12N60L Halogen-free: 12N60G SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 12N60L-x-TA3-T 12N60G-x-TA3-T 12N60L-x-TF1-T 12N60G-x-TF1-T 12N60L-x-TF3-T 12N60G-x-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-170.E 12N60 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT 12N60-A 600 V Drain-Source Voltage VDSS 12N60-B 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 12 A Continuous ID 12 A Drain Current Pulsed (Note 2) IDM 48 A Single Pulsed (Note 3) EAS 790 mJ Avalanche Energy 24 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 225 °C/W Power Dissipation PD TO-220F/TO-220F1 51 °C/W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 10mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C ISD ≤ 12A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case TO-220 TO-220F/TO-220F1 SYMBOL 12N60-A 12N60-B BVDSS IDSS IGSS SYMBOL θJA θJC RATING 62.5 0.56 2.43 UNIT °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage TEST CONDITIONS VGS = 0 V, ID = 250 µA VDS = 600 V, VGS = 0 V VGS = ±30 V, VDS = 0 V 0.7 2.0 0.55 4.0 0.8 MIN TYP MAX UNIT 600 650 1 ±100 V V µA nA V/°C V Ω pF pF pF ns ns ns ns nC nC nC Drain-Source Leakage Current Gate-Source Leakage Current Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge △BVDSS/△TJ ID = 250 µA, Referenced to 25°C VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD VDS = VGS, ID = 250μA VGS = 10V, ID = 6.0A VDS = 25 V, VGS = 0 V, f = 1MHz 1480 1900 200 270 25 35 30 115 95 85 42 8.6 21 70 240 200 180 54 VDD = 300V, ID = 12A, RG = 25Ω (Note 4, 5) VDS= 480V,ID= 12A, VGS= 10 V (Note 4, 5) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-170.E 12N60 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 12A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current VGS = 0 V, IS = 12A, Reverse Recovery Time tRR dIF/dt = 100 A/µs (Note 4) Reverse Recovery Charge QRR Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature. Power MOSFET MIN TYP MAX UNIT 1.4 12 48 380 3.5 V A A ns µC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 7 QW-R502-170.E 12N60 TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS + L Power MOSFET RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms TEST CIRCUITS AND WAVEFORMS (Cont.) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R502-170.E 12N60 Power MOSFET Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RD VDD D.U.T. tp tp Time VDD ID(t) VDS(t) 10V Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-170.E 12N60 TYPICAL CHARACTERISTICS On-Resign Characteristics VGS 15V 10V 101 8.0V 7.0V 6.5V 6.0V Bottom: 5.5V 10 0 Power MOSFET Transfer Characteristics Top: 101 150°C 25°C 10 0 55°C Notes: 250µs Pulse Test TC=25°C 10-1 100 101 Drain-Source Voltage, VGS (V) 10-1 2 Notes: 1.VDS=50V 2.250µs Pulse Test 4 6 8 Gate-Source Voltage, VGS (V) 10 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R502-170.E 12N60 TYPICAL CHARACTERISTICS Maximum Safe Operating Area 102 Drain Current, ID (A) Operation in This Area is Limited by RDS(ON) 100μs 1ms 100 Notes: 1.TC=25°C 2.TJ=150°C 3.Single Pulse 10ms 100ms DC Power MOSFET 101 10-1 10-2 100 101 102 Drain Source Voltage, VDS (A) 103 70 65 60 55 50 45 40 35 30 25 20 15 10 0 On-Resistance vs. Drain Current and Gate Voltage On-Resistance, RDS(ON) (mµ) VGS=-4.5V VGS=-10V 5 10 15 20 Drain Current, -ID (A) 25 U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. Thermal Response, ZθJC(t) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-170.E