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HE8050G-D-AE3-R

HE8050G-D-AE3-R

  • 厂商:

    UTC(友顺)

  • 封装:

    SOT-23

  • 描述:

    低压大电流小信号NPN晶体管 VCBO=40V VCEO=25V VEBO=6V SOT23

  • 数据手册
  • 价格&库存
HE8050G-D-AE3-R 数据手册
UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications.  FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up to 25V *Complimentary to UTC HE8550  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free HE8050G-x-AB3-R SOT-89 HE8050G-x-AE3-R SOT-23 HE8050L-x-T92-B HE8050G-x-T92-B TO-92 HE8050L-x-T92-K HE8050G-x-T92-K TO-92 HE8050L-x-T9N-B HE8050G-x-T9N-B TO-92NL HE8050L-x-T9N-K HE8050G-x-T9N-K TO-92NL Note: Pin Assignment: B: Base C: Collector E: Emitter  Pin Assignment 1 2 3 B C E E B C E C B E C B E C B E C B Packing Tape Reel Tape Reel Tape Box Bulk Tape Box Bulk MARKING SOT-89 SOT-23 DAG TO-92NL 1 TO-92 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R211-018.G HE8050  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA = 25C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage RATINGS UNIT 40 V 25 V 6 V SOT-23 350 mW Collector Dissipation PC SOT-89 500 mW TO-92/TO-92NL 1 W Collector Current IC 1.5 A Junction Temperature TJ +150 C Storage Temperature TSTG -65 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  SYMBOL VCBO VCEO VEBO THERMAL DATA PARAMETER Junction to Case  SYMBOL SOT-23 SOT-89 TO-92 TO-92NL θJC UNIT °C/W ELECTRICAL CHARACTERISTICS (TA = 25C, unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance  RATINGS 110 40 80 78 SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(SAT) VBE(SAT) VBE fT Cob TEST CONDITIONS IC=100A, IE=0 IC=2mA, IB=0 IE=100μA, IC=0 VCB=35V, IE=0 VEB=6V, IC=0 VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=1V, IC=10mA VCE=10V, IC=50mA VCB=10V, IE=0, f=1MHz MIN 40 25 6 TYP 45 85 40 135 160 110 MAX UNIT V V V 100 nA 100 nA 500 0.5 1.2 1.0 100 9.0 V V V MHz pF CLASSIFICATION of hFE2 RANK RANGE C 120-200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw D 160-300 E 250-500 2 of 4 QW-R211-018.G HE8050 TYPICAL CHARACTERISTICS Static Characteristics DC Current Gain 3 10 IB=3.0mA VCE=1V IB=2.5mA 0.4 DC current Gain, hFE Collector Current, Ic (mA) 0.5 IB=2.0mA 0.3 IB=1.5mA 0.2 IB=1.0mA IB=0.5mA 0.1 0 0.4 0.8 1.2 1.6 2 10 1 10 0 10 0 2.0 -1 10 Collector-Emitter Voltage ( V) 0 10 1 10 2 10 3 10 Collector Current, Ic (mA) Base-Emitter on Voltage Saturation Voltage 3 10 4 10 VCE=1V Saturation Voltage (mV) Collector Current, Ic (mA) Ic=10*IB 2 10 1 10 0 10 VBE(SAT) 3 10 2 10 VCE(SAT) 1 10 0.2 0.4 0.6 0.8 1.0 1.2 -1 10 Base-Emitter Voltage (V) 2 10 3 10 Capacitance, Cob (pF) 3 10 VCE=10V 2 10 1 10 0 10 1 10 Collector Output Capacitance 3 10 0 10 0 10 Collector Current, Ic (mA) Current Gain-Bandwidth Product Current Gain-Bandwidth Product, fT (MHz)  NPN SILICON TRANSISTOR 1 10 2 10 3 10 Collector Current, Ic (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw f=1MHz IE=0 2 10 1 10 0 10 0 10 1 10 2 10 3 10 Collector-Base Voltage (V) 3 of 4 QW-R211-018.G HE8050  NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R211-018.G
HE8050G-D-AE3-R 价格&库存

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HE8050G-D-AE3-R
  •  国内价格
  • 1+0.12321
  • 30+0.11881
  • 100+0.11441
  • 500+0.10560
  • 1000+0.10120
  • 2000+0.09856

库存:0

HE8050G-D-AE3-R
    •  国内价格
    • 20+0.19087
    • 200+0.15450
    • 600+0.13428

    库存:291