2SB1198G-X-AE3-R

UNISONIC TECHNOLOGIES CO., LTD 2SB1198 LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. 3 PNP EPITAXIAL SILICON TRANSISTOR 2 1 SOT-23 FEATURES * High breakdown voltage : BVCEO= -80V * Low VCE(sat) : VCE(sat)= -0.2V (Typ) (IC/IB = -0.5A/-50mA) ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1198L-x-AE3-R 2SB1198G-x-AE3-R Note: xx: Output Voltage, refer to Marking Information. Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., LTD 1 of 4 QW-R206-040,B 2SB1198 ABSOLUTE MAXIMUM RATING ( Ta=25℃) PNP EPITAXIAL SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -5 V Collector Current IC -0.5 A Collector Power Dissipation PC 0.2 W ℃ Junction Temperature TJ 150 ℃ Storage Temperature TSTG -40 ~ +150 Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range and assured by design from –20℃~85℃. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified PARAMETER SYMBOL TEST CONDITIONS Collector Base Breakdown Voltage BVCBO IC= -50μA Collector Emitter Breakdown Voltage BVCEO IC= -2mA Emitter Base Breakdown Voltage BVEBO IE= -50μA Collector Cut-Off Current ICBO VCB= -50V Emitter Cut-Off Current IEBO VEB= -4V Collector-Emitter Saturation Voltage VCE(sat) IC/IB= -0.5A/-50mA DC Current Transfer Ratio hFE VCE= -3V, IC= -0.1A Transition Frequency fT VCE=-10V, IE= 50 mA, f=100MHz Output Capacitance Cob VCB= -10V, IE= 0 A, f=1MHz MIN -80 -80 -5 TYP MAX UNIT V V V μA μA V MHz pF -0.2 120 180 11 -0.5 -0.5 -0.5 390 CLASSIFICATION OF hFE RANK RANGE MARKING Q 120-270 AKQ R 180-390 AKR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R206-040,B 2SB1198 TYPICAL CHARACTERISTICS -10 -5 -2 -1 -500m -200m -100m -50m -20m -10m -5m -2m -1m 0 Figure 1. Grounded Emitter Propagation Characteristics VCE = -3V Ta=100℃ Ta=25℃ Ta= -25℃ PNP EPITAXIAL SILICON TRANSISTOR Figure 2. Grounded Emitter Output Characteristics Ta=25℃ -5.0mA -45mA -40mA -0.4 -35mA -30mA -25mA -0.3 -1.5mA -20mA -0.2 -0.1 IB =0mA 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 Collector To Emitter Voltage, VCE (V) -1.0mA -0.5mA -0.5 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 Base to Emitter Voltage, VBE (V) Collector Saturation Voltage, VCE(sat) ( V) DC Current Gain, hFE Figure 5. Collector-emitter Saturation Voltage vs. Collector Current (II) -2 IC/IB=10 -1 -500m -200m -100m -50m -20m -10m -1 -100 -10 Collector Current, IC (mA) -1A -2 Figure 6. Collector-Emitter Saturation Voltage vs. Collector Current (III) IC/IB=20 -1 -500m -200m Ta= 100℃ Ta= 25℃ Ta= -25℃ Ta= 100℃ Ta= 25℃ Ta= -25℃ -100m -50m -20m -10m -1 -10 -100 Collector Current, IC (mA) -1A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-040,B 2SB1198 TYPICAL CHARACTERISTICS(Cont.) PNP EPITAXIAL SILICON TRANSISTOR Collector Saturation Voltage, VCE(sat) ( V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. Collector Output Capacitance, Cob (pF) Emitter Input Capacitance, Cib (pF) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Transetion Frequency, fT (MHz) 4 of 4 QW-R206-040,B