BT151L-8-TN3-R

UNISONIC TECHNOLOGIES CO., LTD BT151 SCRS DESCRIPTION Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. SCR 1 TO-220 SYMBOL 1 TO-252 ORDERING INFORMATION Order Number Lead Free Halogen Free BT151L-5-TA3-T BT151G-5-TA3-T BT151L-5-TN3-R BT151G-5-TN3-R BT151L-6-TA3-T BT151G-6-TA3-T BT151L-6-TN3-R BT151G-6-TN3-R BT151L-8-TA3-T BT151G-8-TA3-T BT151L-8-TN3-R BT151G-8-TN3-R Note: Pin assignment: K: CATHODE A: ANODE Package TO-220 TO-252 TO-220 TO-252 TO-220 TO-252 G: GATE Pin Assignment 1 2 3 K A G K A G K A G K A G K A G K A G Packing Tube Tape Reel Tube Tape Reel Tube Tape Reel www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 5 QW-R301-017,C BT151 ABSOLUTE MAXIMUM RATING PARAMETER SCR SYMBOL RATINGS UNIT BT151-5 500 (Note 1) V Repetitive Peak Off-State Voltages VDRM, VRRM BT151-6 650 (Note 1) 800 BT151-8 Average On-State Current (half sine wave; Tmb ≤109°C) IT(AV) 7.5 A RMS on-State Current (all conduction angles) IT(RMS) 12 A Non-Repetitive Peak On-State Current t = 10 ms 100 A ITSM (half sine wave; TJ = 25 °C prior to surge) t = 8.3 ms 110 I2t for Fusing (t = 10 ms) I2t 50 A2s Repetitive Rate of Rise of On-State Current After Triggering dIT /dt 50 A/μs (ITM = 20 A; IG = 50 mA; dIG /dt = 50 mA/μs) Peak Gate Current IGM 2 A Peak Gate Voltage VGM 5 V Peak Reverse Gate Voltage VRGM 5 V Peak Gate Power PGM 5 W Average Gate Power (Over any 20 ms period) PG(AV) 0.5 W Storage Temperature Tstg -40 ~150 °C Operating Junction Temperature TJ 125 °C Note: 1. Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15A/μs. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Mounting Base Junction to Ambient SYMBOL θJMb θJA RATINGS 1.3 60 UNIT K/W K/W STATIC CHARACTERISTICS (TJ=25℃,unless otherwise stated) PARAMETER Gate Trigger Current Latching Current Holding Current On-State Voltage Gate Trigger Voltage Off-State Leakage Current SYMBOL IGT IL IH VT VGT I D , IR CONDITIONS VD = 12 V, IT = 0.1 A VD = 12 V, IGT = 0.1 A VD = 12 V, IGT = 0.1 A IT = 23 A VD = 12 V, IT = 0.1 A VD = VDRM(max) , IT = 0.1 A, TJ = 125 °C VD = VDRM(max) , VR = VRRM(max) ,TJ = 125°C MIN TYP 2 10 7 1.4 0.6 0.4 0.1 MAX 15 40 20 1.75 1.5 0.5 UNIT mA mA mA V V mA 0.25 DYNAMIC CHARACTERISTICS(TJ=25℃,unless otherwise stated) PARAMETER Critical Rate of Rise of Off-State Voltage Gate Controlled Turn-on Time Circuit Commutated Turn-off tIme SYMBOL CONDITIONS VDM = 67% VDRM(max), Gate open circuit dVD /dt TJ = 125 °C, exponential waveform; RGK = 100Ω ITM = 40 A, VD = VDRM(max), IG = 0.1 A, tGT dIG /dt = 5 A/μs VD = 67% VDRM(max), TJ = 125°C; tQ ITM = 20 A, VR = 25 V, dITM /dt = 30 A/μs, dVD /dt = 50 V/μs, RGK = 100 Ω MIN 50 200 TYP 130 1000 2 70 MAX UNIT V/μs μs μs UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R301-017,C BT151 TYPICAL CHARACTERISTICS Fig 1. Maximum On-State Dissipation, ptot, Versus Average On-State Current, IT(AV), Where a=form factor=IT(RMS)/IT(AV) Conduction form angle factor degrees a 4 30 2.8 60 10 2.2 90 1.9 120 1.57 180 SCR 15 Ptot/W Fig 2. Maximum Permissible Non-Repetitive Peak On-State Current ITSM,Versus Pulse Width tp, for Sinusoidal Currents, tp ≤ 10ms Tmb(max)/°C ITSM/A 105.5 1000 1.9 α=1.57 112 100 IT 118.5 α T 2.2 2.8 4 dIT/dt limit ITSM time 100µs T/s 1ms 10ms 5 0 0 1 2 3 45 IT(AV)/A 6 78 125 TJ initial=25°C max 10 10µs Fig 3. Maximum Permissible Rms Current lT(RMS), Versus Mounting Base Temperature Tmb IT(RMS)/A 15 109°C 10 Fig 4. Maximum Permissible Non-Repetitive Peak On-State Current ITSM,Versus Number Of Cycles,For Sinusoidal Currents, f=50HZ ITSM/A 120 ITSM IT 100 T time 80 TJ initial=25°C max 60 5 40 20 0 -50 0 50 100 Tmb/°C 150 0 1 10 100 1000 Number Of Half Cycles At 50Hz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R301-017,C BT151 TYPICAL CHARACTERISTICS (Cont.) Fig 7. Normalised Gate Trigger Current IGT(TJ)/ IGT(25°C), Versus Junction Temperature TJ IGT(TJ) IGT(25°C) 3 2.5 2 1.5 1 0.5 0 -50 0 50 TJ/°C 100 150 Fig 8. Normalised Latching Current IL(TJ)/IL(25°C), Versus Junction Temperature TJ IL(TJ) IL(25°C) 3 2.5 2 1.5 1 0.5 0 -50 0 50 TJ/°C 100 150 SCR Fig 9. Normalised Holding Current IH(TJ)/IH(25 Versus Junction Temperature TJ 3 IH(TJ) IH(25°C) ), Fig 10. Typical and Maximum On-State Characteristic IT/A 30 2.5 2 1.5 1 0.5 0 -50 0 50 TJ/°C 100 150 TJ=125°C 25 TJ=25°C 20 15 10 5 0 0 0.5 typ max 1 VT/V 1.5 2 Fig 11.Transient Thermal Impedance Zthj-mb, Versus Pulse Width tp Zth j-mb(K/W) 10 1 0.1 PD 0.01 t 0.001 10us 0.1ms 1ms 10ms 0.1s 1s 10s Fig 12. Typical, Critical Rate Of Rise Of Off-State Voltage, dVD/dt Versus Junction Temperature TJ dVD/dt(V/µs) 10000 1000 RGK=100Ω tp 100 gate open circuit 10 0 50 TJ/°C 100 150 tp/s UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R301-017,C BT151 SCR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R301-017,C