PN2907AL-T92-K

UNISONIC TECHNOLOGIES CO.,LTD. PN2907A PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION This UTC PN2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. PNP EPITAXIAL SILICON TRANSISTOR 1 TO-92 * Pb-free plating product number: PN2907AL PIN CONFIGURATION PIN NO. PIN NAME 1 Emitter 2 Base 3 Collector ORDERING INFORMATION Order Number Normal Lead free PN2907A-T92-B PN2907AL-T92-B PN2907A-T92-K PN2907AL-T92-K Package TO-92 TO-92 Packing Tape Box Bulk www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co.,LTD. 1 QW-R201-041.B PN2907A PNP EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Note 1) (Ta=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO 60 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5 V Collector Current-Continuous IC 800 mA 625 mW Power Dissipation PD 5.0 mW/°C Derate above 25°C Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note 1: These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Note 2: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Note 3: All voltage (V) and currents (V) are negative polarity for PNP transistors. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS Ic=0.1mA, VCE=10V Ic=1.0 mA, VCE=10V Ic=10 mA, VCE=10V Ic=150 mA, VCE=10V* Ic=500 mA, VCE=10V* Ic=150mA, IB=15mA Ic=500mA, IB=50mA Ic=150mA, IB=15mA* Ic=500mA, IB=50mA 75 100 100 100 50 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO IB ICEX ICBO TEST CONDITIONS IC=10mA, IB=0 IC=10µA, IE=0 IE=10µA , IC=0 VCB=30V, VEB=0.5V VCE=30V, VBE=0.5V VCB=50V, IE=0 VCB=50V, IE=0, Ta=150°C MIN 60 60 5 50 50 0.02 20 TYP MAX UNIT V V V nA nA µA µA DC Current Gain hFE 300 0.4 1.6 1.3 2.6 V V V V MHz pF pF ns ns ns ns ns ns Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage VCE(sat) VBE(sat) SMALL SIGNAL CHARACTERISTICS Current Gain – Bandwidth Product fT Ic=50mA, VCE=20V, f=100MHz Output Capacitance Cobo VCB=10V, IE=0, f=100kHz Input Capacitance Cibo VEB=2V, IC=0, f=100kHz SWITCHING CHARACTERISTICS Turn-on Time tON Vcc=30V, Ic=150mA Delay Time tDLY IB1=15mA Rise Time tR Turn-off Time tOFF Vcc=6V, Ic=150mA Storage Time tS IB1=IB2=15mA Fall Time tF * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle≤2.0% Note: All voltages (V) and currents (A) are negative polarity for PNP transistors 200 8 30 45 10 40 100 80 30 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 QW-R201-041.B PN2907A THERMAL DATA PARAMETER Thermal Resistance Junction- Ambient Thermal Resistance Junction- Case SYMBOL PNP EPITAXIAL SILICON TRANSISTOR ΘJA ΘJc RATINGS 200 83.3 UNIT °C/W TEST CIRCUIT -30V 200Ω 1.0kΩ 0 -16V 50Ω ≤200ns Fig. 1 Saturated Turn-On Switching Time Test Circuit 1.5V -6.0V NOTE: BVEBO=5.0V 1.0kΩ 0 -30V 50Ω 1kΩ 37Ω ≤200ns Fig. 2 Saturated Turn-Off Switching Time Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 QW-R201-041.B PN2907A TYPICAL CHARACTERISTICS Typical Pulsed Current Gain vs Collector Current TYPICAL PULSED CURRENT GAIN, hFE PNP EPITAXIAL SILICON TRANSISTOR Collector-Emitter Saturation Voltage vs Collector Current COLLECTOR EMITTER VOLTAGE, VCESAT (V) 500 400 300 200 100 0 0.1 0.3 1 3 10 30 25℃ -40℃ 125℃ VCE =5V 1 0.8 0.6 0.4 0.2 0 β=10 25℃ 125℃ -40℃ 100 500 100 300 1 10 COLLECTOR CURRENT, IC (mA) COLLECTOR CURRENT, IC (mA) Base-Emitter Saturation Voltage vs Collector Current 1 -40℃ 0.8 0.6 0.4 0.2 0 1 10 100 β =10 500 25℃ 125℃ BASE EMITTER ON VOLTAGE, VBEON (V) BASE EMITTER VOLTAGE, VBESAT (V) Base Emitter ON Voltage vs Collector Current 1 0.8 0.6 0.4 0.2 0 0.1 1 VCE=5V 10 25 -40℃ 25℃ 125℃ COLLECTOR CURRENT, IC (mA) COLLECTOR CURRENT, IC (mA) COLLECTOR CURRENT, ICBO (nA) 100 10 1 0.1 0.01 Collector-Cutoff Current vs Ambient Temperature CAPACITANCE (pF) Input and Output Capacitance vs Reverse Bias Voltage 20 16 12 8 4 0 -0.1 -1 Cob Cib VCB=35V 25 50 75 100 125 -10 -50 AMBIENT TEMP ERATURE, Ta (℃) REVERSE BIAS VOLTAGE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 QW-R201-041.B PN2907A TYPICAL CHARACTERISTICS(cont.) Switching Times vs Collector Current 250 200 TIME (nS) PNP EPITAXIAL SILICON TRANSISTOR IC IB1 =IB2 = 10 VCC=15V TIME (nS) 500 400 ts 300 200 100 0 Turn On and Turn Off Times vs Collector Current IC IB1=I B2= 10 VCC=15V 150 100 tR 50 0 10 tDLY 100 tF tOFF tON 10 100 COLLECTOR CURRENT, I C (mA) 1000 1000 COLLECTOR CURRENT, I C (mA) R ise Time vs Collector and Turn On Base Currents tR =15V Power Dissipation vs Ambient Temperature 20 10 5 30ns 2 1 10 60ns 100 COLLECTOR CURRENT, I C (mA) 500 POWER DISSIPATION, PD (W) TURN ON BASE CURRENT , IBf (mA) 50 1 0.75 0.5 0.25 0 0 25 50 75 100 125 150 TEMPERATURE, (℃) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 QW-R201-041.B PN2907A RELATIVE TO VALUES AT IC=10mA, CHAR Common Emitter Characteristics 5 2 1 0.5 0.2 0.1 -1 -2 -5 -10 hoe hre hfe hie VCE= -10V Ta=25℃ -20 -50 PNP EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS FOR COMMON EMITTER (f=1kHz) RELATIVE TO VALUES AT VCE=10V, CHAR Common Emitter Characteristics 1.3 1.2 1.1 1 hie 0.9 hfe 0.8 -4 -8 -12 -16 -20 IC= -10mA Ta=25℃ hre and hoe hre hie hfe hoe COLLECTOR CURRENT, IC (mA) COLLECTOR VOLTAGE, VCE (V) Common Emitter Characteristics RELATIVE TO VALUES AT T A=25℃, CHAR 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 I C=-10mA VCE=-10V hoe hre hie hfe -40 -20 0 20 40 hfe hie hre hoe 60 80 100 AMBIENT TEMPERATURE, Ta (℃) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 QW-R201-041.B