MPSA44

UTC MPSA 44/ 45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V(MPSA44) VCEO=350V(MPSA45) *Collector current up to 300mA *Complement to MPSA94/93 *Collector Dissipation: Pc(max)=625mW 1 APPLICATION *Telephone switching *High voltage switch SOT-89 1:EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER Collector-base voltage MPSA44 MPSA45 Collector-emitter voltage MPSA44 MPSA45 Emitter-base voltage Collector dissipation(Ta=25°C) Collector dissipation(Tc=25°C) Collector current Junction Temperature Storage Temperature SYMBOL VCBO RATING 500 400 UNIT V V VCEO VEBO Pc Pc Ic Tj TSTG 400 350 6 625 1.5 300 150 -55 ~ +150 V mW W mA °C °C ELECTRICAL CHARACTERISTICS (Tj=25°C,unless otherwise specified) PARAMETER Collector-base breakdown voltage MPSA44 MPSA45 Collector-emitter breakdown voltage MPSA44 MPSA45 Emitter-base breakdown voltage Collector cut-off current MPSA44 MPSA45 Collector cut-off current MPSA44 MPSA45 SYMBOL BVCBO TEST CONDITIONS Ic=100µA,IB=0 MIN 500 400 TYP MAX UNIT V BVCEO Ic=1mA,IB=0 400 350 6 0.1 0.1 µA VCE=400V,IB=0 VCE=320V,IB=0 0.5 0.5 V V µA BVEBO ICBO IE=100µA,Ic=0 VCB=400V,IE=0 VCB=320V,IE=0 ICES UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R208-006,A UTC MPSA 44/ 45 NPN EPITAXIAL SILICON TRANSISTOR PARAMETER Emitter cut-off current DC current gain(note) SYMBOL IEBO hFE TEST CONDITIONS VEB=4V,Ic=0 VCE=10V,Ic=1mA VCE=10V,Ic=10mA VCE=10V,Ic=50mA VCE=10V,Ic=100mA Ic=1mA,IB=0.1mA Ic=10mA,IB=1mA Ic=50mA,IB=5mA Ic=10mA,IB=1mA VCE=20V,Ic=10mA, f=100MHz VCB=20V,IE=0 f=1MHz MIN 40 50 45 40 TYP MAX 0.1 240 UNIT µA Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage Current gain bandwidth product Output capacitance VBE(sat) fT Cob 0.4 0.5 0.75 0.75 50 7 V V MHz pF Note:Pulse test:PW