2N7002ZT

UNISONIC TECHNOLOGIES CO., LTD 2N7002ZT Preliminary Power MOSFET 300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC 2N7002ZT uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Protected * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N7002ZTL-AN3-R 2N7002ZTG-AN3-R Package SOT-523 Pin Assignment 1 2 3 S G D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-538.a 2N7002ZT PARAMETER Drain-Source Voltage Gate-Source Voltage Preliminary SYMBOL VDSS VGSS Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) RATINGS UNIT V 60 V ±20 Continuous 300 Drain Current ID mA Pulse(Note 2) 800 Power Dissipation 200 mW PD Derating above TA=25°C 1.6 mW/°C Junction Temperature TJ °C +150 Storage Temperature TSTG °C -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note) SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS VGS=0V, ID=10µA VDS=60V, VGS=0V VDS=0V, VGS=±20V VDS=10V, ID=1mA VGS=10V, ID=0.5A, TJ=125°C VGS=5V, ID=0.05A MIN 60 1.0 ±10 1.0 1.85 2.5 13.5 7.5 50 25 5.0 20 30 1.5 0.8 115 TYP MAX UNIT V µA µA V Ω pF pF pF ns ns V A mA DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) ID=0.2 A, VDD=30V, VGS=10V, RL=150Ω, RG=10Ω Turn-OFF Delay Time tD(OFF) DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, Is=115mA (Note ) Maximum Pulsed Drain-Source Diode ISM Forward Current Maximum Continuous Drain-Source Diode Is Forward Current Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size. 2. Pulse width≦300μs, Duty cycle≦1% 25 10 3.0 12 20 0.88 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R502-538.a 2N7002ZT Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-538.a