12N70L-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 12N70 12 Amps, 700 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored. Power MOSFET FEATURES * RDS(ON) = 0.87Ω @VGS = 10 V * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free 12N70L-TA3-T 12N70G-TA3-T 12N70L-TF1-T 12N70G-TF1-T 12N70L-TF3-T 12N70G-TF3-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube Note: www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-220.C 12N70 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) SYMBOL VDSS VGSS IAR ID IDM EAS EAR dv/dt Power MOSFET RATINGS UNIT 700 V ±30 V 12 A Continuous 12 A Drain Current Pulsed (Note 2) 48 A Single Pulsed (Note 3) 790 mJ Avalanche Energy 24 mJ Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) 4.5 V/ns TO-220 225 °C/W Power Dissipation PD TO-220F/TO-220F1 51 °C/W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 10mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 12A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case TO-220 TO-220F/TO-220F1 SYMBOL BVDSS IDSS IGSS SYMBOL θJA θJC RATING 62.5 0.56 2.43 UNIT °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge TEST CONDITIONS VGS = 0 V, ID = 250 μA VDS = 700 V, VGS = 0 V VGS = ±30 V, VDS = 0 V MIN TYP MAX UNIT 700 10 ±100 0.7 2.0 0.87 4.0 1.0 V μA nA V/°C V Ω pF pF pF ns ns ns ns nC nC nC △BVDSS/△TJ ID = 250 μA, Referenced to 25°C VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD VDS = VGS, ID = 250μA VGS = 10V, ID = 6.0A VDS = 25 V, VGS = 0 V, f = 1MHz 1480 1900 200 270 25 35 30 115 95 85 42 8.6 21 70 240 200 180 54 VDD = 300V, ID = 12A, RG = 25Ω (Note 1, 2) VDS= 480V,ID= 12A, VGS= 10 V (Note 1, 2) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-220.C 12N70 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 12A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 12A, dIF/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature. Power MOSFET MIN TYP MAX UNIT 1.4 12 48 380 3.5 V A A ns μC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-220.C 12N70 TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-220.C 12N70 TEST CIRCUITS AND WAVEFORMS (Cont.) Power MOSFET Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RD VDD D.U.T. tp tp Time VDD ID(t) VDS(t) 10V Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-220.C 12N70 TYPICAL CHARACTERISTICS Power MOSFET Drain Current, ID (µA) 6 5 Drain Current, ID (A) Drain-Source On-State Resistance Characteristics Drain Current, ID (µA) 14 12 Drain Current, ID (A) 0 1 2 3 4 5 6 Drain to Source Voltage, VDS (V) 10 8 6 4 2 0 0 0.4 0.6 0.8 1.0 1.2 0.2 Source to Drain Voltage, VSD (V) Drain Current vs. Source to Drain Voltage 4 3 2 1 0 U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-220.C