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HE8550-E-T9N-B

HE8550-E-T9N-B

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    HE8550-E-T9N-B - LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR - Unisonic Technologies

  • 数据手册
  • 价格&库存
HE8550-E-T9N-B 数据手册
UNISONIC TECHNOLOGIES CO., LTD HE8550 LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. PNP SILICON TRANSISTOR 1 3 2 SOT-89 1 SOT-23 1 TO-92 FEATURES * Collector current up to 1.5A * Collector-Emitter voltage up to 25 V * Complimentary to UTC HE8050 1 TO-92NL *Pb-free plating product number: HE8550L ORDERING INFORMATION Order Number Normal Lead Free Plating HE8550-x-AB3-R HE8550L-x-AB3-R HE8550-x-AE3-R HE8550L-x-AE3-R HE8550-x-T92-B HE8550L-x-T92-B HE8550-x-T92-K HE8550L-x-T92-K HE8550-x-T9N-B HE8550L-x-T9N-B HE8550-x-T9N-K HE8550L-x-T9N-K HE8550-x-T9N-R HE8550L-x-T9N-R Package SOT-89 SOT-23 TO-92 TO-92 TO-92NL TO-92NL TO-92NL Pin Assignment 1 2 3 B C E E B C E C B E C B E C B E C B E C B Packing Tape Reel Tape Reel Tape Box Bulk Tape Box Bulk Tape Reel HE8550L-x-AE3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel (2) AB3: SOT-89, AE3: SOT-23, T92: TO-92, T 9N: TO-92NL (3) x: refer to Classification of hFE2 (4) L: Lead Free Plating, Blank: Pb/Sn MARKING(For SOT-23 Package) BA www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-031,B HE8550 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCBO VCEO VEBO PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified) RATINGS UNIT -40 V -25 V -6 V SOT-23 350 mW Collector Dissipation (Ta=25℃) PC SOT-89 0.5 W TO-92/TO-92NL 1 W Collector Current IC -1.5 A Junction Temperature TJ +150 ℃ Operating Ambient Temperature TOPR -40 ~ +150 ℃ Storage Temperature TSTG -65 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO IC=-2mA, IB=0 Emitter-Base Breakdown Voltage BVEBO IE=-100µA, IC=0 Collector Cut-Off Current ICBO VCB=-35V, IE=0 Emitter Cut-Off Current IEBO VEB=-6V, IC=0 hFE1 VCE=-1V, IC=-5mA DC Current Gain hFE2 VCE=-1V, IC=-100mA hFE3 VCE=-1V, IC=-800mA Collector-Emitter Saturation Voltage VCE(SAT) IC=-800mA, IB=-80mA Base-Emitter Saturation Voltage VBE(SAT) IC=-800mA, IB=-80mA Base-Emitter Voltage VBE VCE=-1V,IC=-10mA Current Gain Bandwidth Product fT VCE=-10V,IC=-50mA Output Capacitance Cob VCB=-10V, IE=0 f=1MHz MIN -40 -25 -6 TYP MAX UNIT V V V nA nA -100 -100 45 85 40 170 160 80 -0.28 -0.98 -0.66 190 9.0 500 -0.5 -1.2 -1.0 100 V V V MHz pF CLASSIFICATION OF hFE2 RANK RANGE C 120-200 D 160-300 E 250-500 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R206-031,B HE8550 TYPICAL CHARACTERISTICS Static Characteristics -0.5 Collector Current, IC (mA) PNP SILICON TRANSISTOR DC Current Gain 103 VCE=-1V DC Current Gain, hFE -0.4 IB=-3.0mA -0.3 -0.2 IB =-2.5mA IB =-2.0mA IB =-1.5mA IB=-1.0mA 102 101 -0.1 IB=-0.5mA 0 -0 -0.4 -0.8 -1.2 -1.6 -2.0 Collector-Emitter Voltage ( V) 100 -1 -10 -100 -10 1 -102 -103 Collector Current, IC (mA) -103 Collector Current, I C (mA) Base-Emitter on Voltage -104 Saturation Voltage (mV) Saturation Voltage IC=10*IB VBE(SAT) VCE=-1V -102 -103 -101 -102 VCE(SAT) -101 -10-1 -100 0 -0.2 -0.4 -0.6 -0.8 Base-Emitter Voltage (V) -1.0 -100 -101 -102 Collector Current IC (mA) , -103 Current Gain-Bandwidth Product, fT(MHz) Current Gain-Bandwidth Product 103 Capacitance, C ob (pF) 3 Collector Output Capacitance 10 f=1MHz IE =0 102 VCE=-10V 102 101 101 100 0 -10 -101 -10 2 -10 3 Collector Current, IC (mA) 100 0 -10 -101 -102 -103 Collector-Base Voltage (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-031,B HE8550 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-031,B
HE8550-E-T9N-B 价格&库存

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