X1049A

UTC X1049A N P N EPITAXIAL SILICON TRANSISTOR HIGH GAIN TRANSISTOR FEATURES *VCEV = 80V *High Gain *20 Amps pulse current APPLICATIONS *LCD Backlight converters *Emergency lighting *DC-DC converters 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature DC Pulse SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg RATINGS 80 25 5 4 20 500 1 -55 ~+200 -55~ +200 UNIT V V V A mA W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current unless otherwise specified). SYMBOL VCBO VCEO VCES VCEV VEBO ICBO IEBO ICES CONDITIONS IC=100µA IC=10mA IC=100µA IC=100µA, VEB=1V IE=100µA VCB=50V VEB=4V VCES=50V MIN 80 25 80 80 5 TYP 120 35 120 120 8.75 0.3 0.3 0.3 MAX UNIT V V V V V nA nA nA 10 10 10 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-061,A UTC X1049A PARAMETER N P N EPITAXIAL SILICON TRANSISTOR SYMBOL VCE(sat) CONDITIONS IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=10mA* IC=4A, IB=50mA* IC=4A, IB=50mA* IC=4A, VCE=2V* MIN TYP 30 60 125 155 890 820 430 450 450 350 180 45 125 380 MAX 70 130 280 400 980 920 UNIT mV mV mV Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage DC Current Gain IC=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=4A, VCE=2V* IC=20A, VCE=2V* IC=50mA, VCE=10V,f=50MHz Transition Frequency fT Output Capacitance VCB=10V, f=1MHz Cobo IC=4A, IB=40mA, VCC=10V Turn - On Time ton IC=4A, IB=±40mA, VCC=10V Turn -Off Time toff *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% VBE(sat) VBE(on) hFE 250 300 300 200 7 1200 60 MHz pF ns ns TYPICAL CHARACTERISTICS VCE(sat) - IC 1.0 0.8 0.6 0.4 0.2 0 1mA +25℃ VCE(sat) - (V) 1.0 Ic/IB=100 0.8 0.6 0.4 0.2 0 1mA -55℃ +25℃ +100℃ +175℃ VCE(sat) - IC VCE(sat) - (V) Ic/IB=10 Ic/IB=50 Ic/IB=100 Ic/IB=200 10mA 100mA 1A 10A 100A 10mA 100mA 1A 10A 100A IC-Collector Current IC-Collector Current hFE - IC 700 VCE=2V hFE-Typical Gain 600 500 400 300 200 100 0 1mA 10mA 100mA 1A 10A 100A -55℃ +100℃ +25℃ 1.4 Ic/IB=100 -55℃ 1.2 +25℃ 1.0 +100℃ +175℃ 0.8 0.6 0.4 0.2 0 1mA 10mA VBE(sat) - IC 100mA 1A 10A 100A IC-Collector Current IC-Collector Current UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R201-061,A UTC X1049A VBE(on) - IC 1.4 VCE=2V -55℃ +25℃ 1.0 +100℃ +175℃ 0.8 1.2 0.6 0.4 0.2 0 1mA 10mA 100mA N P N EPITAXIAL SILICON TRANSISTOR Safe Operating Area 100 IC-Collector Current(A) 10 1.0 0.1 DC 1s 100ms 10ms 1ms 100μs 1V 10V 100V 1A 10A 100A 0.01 0.1V IC-Collector Current VCE-Collector Emitter Voltage(V) PD-Ta 1.0 Power Dissipation-(W) Transient Thermal Resistance 180 Transiant Thermal Resistance(C/W) 160 140 120 100 80 60 40 20 0 0.1ms 1ms 10ms 100ms 1s D=0.5 D=1(D,C) 0.75 0.50 D=0.2 D=0.1 D=0.05 Single Pulse 0.25 0.00 -40 0 40 80 120 160 200 100s Ambient Temperature ( ℃ ) 10s Pulse Width UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R201-061,A