UP1753G-AA3-R

UNISONIC TECHNOLOGIES CO., LTD UP1753 NPN SILICON TRANSISTOR HIGH CURRENT LOW VCE(SAT) TRANSISTOR  1 DESCRIPTION TO-252 The UTC UP1753 is specially designed to have high current and low VCE(SAT) to suit for power amplifier application and power switching application.  FEATURES 1 *VCE(SAT) typ is below 300mV at 5A * Max continuous current 6 A * BVCEO is 100V minimum  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UP1753L-AA3-R UP1753G-AA3-R UP1753L-TN3-T UP1753G-TN3-T UP1753L-TN3-R UP1753G- TN3-R  SOT-223 Package SOT-223 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E B C E Packing Tape Reel Tube Tape Reel MARKING INFORMATION PACKAGE MARKING SOT-223 TO-252 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R220-020.D UP1753  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current RATINGS UNIT 200 V 100 V 6 V 10 A 6 A SOT-223 0.8 W Power Dissipation (TA =25°C) PD TO-252 1 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  SYMBOL VCBO VCEO VEBO ICM IC ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current SYMBOL BVCBO BVCEO BVEBO ICBO ICER IEBO TEST CONDITIONS IC=100µA IC=10mA (Note1) IE=100µA VCB=150V VCE=150V, R≤1KΩ VEB=6V IC=0.1A, IB=5mA (Note1) Collector-Emitter Saturation Voltage VCE(SAT) IC=2A, IB=100mA (Note1) IC=5A, IB=500mA (Note1) Base-Emitter Saturation Voltage VBE(SAT) IC=5A, IB=500mA (Note1) Base-Emitter Turn-On Voltage VBE(ON) IC=5A, VCE =2V (Note1) IC=10mA, VCE =2V IC=2A, VCE =2V (Note1) Static Forward Current Transfer Ratio hFE IC=4A, VCE =2V (Note1) IC=10A, VCE =2V (Note1) Transition Frequency fT IC=100mA, VCE =10V f=50MHz Output Capacitance COB VCB=10V, f=1MHz tON IC=1A, VCC =10V Switching Times IB1=IB2=100mA tOFF Note: 1.Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%, UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 200 100 6 TYP 300 120 8 100 100 50 20 200 200 100 100 38 50 1600 MAX UNIT V V V 10 nA 10 nA 10 nA 50 150 mV 330 1250 mV 1100 mV 300 MHz pF ns ns 2 of 4 QW-R220-020.D UP1753  NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Collector-Emitter Saturation Voltage vs. Collector Current DC Current Gain vs. Collector Current 1.6 0.8 1.4 0.6 1.2 IC/IB=10 0.4 VCE=5V 1.0 0.8 IC/IB=50 VCE=1V 0.6 0.4 0.2 0.2 0 0.01 0.1 1 10 100 Collector Current, IC (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 0.01 0.1 1 10 100 Collector Current, IC (A) 3 of 4 QW-R220-020.D UP1753 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R220-020.D