2N3904

UNISONIC TECHNOLOGIES CO., LTD 2N3904 NPN GENERAL PURPOSE AMPLIFIER FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC(MAX)=625mW * Complementary to 2N3906 NPN SILICON TRANSISTOR Lead-free: 2N3904L Halogen-free:2N3904G ORDERING INFORMATION Ordering Number Normal 2N3904-T92-B 2N3904-T92-K Lead Free Plating 2N3904L-T92-B 2N3904L-T92-K Halogen Free 2N3904G-T92-B 2N3904G-T92-K Package TO-92 TO-92 Pin Assignment 1 E E 2 B B 3 C C Packing Tape Box Bulk www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 3 QW-R201-027,C 2N3904 ABSOLUTE MAXIMUM RATING (Ta=25°С) NPN SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 200 mA Collector Dissipation PC 625 mW Junction Temperature TJ 150 °С Operating and Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=10μA, IE=0 Collector-Emitter Breakdown Voltage (note) BVCEO IC=1mA,IB=0 Emitter-Base Breakdown Voltage BVEBO IE=10μA, IC=0 VCE(SAT)1 IC=10mA, IB=1mA Collector-Emitter Saturation Voltage (note) VCE(SAT)2 IC=50mA, IB=5mA VBE(SAT)1 IC=10mA, IB=1mA Base-Emitter Saturation Voltage (note) VBE(SAT)2 IC=50mA, IB=5mA Collector Cut-off Current ICBO VCE=30V, VEB=3V Base Cut-off Current IBL VCE=30V, VEB=3V hFE1 VCE=1V, IC=0.1mA hFE2 VCE=1V, IC=1mA hFE3 VCE=1V, IC=10mA DC Current Gain (note) hFE4 Current Gain Bandwidth Product Output Capacitance Turn on Time hFE5 fT Cob tON VCE=1V, IC=50mA VCE=1V, IC=100mA VCE=20V, IC=10mA, f=100MHz VCB=5V, IE=0, f=1MHz VCC=3V,VBE=0.5V,IC=10mA, IB1=1mA IB1=1B2=1mA MIN TYP MAX UNIT 60 V 40 V 6 V 0.2 V 0.3 V 0.65 0.85 V 0.95 V 50 nA 50 nA 40 70 100 300 60 30 300 4 70 250 MHz pF ns ns Turn off Time tOFF Note: Pulse test: Pulse Width≦300μs, Duty Cycle≦2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R201-027,C 2N3904 TYPICAL CHARACTERISTICS hFE vs. IC 240 DC Current Gain, hFE 200 160 120 80 40 0 0.1 0.3 0.5 1 3 5 10 30 50100 VCE=1V NPN SILICON TRANSISTOR Current Gain-Bandwidth Product, fT (MHz) fT vs. IC 1000 500 300 VCE=20V 100 50 30 10 0.1 0.3 0.5 1 3 5 10 30 50100 Collector Current, IC (mA) Collector Current, IC (mA) Saturation Voltage, VBE(SAT), VCE(SAT) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Capacitance, Cob (pF) 3 of 3 QW-R201-027,C