UF740L-TF3-T

UNISONIC TECHNOLOGIES CO., LTD UF740 10A, 400V, 0.55 OHM, N-CHANNEL POWER MOSFET DESCRIPTION The UF740 power MOSFET is designed for high voltage, high speed power switching applications such as switching power supplies, switching adaptors etc. MOSFET 1 TO-220 FEATURES * 10A, 400V, RDS(ON)(0.55Ω) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching 1 TO-220F SYMBOL 2.Drain *Pb-free plating product number: UF740L 1 .Gate 3.Source ORDERING INFORMATION Order Number Package Normal Lead Free Plating UF740-TA3-T UF740L-TA3-T TO-220 UF740-TF3-T UF740L-TF3-T TO-220F Note: Pin Assignment: G: GATE D: DRAIN S: SOURCE UF740L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating, Blank: Pb/Sn Pin Assignment 1 2 3 G D S G D S Packing Tube Tube www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-078,A UF740 ABSOLUTE MAXIMUM RATINGS (TC = 25℃, Unless Otherwise Specified) PARAMETER Drain to Source Voltage (TJ =25℃~125℃) Drain to Gate Voltage (RGS = 20kΩ) (TJ =25℃~125℃) Gate to Source Voltage Continuous TC = 100℃ Drain Current Pulsed Maximum Power Dissipation Derating above 25℃ SYMBOL VDS VDGR VGS ID ID IDM PD RATINGS 400 400 ±20 10 6.3 40 125 1.0 MOSFET UNIT V V V A A A W W/℃ Single Pulse Avalanche Energy Rating 520 mJ EAS (VDD=50V, starting TJ =25℃, L=9.1µH, RG=25Ω, peak IAS = 10A) Operating Temperature Range TOPR -55 ~ +150 ℃ Storage Temperature Range TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case SYMBOL θJA θJc RATINGS 62.5 1.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS (TC =25℃, Unless Otherwise Specified.) PARAMETER Drain to Source Breakdown Voltage Gate to Threshold Voltage On-State Drain Current (Note 1) Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 1) Forward Transconductance (Note 1) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain “Miller” Charge Input Capacitance Output Capacitance Reverse - Transfer Capacitance SYMBOL TEST CONDITIONS BVDSS VGS = 0V, ID = 250µA MIN TYP MAX UNIT 400 2.0 10 4.0 25 250 ±500 0.47 0.55 5.8 8.9 15 25 52 25 41 6.5 23 1250 300 80 21 41 75 36 63 V V A µA µA nA Ω S ns ns ns ns nC nC nC pF pF pF VGS(THR) VGS = VDS, ID = 250µA ID(ON) VDS >ID(ON) x RDS(ON)MAX, VGS =10V VDS = Rated BVDSS, VGS = 0V IDSS VDS=0.8 x Rated BVDSS, VGS=0V,TJ=125℃ IGSS VGS = ±20V RDS(ON) gFS tDLY(ON) tR tDLY(OFF) tF QG(TOT) QGS QGD CISS COSS CRSS VGS = 10V, ID = 5.2A VDS ≥ 50V, ID = 5.2A VDD = 200V, ID ≈ 10A, RGS = 9.1Ω, RL = 20Ω, VGS = 10V MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V, ID = 10A VDS = 0.8 x Rated BVDSS IG(REF) = 1.5mA Gate Charge is Essentially Independent of Operating Temperature VGS = 0V, VDS =25V, f = 1.0MHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-078,A UF740 ELECTRICAL CHARACTERISTICS(Cont.) SOURCE TO DRAIN DIODE SPECIFICATIONS Source to Drain Diode Voltage TJ = 25℃, ISD = 10A, VGS = 0V VSD (Note 1) Modified MOSFET Continuous Source to Drain IS Symbol Showing Current the Integral Pulse Source to Drain Current Reverse P-N (Note 2) Junction Diode G ISM MOSFET 2.0 V A D 10 40 A S TJ = 25℃, ISD = 10A, dISD/dt = 100A/µs Reverse Recovery Time tRR TJ = 25℃, ISD = 10A, dISD/dt = 100A/µs Reverse Recovery Charge QRR NOTES: 1. Pulse Test: Pulse width ≤ 300µs, Duty Cycle≤2%. 2. Repetitive rating: Pulse width limited by maximum junction temperature. 3. VDD = 50V, starting TJ = 25℃, L = 3.37mH, RG = 25Ω, peak IAS = 10A. 170 1.6 390 4.5 790 8.2 ns µC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-078,A UF740 TEST CIRCUITS AND WAVEFORMS VDS L BVDSS MOSFET RG D.U.T. VDD IAS VDS VDD 0.01Ω IAS Figure 1A. Unclamped Energy Test Circuit 0 tp tAV Figure 1B. Unclamped Energy Waveforms VDS RL 90% 10% 90% RG VDD VGS D.U.T. 0 VGS 10% 0 50% PULSE WIDTH 50% tD(ON) tON Figure 2A. Switching Time Test Circuit tR t D(OFF) t F t OFF Figure 2B. Resistive Switching Waveforms CURRENT REGULATOR 12V BATTERY 50kΩ 0.2µF 0.3µF D VDS (ISOLATED SUPPLY) SAME TYPE AS DUT VDD Q G(TOT) QGS Q GD VGS VDS G 0 IG(REF) IG CURRENT SAMPLING RESISTOR S I D CURRENT SAMPLING RESISTOR D UT 0 IG(REF) 0 Figure 3A. Gate Charge Test Circuit Figure 3B. Gate Charge Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-078,A UF740 TYPICAL PERFORMANCE CUVES (Unless Otherwise Specified) MOSFET Forward Bias Safe Operating Area 100 10μs Output Characteristics 15 12 9 VGS = 5.0V 6 3 0 VGS = 4.5V VGS = 4.0V VGS = 10V VGS = 6.0V PULSE DURATION=80μS DUTY CYCLE = 0.5% MAX VGS = 5.5V Drain Current, I D (A) 10 100μs 1ms OPERATION IN THIS 1 REGION IS LIMITED BY RDS(ON) TC=25℃ TJ=MAX RATED SINGLE PULSE 10ms DC 0.1 Drain Current, I D (A) 1 10 102 103 0 40 80 120 160 200 Drain to Source Voltage, VDS (V) Drain to Source Voltage, VDS (V) Saturation Characteristics 15 12 9 VGS=5.0V 6 3 0 VGS=4.5V VGS=4.0V 0 2 4 6 8 10 PULSE DURATION=80μS DUTY CYCLE = 0.5% MAX Transfer Characteristics 100 Drain to Source Current, IDS (ON) (A) VGS=10V VGS=6.0V VGS=5.5V Drain Current, ID (A) PULSE DURATION=80μS DUTY CYCLE = 0.5% MAX VDS≥50V 10 1 T J = 150℃ T J = 25℃ 0.1 0 2 4 6 8 10 Drain to Source Voltage, VDS (V) Gate to Source Voltage, VSD (V) Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 1.25 2500 2000 1500 1000 500 0 Capacitance vs. Drain to Source Voltage I D=250μA Normalized Drain to Source Breakdown Voltage 1.05 0.95 0.85 0.75 -60 -40 -20 Capacitance, C (pF) 1.15 VGS=0V, f=1MHz CISS=CGS+C GD CRSS=CGD COSS≈C DS+CGD CISS CRSS COSS 0 20 40 60 80 100120 140 160 1 2 5 10 2 5 102 2 5 103 Junction Temperature, T J (℃) Drain to Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-078,A UF740 TYPICAL PERFORMANCE CUVES (Cont.) MOSFET Transconduce vs. Drain Current 15 PULSE DURATION=80μS DUTY CYCLE = 0.5% MAX T J = 25 ℃ 9 6 3 0 0 4 8 12 16 20 Drain Current, ID (A) TJ = 150℃ 100 Source to Drain Diode Voltage PULSE DURATION=80μS DUTY CYCLE = 0.5% MAX 12 Source to Drain Current, ISD (A) Transconductance, g FS (S) 10 T J = 150℃ 1.0 TJ = 25℃ 0.1 0 0.3 0.6 0.9 1.2 1.5 Source to Drain Voltage, VSD (V) Drain to Source on Resistance, R DS (ON) (Ω) Drain to Source on Resistance vs. Voltage and Drain Current 5 4 3 2 VGS=20V 1 0 Gate to Source Voltage vs. Gate Charge 20 Gate to Source Voltage, VGS (V) Pulse Duration =80 μs Duty Cycle = 0.5% Max I D=10A VDS=80V 16 12 8 4 0 0 12 36 24 Gate Charge, Q G (nC) 48 60 VGS =10V VDS=200V VDS=320V 25 10 20 30 Drain Current, I D (A) 40 50 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-078,A