22N65L-T47-T

UNISONIC TECHNOLOGIES CO., LTD 22N65 Preliminary Power MOSFET HEXFET POWER MOSFET DESCRIPTION As the SMPS MOSFET, the UTC 22N65 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 TO-247 FEATURES * RDS(ON) = 350 Ω * Ultra low gate charge ( Typical 150 nC ) * Low reverse transfer capacitance ( CRSS = typical 36 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free 22N65L-T47-T 22N65G-T47-T Package TO-247 Pin Assignment 1 2 3 G D S Packing Tube www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-466.a 22N65 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current IAR 22 A Continuous Drain Current ID 22 A Pulsed Drain Current (Note 1) IDM 88 A Single Pulsed EAS 380 mJ Avalanche Energy Repetitive EAR 37 mJ Peak Diode Recovery dv/dt (Note 2) dv/dt 18 V/ns Power Dissipation PD 370 W Junction Temperature TJ 150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Repetitive rating; pulse width limited by max. junction temperature. 2. ISD ≤ 22A, di/dt ≤540 A/μs, VDD ≤ V(BR)DSS, TJ ≤150°C. 3. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 40 0.34 UNIT °C /W °C /W ELECTRICAL CHARACTERISTICS (TJ =25°C, L = 1.5mH, RG=25Ω, IAS = 22A. Unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA Drain-Source Leakage Current IDSS VDS=650V, VGS=0V Gate- Source Leakage Current IGSS VDS=0V, VGS=±30V Breakdown Voltage Temperature ID=1mA, ΔBVDSS/ΔTJ Coefficient Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=13A (Note 2) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=300V, ID=22A, RG=6.2Ω VGS=10V (Note 2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VDS=480V, VGS=10V, ID=22A Gate Source Charge QGS (Note 2) Gate Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, IS=22A Continuous Source Current IS (Body Diode) (Note 1) Pulsed Source Current (Body Diode) ISM Reverse Recovery Time tRR IS=22A, di/dt=100A/μs (Note 2) Reverse Recovery Charge QRR Note: 1. Repetitive rating; pulse width limited by max. junction temperature. 2. Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. MIN 650 50 ±100 0.30 2.0 0.3 3570 350 36 26 99 48 37 150 45 76 1.5 22 590 7.2 88 890 11 4.0 0.35 TYP MAX UNIT V µA nA V/°C V Ω pF pF pF ns ns ns ns nC nC nC V A A ns µC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-466.a 22N65 TEST CIRCUITS Preliminary Power MOSFET Switching Test Circuit Switching Waveforms Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms 12V 50kΩ 0.2μF 0.3μF Same Type as D.U.T. 10V VDS QGS QG QGD VGS DUT 3mA IG ID Charge VGS Gate Charge Test Circuit Gate Charge Waveform UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-466.a 22N65 TEST CIRCUITS(Cont.) Preliminary Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD VGS (Driver) P.W. Period D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-466.a 22N65 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-466.a