0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BC848L-A-AE3-R

BC848L-A-AE3-R

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    BC848L-A-AE3-R - SWITCHING AND AMPLIFIER APPLICATION - Unisonic Technologies

  • 数据手册
  • 价格&库存
BC848L-A-AE3-R 数据手册
UNISONIC TECHNOLOGIES CO., LTD BC846-BC850 SWITCHING AND AMPLIFIER APPLICATION FEATURES * Suitable for automatic insertion in thick and thin-film circuits. * Complement to BC856 … BC860 NPN SILICON TRANSISTOR 3 2 1 SOT-23 3 1 2 SOT-323 *Pb-free plating product number: BC846L/BC847L/BC848L/BC849L/BC850L ORDERING INFORMATION Order Number Normal Lead Free Plating BC846-x-AE3-R BC846L-x-AE3-R BC847-x-AE3-R BC847L-x-AE3-R BC848-x-AE3-R BC848L-x-AE3-R BC849-x-AE3-R BC849L-x-AE3-R BC850-x-AE3-R BC850L-x-AE3-R BC846-x-AL3-R BC846L-x-AL3-R BC847-x-AL3-R BC847L-x-AL3-R BC848-x-AL3-R BC848L-x-AL3-R BC849-x-AL3-R BC849L-x-AL3-R BC850-x-AL3-R BC850L-x-AL3-R Package SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 Pin Assignment 1 2 3 E B C E B C E B C E B C E B C E B C E B C E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel Tape Reel Tape Reel Tape Reel Tape Reel Tape Reel Tape Reel Tape Reel BC846L-x-AE3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) R: Tape Reel (2) AE3: SOT-23, AL3: SOT-323 (3) x: refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn MARKING BC846 BC847 BC848 BC849 BC850 8A 8B 8C 8D 8E : Rank Code,refer to Classification of h FE www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-027,C BC846-BC850 PARAMETER Collector-Base Voltage BC846 BC847 / BC850 BC848 / BC849 BC846 BC847 / BC850 BC848 / BC849 BC846 / BC847 BC848 / BC849 / BC850 SOT-23 SOT-323 SYMBOL VCBO NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified) VALUE 80 50 30 65 45 30 6 5 UNIT V V V V V V V V mA mW mW °C °C Collector-Emitter Voltage VCEO Emitter-Base Voltage Collector Current (DC) VEBO Ic 100 310 Collector Dissipation PD 200 Junction Temperature TJ +150 Storage Temperature TSTG -40 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Input Capacitance BC846/BC847/BC848 BC849/BC850 Noise Figure BC849 BC850 SYMBOL TEST CONDITIONS ICBO VCB=30V, IE=0 hFE VCE=5.0V, Ic=2.0mA Ic=10mA,IB=0.5mA VCE(SAT) Ic=100mA,IB=5.0mA Ic=10mA,IB=0.5mA VBE(SAT) Ic=100mA,IB=5.0mA VCE=5.0V,Ic=2.0mA VBE(ON) VCE=5.0V,Ic=10mA VCE=5.0V,Ic=10mA fT f=100MHz Cob VCB=10V, IE=0, f=1.0MHz Cib VEB=0.5V, IC=0, f=1.0MHz VCE=5V, Ic=200µA, f=1KHz, RG=2KΩ NF VCE=5V, IC=200µA, RG=2KΩ, f=30~15000Hz MIN 110 90 200 700 900 660 TYP MAX UNIT 15 nA 800 250 mV 600 mV mV mV 700 mV 720 mV MHz 6 10 4 4 3 pF pF dB dB dB dB 580 300 3.5 9 2 1.2 1.4 1.4 CLASSIFICATION OF hFE RANK RANGE A 110-220 B 200-450 C 420-800 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R206-027,C BC846-BC850 TYPICAL CHARACTERISTICS Static Characteristic 100 Collector Current , IC(mA) DC Current Gain, hFE NPN SILICON TRANSISTOR DC Current Gain 10000 80 60 40 20 0 0 4 IB=400µA IB=350µA IB=300µA IB=250µA I B=200µA IB=150µA I B=100µA I B=50µA 12 16 20 1000 VCE=5V 100 8 10 1 10 100 1000 Collector-Emitter Voltage, VCE(V) Collector Current, IC(mA) Saturation Voltage, VBE(SAT), VCE(SAT) (V) 1000 VBE(SAT) Collect current, I C(mA) Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10000 IC=10IB Base-Emitter on Voltage 100 VCE=2V 10 100 VCE(sat) 1 10 1 10 100 1000 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 Collector Current IC(mA) , Base-Emitter Voltage, VBE (V) Collector Output Capacitance 100 Current Gain Bandwidth Product 1000 Current Gain-Bandwidth Product, f T(MHz) Capacitance, C ob(pF) f=1MHz 10 V∞=5V 100 1 10 0.1 1 10 100 1000 1 0.1 1 10 100 Collector-Base Voltage, VCB( V) Collector Current, I C(mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-027,C BC846-BC850 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-027,C
BC848L-A-AE3-R 价格&库存

很抱歉,暂时无法提供与“BC848L-A-AE3-R”相匹配的价格&库存,您可以联系我们找货

免费人工找货