1N5261B

1N5221B...1N5267B Vishay Telefunken Silicon Z–Diodes Features D D D D Very sharp reverse characteristic Very high stability Low reverse current level VZ–tolerance ± 5% Applications 94 9367 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions TL 75°C x Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 200 –65...+200 Unit mW mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=9.5mm (3/8”), TL=constant Symbol RthJA Value 300 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.1 Unit V Document Number 85588 Rev. 2, 06-Aug-99 www.vishay.de • FaxBack +1-408-970-5600 1 (4) 1N5221B...1N5267B Vishay Telefunken Type 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 1N5236B 1N5237B 1N5238B 1N5239B 1N5240B 1N5241B 1N5242B 1N5243B 1N5244B 1N5245B 1N5246B 1N5247B 1N5248B 1N5249B 1N5250B 1N5251B 1N5252B 1N5253B 1N5254B 1N5255B 1N5256B 1N5257B 1N5258B 1N5259B 1N5260B 1N5261B 1N5262B 1N5263B 1N5264B 1N5265B 1N5266B 1N5267B VZnom 1) V 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56 60 62 68 75 IZT mA 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9.0 8.5 7.8 7.4 7.0 6.6 6.2 5.6 5.2 5.0 4.6 4.5 4.2 3.8 3.4 3.2 3.0 2.7 2.5 2.2 2.1 2.0 1.8 1.7 for rzjT rzjk at IZK mA 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 IR at mA < 100 < 100 < 75 < 75 < 50 < 25 < 15 < 10