2SK2751-AE3-R

UNISONIC TECHNOLOGIES CO., LTD 2SK2751 N-CHANNEL JUNCTION FET FEATURES * Low noise-figure (NF). * High gate to drain voltage VGDO. N-CHANNEL JFET APPLICATIONS * For impedance conversion in low frequency. * For pyroelectric sensor. *Pb-free plating product number:2SK2751L ORDERING INFORMATION Ordering Number Normal Lead Free Plating 2SK2751-AE3-R 2SK2751L-AE3-R 2SK2751-AL3-R 2SK2751L-AL3-R Package SOT-23 SOT-323 Pin Assignment 1 2 3 D S G D S G Packing Tape Reel Tape Reel MARKING www.unisonic.com.tw Copyright © 2007 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-087.C 2SK2751 ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) N-CHANNEL JFET PARAMETER SYMBOL RATINGS UNIT Gate-Drain Voltage VGDS -40 V Drain Current ID 10 mA Gate Current IG 2 mA Allowable Power Dissipation PD 200 mW Channel Temperature TCH +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25±3℃, unless otherwise specified) PARAMETER Gate-Drain Voltage Gate-Source Cut-Off Voltage Drain-Source Cut-Off Current Gate-Source Leakage Current Forward Transfer Admittance Input Capacitance (Common Source) Output Capacitance (Common Source) Reverse Transfer Capacitance (Common Source) SYMBOL VGDS VGSC IDSS IGSS | Yfs | CISS COSS CRSS TEST CONDITIONS IG=-100µA, VDS=0 VDS=10V, ID=1µA VDS=10V, VGS=0 VGS=-20V, VDS=0 VDS=10V, VGS=0, f=1kHz VDS=10V, VGS=0, f=1MHz MIN -40 1.4 2.5 5 1 1 TYP MAX -3.5 4.7 -1 UNIT V V mA nA mS pF pF pF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R206-067.C 2SK2751 TYPICAL CHARACTERISTICS Power Dissipatio vs. Ambient Temperature 250 12 N-CHANNEL JFET Drain Current vs. Drain Source Voltage Ta=25°C 200 10 8 150 6 100 4 50 VGS=0.6V 0.4V 0.2V 0V -0.2V 2 0 0 20 40 60 80 100 120 140 160 0 0 2 Ambient Temperature, Ta (℃) Drain Current vs. Gate to Source Voltage 6 8 4 6 10 Drain Source Voltage, VDS (V) 12 VDS=10V 5 Ta=-25℃ 25℃ Forward Transfer Admittance vs. Gate to Source Voltage 12 VDS=10V 10 75℃ 4 8 3 6 2 4 1 2 0 -1 -0.6 -0.2 0.2 0.6 1 0 -1.6 Gate to Source Voltage, VGS (V) Forward Transfer Admittance vs. Drain Current VDS=25V Ta=25℃ -1.2 0 -0.8 -0.4 Gate to Source Voltage, VGS (V) 0.4 12 10 8 6 4 2 0 0 1 4 2 3 Drain Current, ID (mA) 5 6 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-067.C 2SK2751 N-CHANNEL JFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-067.C