MPSA55

UTC MPSA05/55 NPN MPSA05 PNP MPSA55 FEATURES *Collector-Emitter Voltage: VCEO=60V *Collector Dissipation: PD=625mW AMPLIFIER TRANSISTOR 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current - Continuous Total device dissipation, @TA=25°C Derate above 25°C Total device dissipation, @TC=25°C Derate above 25°C Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic PD PD Tj TSTG RATING 60 60 4 500 625 5 1500 12 -55 ~ +150 -55 ~ +150 UNIT V V V mA mW mW/°C mW mW/°C °C °C THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX UNIT °C/W °C/W Thermal resistance, junction to ambient RθJA (note) 200 Thermal resistance, junction to case RθJC 83.3 Note: RθJA is measured with the device soldered into a typical printed circuit board. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-emitter breakdown voltage (note 1) Emitter-base breakdown voltage Collector cutoff current Collector cutoff current SYMBOL V(BR)CEO V(BR)EBO ICES ICBO TEST CONDITIONS IC=1.0mA, IB=0 IE=100µA, Ic=0 VCE=60V, IB=0 VCB=60V, IE=0 MIN 60 4 TYP MAX UNIT V V µA µA 0.1 0.1 UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-034,A UTC MPSA05/55 PARAMETER ON CHARACTERISTICS DC current gain Collector-emitter saturation voltage Base-emitter on voltage SMALL-SIGNAL CHARACTERISTICS Current gain bandwidth product (note 2) AMPLIFIER TRANSISTOR SYMBOL hFE VCE(sat) VBE(on) fT TEST CONDITIONS IC=10mA, VCE=1V IC=100mA, VCE=1V IC=100mA, IB=10mA IC=100mA, VCE=1V MPSA05: IC=10mA, VCE=2V, f=100MHz MPSA55: IC=100mA, VCE=1V, f=100MHz MIN 100 100 TYP MAX UNIT 0.25 1.2 V V 100 50 MHz MHz Note 1: Pulse test: PW