2SD669G-X-T6CK

UNISONIC TECHNOLOGIES CO., LTD 2SD669/A BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 1 NPN SILICON TRANSISTOR 1 1 SOT-223 SOT-89 TO-251 TO-252 1 1 TO-92 TO-92NL 1 1 TO-126 TO-126C Lead-free: 2SD669L/2SD669AL Halogen-free:2SD669G/2SD669AG ORDERING INFORMATION Normal 2SD669x-x-AA3-R 2SD669x-x-AB3-R 2SD669x-x-T60-K 2SD669x-x-T6C-K 2SD669x-x-T92-B 2SD669x-x-T92-K 2SD669x-x-T9N-B 2SD669x-x-T9N-K 2SD669x-x-TM3-T 2SD669x-x-TN3-R Ordering Number Lead Free 2SD669xL-x-AA3-R 2SD669xL-x-AB3-R 2SD669xL-x-T60-K 2SD669xL-x-T6C-K 2SD669xL-x-T92-B 2SD669xL-x-T92-K 2SD669xL-x-T9N-B 2SD669xL-x-T9N-K 2SD669xL-x-TM3-T 2SD669xL-x-TN3-R Halogen Free 2SD669xG-x-AA3-R 2SD669xG-x-AB3-R 2SD669xG-x-T60-K 2SD669xG-x-T6C-K 2SD669xG-x-T92-B 2SD669xG-x-T92-K 2SD669xG-x-T9N-B 2SD669xG-x-T9N-K 2SD669xG-x-TM3-T 2SD669xG-x-TN3-R Package SOT-223 SOT-89 TO-126 TO-126C TO-92 TO-92 TO-92NL TO-92NL TO-251 TO-252 Pin Assignment 1 2 3 B C E B C E E C B E C B E C B E C B E C B E C B B C E B C E Packing Tape Reel Tape Reel Bulk Bulk Tape Box Bulk Tape Box Bulk Tube Tape Reel 2SD669xL-x-AB3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (5) Collector-Emitter Voltage (1) B: Tape Box, K: Bulk, R: Tape Reel (2) AA3: SOT-223, AB3: SOT-89, T60: TO-126, (2) T6C: TO-126C, TM3: TO-251, TN3: TO-252, (2) T92:TO-92, T9N: TO-92NL (3) x: refer to Classification of hFE1 (4) G: Halogen Free, L: Lead Free, Blank: Pb/Sn (5) A: 160V, Blank: 120V www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R204-005,H 2SD669/A NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 180 V 2SD669 120 Collector-Emitter Voltage VCEO V 2SD669A 160 Emitter-Base Voltage VEBO 5 V Collector Current IC 1.5 A Collector Peak Current lC(PEAK) 3 A SOT-223 0.5 W SOT-89 0.5 W TO-126/TO-126C 1 W Collector Dissipation PD TO-92/TO-92NL 0.6 W TO-251 1 W TO-252 2 W Junction Temperature TJ 150 °C Storage Temperature TSTG -40 ~ +150 °C Absolute maximum ratings are those values beyond which the device could be permanently damaged. Note: Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector to Base Breakdown Voltage Collector to Emitter Breakdown 2SD669 Voltage 2SD669A Emitter to Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Bandwidth Product Output Capacitance Note: Pulse test. SYMBOL TEST CONDITIONS BVCBO IC=1mA, IE=0 BVCEO BVEBO ICBO hFE1 hFE2 VCE(SAT) VBE fT Cob IC=10mA, RBE=∞ IE=1mA, IC=0 VCB=160V, IE=0 VCE=5V, IC=150mA (Note) VCE=5V, IC=500mA (Note) IC=600mA, IB=50mA (Note) VCE=5V, IC=150mA (Note) VCE=5V, IC=150mA (Note) VCB=10V, IE=0, f=1MHz MIN 180 120 160 5 60 30 TYP MAX UNIT V V 10 320 1 1.5 140 14 V μA V V MHz pF CLASSIFICATION OF hFE1 RANK RANGE B 60-120 C 100-200 D 160-320 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R204-005,H 2SD669/A TYPICAL CHARACTERISTICS 30 0 DC Current Transfer Ratio, hFE 25 0 20 0 15 0 10 0 50 VCE=5V 1 1 3 10 30 100 300 1000 3000 Collector Current, IC (mA) DC Current Transfer Ratio vs. Collector Current Collector to emitter saturation voltage, VCE(SAT) (V) Ta=7 5°C NPN SILICON TRANSISTOR Collector to Emitter Saturation Voltage vs. Collector Current 1.2 IC=10 IB 1.0 0.8 0.6 0.4 0.2 0 =7 TC 25 -20 1 3 10 30 100 300 1000 Collector Current, IC (mA) Base to Emitter Saturation Voltage, VBE(SAT) (V) 1.0 0.8 0.6 0.4 0.2 0 20°C T C=25 75 Gain Bandwidth Product, fT (MHz) Base to Emitter Saturation Voltage vs. Collector Current 1.2 IC=10IB Gain Bandwidth Product vs. Collector Current 240 VCE=5V Ta=25°C 200 160 120 80 40 0 10 1 3 10 30 100 300 Collector Current, IC (mA) 1,000 30 100 300 Collector Current, IC (mA) Area of Safe Operation Collector Output Capacitance, Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 200 f=1MHz IE=0 100 Collector Current, IC (A) 50 20 10 5 2 3 (13.3V, 1.5A) 1.0 40V, 0.5A 0.3 0.1 0.03 0.01 1 DC Operation (TC=25°C) (120V, 0.04A) (160V, 0.02A) 2SD669 100 300 3 10 30 Collector to Emitter Voltage, VCE (V) 2SD669A 1 2 5 10 20 50 100 Collector to Base Voltage, VCB (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 25 -20 5 °C 1,000 3 of 4 QW-R204-005,H 2SD669/A TYPICAL CHARACTERISTICS(Cont.) NPN SILICON TRANSISTOR Collector Current, IC (mA) Ta=7 5 °C UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 25 -20 4 of 4 QW-R204-005,H