1N4148W-V-G

1N4148W-V-G Vishay Semiconductors Small Signal Fast Switching Diode Features • • • • Silicon epitaxial planar diode Fast switching diode AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Mechanical Data Case: SOD-123 Weight: approx. 9.4 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box 17431 Parts Table Part 1N4148W-V-G Ordering code 1N4148W-V-G-18 or 1N4148W-V-G-08 Marking AH Remarks Tape and reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Repetitive peak reverse voltage Average rectified current half wave rectification with resistive load Surge forward current Power dissipation Note: 1) Valid provided that electrodes are kept at ambient temperature. f ≥ 50 Hz t < 1 s and Tj = 25 °C Test condition Symbol VR VRRM IF(AV) IFSM Ptot Value 75 100 150 1) Unit V V mA mA mW 500 350 1) Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature Note: 1) Valid provided that electrodes are kept at ambient temperature. Test condition Symbol RthJA Tj Tstg Value 357 1) Unit K/W °C °C 150 - 65 to + 150 ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number 81139 Rev. 1.1, 17-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 1N4148W-V-G Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Test condition IF = 10 mA IF = 100 mA V R = 20 V Leakage current V R = 75 V VR = 100 V VR = 20 V, TJ = 150 °C Diode capacitance Voltage rise when switching ON (tested with 50 mA pulses) Reverse recovery time VF = VR = 0 V Tested with 50 mA pulses, tp = 0.1 µs, rise time < 30 ns, fp = (5 to 100) kHz IF = 10 mA, IR = 1 mA, VR = 6 V, RL = 100 Ω Symbol VF VF IR IR IR IR CD Vfr Min. Typ. Max. 1000 1200 25 5 100 50 4 2.5 Unit mV mV nA µA µA µA pF V trr 4 ns Typical Characteristics Tamb = 25 °C, unless otherwise specified 103 500 450 Ptot - Power Dissipation (mW) 102 Tj = 100 °C Tj = 25 °C 400 350 300 250 200 150 100 50 0 0 50 100 Tamb - Ambient Temperature (°C) 150 IF (mA) 10 1 10-1 10-2 0 17437 1 VF (V) 2 20809 Figure 1. Forward characteristics Figure 3. Admissible Power Dissipation vs. Ambient Temperature 104 5 2 Tj = 25 °C f = 1 kHz 1.1 Tj = 25 °C f = 1 MHz 103 5 1.0 R f (Ω ) 102 5 2 CD (0 V) CD (VR) 2 0.9 10 5 2 0.8 0.7 10-2 10-1 1 10 102 17440 0 2 4 6 8 10 17438 IF (mA) VR (V) Figure 2. Dynamic Forward Resistance vs. Forward Current Figure 4. Relative Capacitance vs. Reverse Voltage www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 81139 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.1, 17-Aug-10 1N4148W-V-G Vishay Semiconductors 104 5 2 100 5 4 3 2 I n = tP/T IFRM tP T T = 1/fP 103 5 2 10 IFRM (A) n=0 0.1 0.2 0.5 IR (nA) 102 5 2 5 4 3 2 t 1 VR = 20 V 5 4 3 2 10 5 2 1 0 17441 100 200 0.1 10-5 17442 2 5 10-4 2 5 10-3 2 5 10-2 2 5 10-1 2 5 1 2 5 10 Tj (°C) tP (s) Figure 5. Leakage Current vs. Junction Temperature Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration Package Dimensions in millimeters (inches): SOD-123 0.1 (0.004) max. 1.35 (0.053) 8° 0.45 (0.018) 0.25 (0.010) 0.5 (0.020) ref. Cathode bar 2.85 (0.112) 2.55 (0.100) 0.15 (0.006) 0.10 (0.004) 1 (0.039) 0.2 (0.008) 0° to Mounting Pad Layout 0.85 (0.033) 0.85 (0.033) 0.45 (0.018) 0.65 (0.026) 3.85 (0.152) 3.55 (0.140) 1.40 (0.055) 1.7 (0.067) 2.5 (0.098) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Document Number 81139 Rev. 1.1, 17-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 0.85 (0.033) www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000