UTCX0202

UTC X0202/A SENSITIVE SCRs DESCRIPTION The X0202/A SCR series is suitable for all applications where the available gate current is limited, such as ground fault circuit interruptors, overvoltage crowbar protection in low power supplies, capacitive ignition circuit,…… SCR 1 2 3 FEATURES: *IT(RMS) : 1.25A *VDRM/VRRM :600/800V 4 SOT-223 1: GATE 2,4: ANODE 3: CATHODE ABSOLUTE MAXIMUM RATINGS (unless otherwise specified ) PARAMETERS Peak Repetitive Forward and Reverse Blocking Voltage (Tj=110°C, RGK=1kΩ) X0202 X0202A RMS On-State Current (Ttab=95°C) 180°C conduction angle Average On-State Current (Ttab=95°C) 180°C conduction angle Non Repetitive Surge Peak on-state Current (tp=8.3ms Tj=25°C) Non Repetitive Surge Peak on-state Current (tp=10ms Tj=25°C) I t Value for fusing (tp=10ms Tj=25°C) Critical Rate Of Rise Of On-state Current IG=2*IGT,tr≤100ns, f=60Hz, Tj=125°C Peak Gate Current (p=20µs Tj=125°C) Average Gate Power Dissipation (Tj=125°C) Storage Junction Temperature Range Operating Junction Temperature Range SYMBOL RATINGS UNIT VDRM, VRRM IT(RMS) IT(AV) ITSM ITSM It dI/dt IGM PG(AV) Tstg Tj 600 800 1.25 0.8 25 22.5 2.5 50 1.2 0.2 -40~150 -40~125 V A A A A A2S A/µs A W °C °C UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R301-006,A UTC X0202/A ELECTRICAL CHARACTERISTICS(Tj=25°C, unless otherwise specified) PARAMETER Peak Forward or Reverse Blocking Current Tj =25°C Tj =125°C Peak Forward On-State Voltage Gate Trigger Current Gate Trigger Voltage Gate Non-Trigger Voltage Holding Current Latch Current Critical Rate of Rise of Off-State Voltage Peak Reversed Gate Voltage Threshold Voltage Dynamic Resistance SCR SYMBOL IDRM, IRRM VTM IGT VGT VGD IH IL dv/dt VRG VTO Rd ITM= 2.5A, tp=380µs VD=12V, RL=140Ω VD=12V, RL=140Ω VD=VDRM, RL=3.3kΩ,RGK=1kΩ, (Tj=125°C) IT=50mA, RGK=1kΩ IG=1mA, RGK=1kΩ VD=67%VDRM, RGK=1kΩ, (Tj=110°C) IRG=10µ A (Tj=125°C) (Tj=125°C) TEST CONDITIONS VDRM=VRRM, RGK=1kΩ MIN TYP MAX 5 500 1.45 200 0.8 UNIT µA µA V µA V V 0.1 5 6 10 8 0.9 200 mA mA V/µs V V mΩ THERMAL CHARACTERISTICS SYMBOL Rth(j-t) Rth(j-a) S=Copper surface under tab PARAMETER Junction to tab Junction to ambient (S=5cm) VALUE 25 60 UNIT °C/W °C/W TYPICAL CHARACTERISTICS CURVE Figure 1.Maximum Average Power Dissipation vs. Average On-stage Current 1.4 1.2 1.0 0.8 0.6 0.6 0.4 360° 0.2 0.0 0.0 IT(av)(A) 0.1 0.2 0.3 0.4 0.5 0.6 α 0.7 0.8 0.9 0.4 0.2 0.0 0 25 Ttab (℃) 50 75 100 125 α=180° Figure 2-1.Average and D.C. On-state Current vs.Lead Temperature D.C. 1.2 1.0 0.8 P(W) IT(av)(A) α=180° UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R301-006,A UTC X0202/A Figure 2-2.Average and D.C. On-state Current vs.Ambient Temperature(Device Mounted On FR4 with Recomended Pad Layout) 1.4 1.2 1.0 α=180° 0.8 0.6 0.4 0.2 0.0 0.1 D.C. 1.0 Figure 3. Relative Variation of Thermal Impedance Junction to Ambient vs.Pulse Duration SCR Tamb(℃) 0 25 50 75 100 125 0.01 1E-2 1E-1 1E+0 tp(s) 1E+1 1E+2 5E+2 1.50 1.25 1.00 0.75 0.50 0.25 Figure 4.Relative Variation of Gate Trigger Current,Holding Current and Latching Current Versus Junction Temperature (typical values). IGT,IH,IL[Tj]/GT,IH,IL[Tj]=25℃ Figure 5.Relative Variation of Holding Current vs.Gate-cathode Resistance (typical values). 4.0 3.5 3.0 IH[Rgk]/IH[Rgk=1kΩ ] Tj=25℃ IH&IL (Rgk=1kΩ ) 2.5 2.0 1.5 IGT 1.0 0.5 Rgk(kΩ ) 1E-1 1E+0 1E+1 0.0 -40 Tj(℃) -20 0 20 40 60 80 100 120 140 0.0 1E-2 10.0 Figure 6.Relative Variation of dV/dt immunity vs.Gate-Cathode Resistance (typical values). dV/dt[Rgk]/dV/dt[Rgk=1kΩ ] Tj=125(℃) VD=0.67*VDRM Figure 7.Relative Variation of dV/dt Immunity vs Gate-cathode Capacitance (typical values). 20 18 16 14 12 dV/dt[Rgk]/dV/dt[Rgk=1kΩ ] Tj=125(℃) VD=0.67*VDRM Rgk=1kΩ ) 1.0 10 8 6 4 2 0 0 2 4 6 8 Rgk(kΩ ) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Cgk(nF) 10 12 14 16 18 20 22 UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R301-006,A UTC X0202/A Figure 8.Surge Peak On-state Current vs.Number of Cycles. 25 ITSM(A) 300 tp=10ms one cycle 15 10 5 0 Tamb=25(℃) Repetitive Number of cycles I2t 10 100 1000 1 0.01 tp(ms) 0.10 1.00 Tjinitial=25(℃) Nonrepetitive 10 100 SCR Figure 9.Non-repetitive Surge Peak on-state Current for a Sinusoidal pulse with width tp