UTT18P10L-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UTT18P10 Power MOSFET 100V, 18A P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT18P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche.  FEATURES * RDS(ON) < 0.20Ω @ VGS=-10V, ID=-18A * High Switching Speed  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT18P10L-TN3-R UTT18P10G-TN3-R UTT18P10L-TA3-T UTT18P10G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source  Package TO-252 TO-220 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-619.E UTT18P10  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -100 V Gate-Source Voltage VGSS ±20 V Continuous, VGSS@-10V ID -18 A TC=25°C Drain Current Pulsed (Note 2) IDM -72 A Avalanche Energy Single Pulsed (Note 3) EAS 40 mJ TO-252 150 Power Dissipation (TC=25°C) PD W TO-220 140 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating; pulse width limited by max. junction temperature 3. VDD=-50V, starting TJ=25°C, L=1mH, RG=25Ω, IAS=-9A. (See Figure 2a, 2b)  THERMAL CHARACTERISTICS PARAMETER SYMBOL TO-252 TO-220 Junction to Case  RATINGS 1.0 1.1 θJC UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS ID=-250µA, VGS=0V VDS=-100V, VGS=0V, VGS=+20V VGS=-20V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA Static Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-18A (Note 2) DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VDS=-25V, VGS=0V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=-80V, VGS=-10V, ID=-18A, Gate to Source Charge QGS See Fig 3 (Note 2) Gate to Drain ("Miller") Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=-50V, ID=-18A, RG=9.1Ω, RD = 2.4Ω, See Fig. 1(Note 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM (Note 1) TJ=25°C, IS=-18A, VGS=0V Drain-Source Diode Forward Voltage VSD (Note 2) Notes: 1. Repetitive rating; pulse width limited by max. junction temperature. 2. Pulse width ≤ 300µs; duty cycle ≤ 2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -100 -1.5 -1 +100 -100 V µA nA nA -2.5 0.20 V Ω 1400 590 140 pF pF pF 61 14 29 nC nC nC ns ns ns ns -18 A -72 A -5.0 V 16 73 34 57 2 of 5 QW-R502-619.E UTT18P10 TEST CIRCUITS AND WAVEFORMS VGS VDS VDS 90% RG D.U.T. RD -10V VDD +  Power MOSFET Pulse Width≤1μs Duty Factor≤0.1% 10% VGS TD(ON) TR TD(OFF) TF Fig. 1a Switching Time Test Circuit Fig. 1b Switching Time Waveforms Fig. 2a Unclampled Inductive Test Circuit Fig. 2b Unclampled Inductive Waveforms Fig.3a Gate Charge Test Circuit Fig. 3b Gate Charge Waveform UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-619.E UTT18P10 TEST CIRCUITS AND WAVEFORMS(Cont.) +  Power MOSFET (Note 1) Driver Gate Drive Period P.W. D= P.W. Period VGS=10V * (Note 2) D.U.T. ISD Waveform Reverse Recovery Current (Note 3) Body Diode Forward Current D.U.T. VDS Waveform Re-Applied Voltage Body Diode di/dt Diode Recovery dv/dt VDD Forward Drop Inductor Curent Ripple≤5 % ISD *** VGS=5V for Logic Level and 3V Drive Devices For N and P Channel Power MOSFET Notes: 1. Repetitive rating; pulse width limited by max. junction temperature. 2. VDD=-25V, starting TJ=25°C, L=2.7mH, RG=25Ω, IAS=-18A. (See Figure 2) 3. ISD≤-18A, di/dt≤200A/µs, VDD≤BVDSS, TJ≤150°C UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-619.E UTT18P10  Power MOSFET TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-619.E