8N60L-X-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 8N60 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. Power MOSFET FEATURES * RDS(ON) = 1.2Ω@VGS = 10 V * Ultra low gate charge ( typical 28 nC ) * Low reverse transfer capacitance ( CRSS = typical 12.0 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 8N60L-x-TA3-T 8N60G-x-TA3-T 8N60L-x-TF1-T 8N60G-x-TF1-T 8N60L-x-TF3-T 8N60G-x-TF3-T 8N60L-x-T2Q-T 8N60G-x-T2Q-T Note: Pin Assignment: G: Gate D: Drain S: Source 8N60L-x-TA3-T (1)Packing Type (2)Package Type (3)Drain-Source Voltage (4)Lead Plating Package TO-220 TO-220F1 TO-220F TO-262 (1) T: Tube (2) TA3: TO-220, TF1: TO220-F1, TF3: TO-220F (2) T2Q: TO-262 (3) A: 600V, B: 650V (4) G: Halogen Free, L: Lead Free Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tube www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-115,D 8N60 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT 8N60-A 600 V Drain-Source Voltage VDSS 8N60-B 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 7.5 A Continuous ID 7.5 A Drain Current 30 A Pulsed (Note 2) IDM Single Pulsed (Note 3) EAS 230 mJ Avalanche Energy Repetitive (Note 2) EAR 14.7 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262 147 W Power Dissipation PD TO-220F/TO-220F1 48 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 7.3mH, IAS = 7.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤7.5A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-262 Junction to Ambient TO-220F/TO-220F1 TO-220/TO-262 Junction to Case TO-220F/TO-220F1 SYMBOL θJA θJC RATING 62.5 62.5 0.85 2.6 UNIT °C/W °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse 8N60-A 8N60-B SYMBOL BVDSS IDSS IGSS TEST CONDITIONS VGS = 0 V, ID = 250 μA VDS = 600 V, VGS = 0 V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 0.7 2.0 1.0 4.0 1.2 MIN TYP MAX UNIT 600 650 10 100 -100 V V µA nA nA V/°C V Ω pF pF pF ns ns ns ns nC nC nC 2 of 8 QW-R502-115,D Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge △BVDSS/△TJ ID = 250 μA, Referenced to 25°C VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD VDS = VGS, ID = 250 μA VGS = 10 V, ID = 3.75 A VDS = 25 V, VGS = 0 V, f = 1MHz 965 1255 105 135 12 16 16.5 45 60.5 130 81 170 64.5 140 28 36 4.5 12 VDD = 300V, ID = 7.5 A, RG = 25Ω (Note 1, 2) VDS= 480V,ID= 7.5A, VGS= 10 V (Note 1, 2) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8N60 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 7.5 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current VGS = 0 V, IS = 7.5 A, Reverse Recovery Time tRR dIF/dt = 100 A/µs (Note 2) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature Power MOSFET MIN TYP MAX UNIT 1.4 7.5 30 365 3.4 V A A ns µC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-115,D 8N60 TEST CIRCUITS AND WAVEFORMS + VDS + L Power MOSFET D.U.T. RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-115,D 8N60 TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDD Power MOSFET VDS VGS RG VDS 90% 10V D.U.T. VGS 10% tD(ON) tR tD(OFF) tF Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms VGS QG 10V QGS QGD Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform BVDSS IAS ID(t) VDD VDS(t) tp Time Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-115,D 8N60 TYPICAL CHARACTERISTICS 100 On-State Characteristics VGS Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5 V Bottorm:5.0V Power MOSFET Transfer Characteristics Drain Current, ID (A) Drain Current, ID (A) 10 10 150°C 25°C 1 5.0V 1 0.1 Notes: 1. 250µs Pulse Test 2. TC=25°C 0.1 1 10 Drain-to-Source Voltage, VDS (V) 0.1 2 Notes: 1. VDS=40V 2. 250µs Pulse Test 4 6 8 10 Gate-Source Voltage, VGS (V) Body Diode Forward Voltage vs. Source Current On-Resistance Variation vs. Drain Current and Gate Voltage Drain-Source On-Resistance, RDS(ON) (ohm) 6 5 VGS=10V 4 3 2 1 0 VGS=20V TJ=25°C 10 Reverse Drain Current, IDR (A) 150°C 25°C 1 0 5 10 15 Drain Current, ID (A) Capacitance Characteristics (Non-Repetitive) 20 0.1 0.2 0.4 0.6 0.8 1.0 1.2 Notes: 1. VGS=0V 2. 250µs Test 1.4 1.6 1.8 Source-Drain Voltage, VSD (V) Gate Charge Characteristics ID=8A VDS=300V VDS=480V VDS=120V 1900 1700 Capacitance (pF) 1500 1300 1100 900 700 500 Crss Ciss Gate-Source Voltage, VGS (V) Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd 12 10 8 6 4 2 0 Coss 300 Notes: 100 1. VGS=0V 2. f = 1MHz 0 0.1 1 10 Drain-SourceVoltage, VDS (V) 0 5 10 15 20 25 30 Total Gate Charge, QG (nC) 6 of 8 QW-R502-115,D UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8N60 TYPICAL CHARACTERISTICS(Cont.) Breakdown Voltage Variation vs. Temperature Drain-Source On-Resistance, RDS(ON) (Normalized) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 Power MOSFET On-Resistance Junction Temperature Drain-Source Breakdown Voltage, BVDSS (Normalized) 1.2 1.1 1.0 0.9 0.8 -100 -50 0 50 Note: 1. VGS=0V 2. ID=250µA 100 150 200 Junction Temperature, TJ (°C) Note: 1. VGS=10V 2. ID=4A -50 0 50 100 150 200 Junction Temperature, TJ (°C) Maximum Drain Current vs. Case Temperature 100 Maximum Safe Operating Area Operation in This Area is Limited by RDS(on) 10 8 Drain Current, ID (A) 6 4 2 0 100µs Drain Current, ID (A) 10 100µs 1ms 10ms DC 1 Notes: 1. TJ=25°C 2. TJ=150°C 0.1 3. Single Pulse 1 10 100 1000 Drain-Source Voltage, VDS (V) 25 50 75 100 125 150 Case Temperature, TC (°C) Transient Thermal Response Curve 1 Thermal Response, θJC (t) D=0.5 D=0.2 D=0.1 0.1 D=0.05 0.02 0.01 Single pulse 1. θJC (t) = 0.85°C/W Max. Notes: 0.01 10-5 10-4 10-3 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-115,D 8N60 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-115,D