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2SD880_11

2SD880_11

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    2SD880_11 - NPN EPITAXIAL TRANSISTOR - Unisonic Technologies

  • 数据手册
  • 价格&库存
2SD880_11 数据手册
UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. NPN SILICON TRANSISTOR FEATURES * High DC Current Gain: hFE=200(Max.)(VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A) * High Power Dissipation: PC=30W (TA=25°C) * Complementary to 2SB834 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD880L-TA3-T 2SD880G-TA3-T Package TO-220 1 B Pin Assignment 2 3 C E Packing Tube www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-013.D 2SD880 ABSOLUTE MAXIMUM RATINGS NPN SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 60 V Emitter to Base Voltage VEBO 7 V Collector Current IC 3 A Base Current IB 0.5 A Power Dissipation PD 30 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA =25°C) PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Current gain bandwidth product SYMBOL BVCEO ICBO IEBO VCE(SAT) VBE(ON) hFE fT TEST CONDITIONS IC=50mA, IE=0 VCB=60V, IE=0 VEB=7V, IC=0 IC=3A, IB=300mA VCE=5V, IC=500mA IC=500mA, VCE=5V VCE=5V, IC=500mA MIN 60 TYP MAX 100 100 1 1 200 3 UNIT V µA µA V V MHZ 100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R203-013.D 2SD880 Voltage, V (V) DC Current Gain,hFE Power Dissipation, PD (W) TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD Collector Current, IC (A) Collector Current, IC (A) www.unisonic.com.tw Collector Current, IC (A) NPN SILICON TRANSISTOR QW-R203-013.D 3 of 4 2SD880 NPN SILICON TRANSISTOR U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-013.D
2SD880_11 价格&库存

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