1N6383

ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB® Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Find out more about Vishay’s Automotive Grade Product requirements at: www.vishay.com/applications TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial and telecommunication. MECHANICAL DATA Case: Molded epoxy body over passivated junction Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: For uni-directional types the color band denotes cathode end, no marking on bi-directional types Case Style 1.5KE PRIMARY CHARACTERISTICS VWM PPPM PD IFSM TJ max. 5.0 V to 18 V 1500 W 6.5 W 200 A 175 °C DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional types, use C suffix (e.g. ICTE18C). Electrical characteristics apply in both directions. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1) Peak pulse current with a 10/1000 μs waveform (1) (fig. 3) SYMBOL PPPM IPPM PD IFSM VF TJ, TSTG LIMIT 1500 See next table 6.5 200 3.5 - 55 to + 175 UNIT W A W A V °C Power dissipation on infinite heatsink at TL = 75 °C (fig. 8) Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) Maximum instantaneous forward voltage at 100 A for uni-directional only Operating junction and storage temperature range Notes (1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2 (2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum Document Number: 88356 Revision: 07-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (JEDEC REGISTERED DATA) (TA = 25 °C unless otherwise noted) JEDEC TYPE NUMBER GENERAL SEMICONDUCTOR PART NUMBER STAND-OFF VOLTAGE VWM (V) MINIMUM BREAKDOWN VOLTAGE AT 1.0 mA VBR (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) MAXIMUM CLAMPING VOLTAGE AT IPP = 1.0 A VC (V) MAXIMUM CLAMPING VOLTAGE AT IPP = 10 A VC (V) MAXIMUM PEAK PULSE CURRENT IPP (A) UNI-DIRECTIONAL TYPES 1N6373 (2) 1N6374 1N6375 1N6376 1N6377 1N6378 ICTE5 (2) ICTE8 ICTE10 ICTE12 ICTE15 ICTE18 5.0 8.0 10.0 12.0 15.0 18.0 6.0 9.4 11.7 14.1 17.6 21.2 300 25.0 2.0 2.0 2.0 2.0 7.1 11.3 13.7 16.1 20.1 24.2 7.5 11.5 14.1 16.5 20.6 25.2 160 100 90 70 60 50 BI-DIRECTIONAL TYPES 1N6382 1N6383 1N6384 1N6385 1N6386 Notes (1) (2) (3) ICTE8C ICTE10C ICTE12C ICTE15C ICTE18C 8.0 10.0 12.0 15.0 18.0 9.4 11.7 14.1 17.6 21.2 50.0 2.0 2.0 2.0 2.0 11.4 14.1 16.7 20.8 24.8 11.6 14.5 17.1 21.4 25.5 100 90 70 60 50 “C” suffix indicates bi-directional ICTE5 and 1N6373 are not available as bi-directional Clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; clamping factor: the ratio of the actual VC (clamping voltage) to the VBR (breakdown voltage) as measured on a specific device ORDERING INFORMATION (Example) PREFERRED P/N ICTE5-E3/54 ICTE5HE3/54 (1) Note (1) UNIT WEIGHT (g) 0.968 0.968 PREFERRED PACKAGE CODE 54 54 BASE QUANTITY 1400 1400 DELIVERY MODE 13" diameter paper tape and reel 13" diameter paper tape and reel Automotive grade www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 88356 Revision: 07-May-10 ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 100 000 PPPM - Peak Pulse Power (kW) CJ - Junction Capacitance (pF) Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C 10 Measured at Zero Bias 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1 1000 Measured at Stand-Off Voltage VWM 0.1 0.1 μs 1.0 μs 10 μs 100 μs 1.0 ms 10 ms 100 1.0 10 100 200 td - Pulse Width (s) VBR - Breakdown Voltage (V) Figure 1. Peak Pulse Power Rating Curve Figure 4. Typical Junction Capacitance Uni-Directional Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % 100 100 000 75 CJ - Junction Capacitance (pF) Measured at Zero Bias Bi-Directional Type 10 000 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C 50 1000 25 Measured at Stand-Off Voltage VWM 100 1.0 10 100 200 0 0 25 50 75 100 125 150 175 200 TJ - Initial Temperature (°C) VBR - Breakdown Voltage (V) Figure 2. Pulse Power or Current vs. Initial Junction Temperature Figure 5. Typical Junction Capacitance IFSM - Peak Forward Surge Current (A) 150 IPPM - Peak Pulse Current, % IRSM tr = 10 μs Peak Value IPPM TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM 200 TJ = TJ max. 8.3 ms Single Half Sine-Wave 100 100 Half Value - IPP IPPM 2 50 10/1000 μs Waveform as defined by R.E.A. td 0 0 1.0 2.0 3.0 4.0 50 10 1 5 10 50 100 t - Time (ms) Number of Cycles at 60 Hz Figure 3. Pulse Waveform Figure 6. Maximum Non-Repetitive Forward Surge Current Uni-Directional Only Document Number: 88356 Revision: 07-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor 50 Uni-Directional Only TA = 25 °C 8.0 7.0 IPP - Peak Pulse Current (A) PD - Power Dissipation (W) 6.0 5.0 4.0 3.0 2.0 1.0 L = 0.375" (9.5 mm) Lead Lengths 10 ICTE10 ICTE12 ICTE15 ICTE18 ICTE5 ICTE8 1 6 8 10 12 14 16 18 20 22 24 26 28 0 0 25 50 75 100 125 150 175 200 VC - Clamping Voltage (V) TL - Lead Temperature (°C) Figure 7. Typical Characteristics Clamping Voltage Figure 8. Power Derating Curve PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style 1.5KE 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.042 (1.07) 0.038 (0.96) DIA. www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 88356 Revision: 07-May-10 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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