UH8100AG-AE3-R

UNISONIC TECHNOLOGIES CO., LTD UH8100 CMOS IC LOW POWER HALL EFFECT SWITCH  3 DESCRIPTION UH8100 is a low-power integrated Hall switch designed to sense the applied magnetic flux density and give a digital output, which indicates the present condition of the magnitude sensed. It mainly designed for battery-powered system and hand-held equipment, such as cellular flip-phones and PDA’s, in which power consumption is one major concern. The typical power consumption of UH8100 is down to 15uW at 2.75V supply. For UH8100, the output will be high when no magnetic field is applied and be low when the applied magnetic flux density is stronger than the switching threshold. The difference between UH8100A and UH8100B is that UH8100A consumes less power than UH8100B in the Hall sensor operation.  1 2 SOT-23 (EIAJ SC-59) FEATURES * Micro power Operation * 2.5V to 5.5V Battery Operation * Offset Canceling Technology * Superior Temperature Stability * Extremely Low Switch-Point Drift * Insensitive to Physical Stress  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UH8100AL-AE3-R UH8100AG-AE3-R UH8100BL-AE3-R UH8100BG-AE3-R Note: Pin Assignment: I: VDD O: VOUT G: GND  Package SOT-23 SOT-23 Pin Assignment 1 2 3 I O G I O G Packing Tape Reel Tape Reel MARKING UH8100A www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd UH8100B 1 of 4 QW-R502-413.E UH8100 CMOS IC  PIN CONFIGURATIONS  PIN DESCRIPTION PIN NO. PIN NAME PIN TYPE 1 VDD P Power Supply 2 VOUT O Digital Output 3 GND G Ground Note: O=Output, P=Power Supply, G=Ground  PIN DESCRIPTION BLOCK DIAGRAM OUTPUT VDD L o g i c Co n t r o l A MP O f f s et C a n c e l l i n g Hall Plate GND UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R502-413.E UH8100  CMOS IC ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Magnetic Flux Density B Unlimited mT Supply Voltage VDD 7 V Output Current IO 10 mA Package Power Dissipation PD 230 mW Junction Temperature TJ +150 °C Operation Temperature TOPR -40 ~ +85 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  RECOMMENDED OPERATING CONDITIONS (TA=25°C, unless otherwise specified) PARAMETER Supply Voltage  SYMBOL VDD MIN 2.5 TYP MAX 5.5 UNIT V TYP 0.1 0.01 5 280 50 50 200 0.1 25 MAX 0.3 1 10 500 100 100 400 UNIT V uA uA uA us ms us % % ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Output On Voltage Output Leakage Current SYMBOL VOUT IOFF Supply Current IDD(AVG) Awake Time TAWAKE Period TPERIOD Duty Cycle  CONDITIONS Operating D.C. CONDITIONS VDD=3V, IOUT=1mA VDD=3V, VOUT=5.5V, B