5N50L-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 5N50 Preliminary Power MOSFET 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N50 is an N-channel MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also can withstand high energy pulse in the avalanche and communication mode. The UTC 5N50 can be used in applications, such as active power factor correction, high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. 1 TO-220F 1 TO-262 1 FEATURES * 5A, 500V, RDS(on) = 1.4Ω @VGS = 10 V * 100% avalanche tested * High switching speed TO-252 SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 5N50L-TF3-T 5N50G-TF3-T TO-220F 5N50L-TN3-R 5N50G-TN3-R TO-252 5N50L-T2Q-T 5N50G-T2Q-T TO-262 Note: Pin Assignment: G: Gate D: Drain S: Source 1 G G G Pin Assignment 2 D D D 3 S S S Packing Tube Tape Reel Tube www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-476.c 5N50 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Continuous ID 5 A Drain Current Pulsed (Note 1) IDM 20 A Avalanche Current (Note 1) IAR 5 A Single Pulsed (Note 2) EAS 300 mJ Avalanche Energy Repetitive (Note 1) EAR 7.3 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220F 38 W Power Dissipation PD TO-252 54 W TO-262 125 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient TO-220F TO-252 TO-262 TO-220F TO-252 TO-262 SYMBOL θJA RATINGS 62.5 110 62.5 3.25 2.13 1 UNIT °C/W °C/W °C/W °C/W °C/W °C/W Junction to Case θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-476.c 5N50 PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate- Source Leakage Current Forward Reverse Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) SYMBOL BVDSS TEST CONDITIONS ID=250µA, VGS=0V MIN TYP MAX UNIT 500 0.5 1 10 100 -100 2.0 1.14 5.2 480 80 15 18 2.2 9.7 12 46 50 48 4.0 1.4 V V/°C µA nA nA V Ω S pF pF pF nC nC nC ns ns ns ns A A V ns µC △BVDSS/△TJ Reference to 25°C, ID=250µA IDSS IGSS VDS=500V, VGS=0V VDS=400V, TC=125°C VGS=30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2.5A Forward Transconductance (Note 4) gFS VDS=40V, ID=2.5A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 4,5) QG VGS=10V, VDS=400V, ID=5A Gate to Source Charge (Note 4,5) QGS Gate to Drain Charge (Note 4,5) QGD Turn-ON Delay Time (Note 4,5) tD(ON) Rise Time (Note 4,5) tR VDD=250V, ID=5A, RG=25Ω Turn-OFF Delay Time (Note 4,5) tD(OFF) Fall-Time (Note 4,5) tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IS=5A, VGS=0V Reverse Recovery Time (Note 4) tRR IS=5A, VGS=0V, dIF/dt=100A/µs Reverse Recovery Charge (Note 4) QRR Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 21.5mH, IAS = 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 625 105 20 24 35 100 110 105 5 20 1.4 263 1.9 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-476.b 5N50 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT RG + VDS L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-476.b 5N50 Gate Charge Test Circuit Preliminary Power MOSFET Gate Charge Waveforms VGS QG TEST CIRCUITS AND WAVEFORMS(Cont.) Same Type as DUT 12V 200nF 50kΩ VGS DUT 3mA 300nF VDS 10V QGS QGD Charge Unclamped Inductive Switching Test Circuit VDS RG ID Unclamped Inductive Switching Waveforms EAS= 1 LIAS2 2 BVDSS L IAS ID(t) BVDSS BVDSS-VDD 10V tP DUT VDD VDD VDS(t) Time tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-476.b 5N50 Preliminary Power MOSFET U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-476.b