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1N4734A

1N4734A

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    1N4734A - Zener Diodes - Vishay Siliconix

  • 数据手册
  • 价格&库存
1N4734A 数据手册
1N4728A to 1N4764A Vishay Semiconductors Zener Diodes Features • Silicon Planar Power Zener Diodes • For use in stabilizing and clipping circuits e2 with high power rating • Standard Zener voltage tolerance is ± 5 % • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 17173 Applications • Voltage stabilization Mechanical Data Case: DO-41 Glass case Weight: approx. 310 mg Packaging Codes/Options: TR / 5 k per 13" reel, 25 k/box TAP / 5 k per Ammo pack (52 mm tape), 25 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Power dissipation Z-current 1) Test condition Symbol Ptot IZ Value 1.31) PV/VZ Unit W mA Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature. Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance juntion to ambient air Junction temperature Storage temperature range 1) Test condition Symbol RthJA Tj Tstg Value 1101) 175 - 65 to + 175 Unit K/W °C °C Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature. Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Test condition IF = 200 mA Symbol VF Min Typ. Max 1.2 Unit V Document Number 85816 Rev. 1.8, 22-Feb-06 www.vishay.com 1 1N4728A to 1N4764A Vishay Semiconductors Electrical Characteristics 1N4728A...1N4764A Partnumber Nominal Zener Voltage1) VZ at IZT V 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A 1N4736A 1N4737A 1N4738A 1N4739A 1N4740A 1N4741A 1N4742A 1N4743A 1N4744A 1N4745A 1N4746A 1N4747A 1N4748A 1N4749A 1N4750A 1N4751A 1N4752A 1N4753A 1N4754A 1N4755A 1N4756A 1N4757A 1N4758A 1N4759A 1N4760A 1N4761A 1N4762A 1N4763A 1N4764A 1) Test Current IZT mA 76 69 64 58 53 49 45 41 37 34 31 28 25 23 21 19 17 15.5 14 12.5 11.5 10.5 9.5 8.5 7.5 7 6.5 6 5.5 5 4.5 4 3.7 3.3 3.0 2.8 2.5 Maximum Dynamic Impedance Maximum Reverse Leakage Current IR µA 100 100 50 10 10 10 10 10 10 10 10 10 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Test Voltage VR V 1 1 1 1 1 1 2 3 4 5 6 7 7.6 8.4 9.1 9.9 11.4 12.2 13.7 15.2 16.7 18.2 20.6 22.8 25.1 27.4 29.7 32.7 35.8 38.8 42.6 47.1 51.7 56 62.2 69.2 76.0 Surge Current3) at TA = 25 °C IR mA 1380 1260 1190 1070 970 890 810 730 660 605 550 500 454 414 380 344 304 285 250 225 205 190 170 150 135 125 115 110 95 90 80 70 65 60 55 50 45 Maximum Regulator Current2) IZM mA 276 252 234 217 193 178 162 146 133 121 110 100 91 83 76 69 61 57 50 45 41 38 34 30 27 25 23 22 19 18 16 14 13 12 11 10 9 ZZT at IZT Ω 10 10 9 9 8 7 5 2 3.5 4 4.5 5 7 8 9 10 14 16 20 22 23 25 35 40 45 50 60 70 80 95 110 125 150 175 200 250 350 ZZK at IZK Ω 400 400 400 400 500 550 600 700 700 700 700 700 700 700 700 700 700 700 750 750 750 750 750 1000 1000 1000 1000 1500 1500 1500 2000 2000 2000 2000 3000 3000 3000 IZK mA 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 Based on dc-measurement at thermal equilibrium while maintaining the lead temperature (TL) at 30 °C + 1 °C, 9.5 mm (3/8") from the diode body. Valid provided that electrodes at a distance of 4 mm from case are kept at ambient temperature. TP = 10 ms. 2) 3) www.vishay.com 2 Document Number 85816 Rev. 1.8, 22-Feb-06 1N4728A to 1N4764A Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified W 1.0 0.8 Pot t 0.6 0.4 0.2 0.2 18481 0 100 T 200 °C amb Figure 1. Admissible Power Dissipation vs. Ambient Temperature Package Dimensions in mm (Inches) Cathode Identification ∅ 0.86 (0.03) max. ISO Method E 94 9368 ∅ 2.6 (0.10) max. Standard Glass Case 54 B 2 DIN 41880 JEDEC DO 41 26 (1.02) min. 4.1 (0.16) max. 26 (1.02) min. Document Number 85816 Rev. 1.8, 22-Feb-06 www.vishay.com 3 1N4728A to 1N4764A Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 85816 Rev. 1.8, 22-Feb-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
1N4734A 价格&库存

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1N4734APF
  •  国内价格
  • 1+0.1246
  • 30+0.12015
  • 100+0.1157
  • 500+0.1068
  • 1000+0.10235
  • 2000+0.09968

库存:2270

1N4734ATA
  •  国内价格
  • 10+0.2496
  • 50+0.23088
  • 200+0.21528
  • 600+0.19968
  • 1500+0.1872
  • 3000+0.1794

库存:1280

1N4734A,113

    库存:0