UP3855G-AA3-R

UNISONIC TECHNOLOGIES CO., LTD UP3855 PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR  1 DESCRIPTION SOT-223 The UTC UP3855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it ideal for applications, such as driving and power management functions and DC-DC circuits.  FEATURES 1 SOT-89 * Extremely low saturation voltages * Peak current up to 10A * 4A continuous current  ORDERING INFORMATION Ordering Number Note:  UP3855G-AA3-R UP3855G-AB3-R Pin Assignment: B: Base C: Collector Package SOT-223 SOT-89 E: Emitter Pin Assignment 1 2 3 B C E B C E Packing Tape Reel Tape Reel MARKING SOT-89 UP3855G SOT-223 Date Code 1 www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R225-007.C UP3855  PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current (Note 1) Peak Pulse Current RATINGS UNIT -180 V -140 V -7 V -4 A -10 A 3.0 (Note 1) SOT-223 Power Dissipation PD W 1.6 (Note 2) SOT-89 0.6 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  SYMBOL VCBO VCEO VEBO IC ICM THERMAL RESISTANCE PARAMETER RATINGS UNIT 42 (Note 1) SOT-223 Junction to Ambient θJA °C/W 78 (Note 2) SOT-89 208 Notes: 1. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.  SYMBOL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage VCBO IC=-100μA Collector-Emitter Breakdown Voltage VCER IC=-1μA, RB≤1kΩ Collector-Emitter Breakdown Voltage VCEO IC=-10mA (Note 1) Emitter-Base Breakdown Voltage VEBO IE=-100μA VCB=-150V Collector Cut-Off Current ICBO VCB=-150V, TA=100°C VCB=-150V, Collector Cut-Off Current ICER R≤1kΩ TA=100°C Emitter Cut-Off Current IEBO VEB=-6V IC=-0.1A, IB=-5mA Collector-Emitter Saturation Voltage IC=-0.5A, IB=-50mA VCE(SAT) (Note 1) IC=-1A, IB=-100mA IC=-3A, IB=-300mA Base-Emitter Saturation Voltage VBE(SAT) IC=-3A, IB=-300mA(Note 1) Base-Emitter Turn-On Voltage VBE(ON) IC=-3A, VCE=-5V (Note 1) IC=-10mA, VCE=-5V Static Forward Current Transfer IC=-1A, VCE=-5V hFE Ratio (Note 1) IC=-3A, VCE=-5V IC=-10A, VCE=-5V IC=-100mA, VCE=-10V Transition Frequency fT f=50MHz Output Capacitance (Note 1) COBO VCB=-10V, f=1MHz tON IC=-1A, VCC=-50V, Switching Times IB1=-IB2=-100mA tOFF Note: 1. Measured under pulsed conditions. Pulse width≤300μs; duty cycle≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN -180 -180 -140 -7.0 TYP -200 -200 -160 -8.0