25RIA40MS90

25RIA Series Vishay High Power Products Medium Power Thyristors (Stud Version), 25 A FEATURES • Improved glass passivation for high reliability and exceptional stability at high temperature • High dI/dt and dV/dt capabilities • Standard package • Low thermal resistance • Metric threads version available • Types up to 1200 V VDRM/VRRM TO-208AA (TO-48) RoHS COMPLIANT • RoHS compliant • Designed and qualified for industrial and consumer level TYPICAL APPLICATIONS PRODUCT SUMMARY IT(AV) 25 A • Medium power switching • Phase control applications • Can be supplied to meet stringent military, aerospace and other high reliability requirements MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ Typical TEST CONDITIONS VALUES 25 TC 85 40 420 A 440 867 790 100 to 1200 110 - 65 to 125 V µs °C A2 s UNITS A °C A I2 t Document Number: 93701 Revision: 19-Sep-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 25RIA Series Vishay High Power Products Medium Power Thyristors (Stud Version), 25 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 10 20 40 25RIA 60 80 100 120 VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE (1) V 100 200 400 600 800 1000 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE (2) V 150 300 500 700 900 1100 1300 10 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 20 Notes (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs (2) For voltage pulses with t ≤ 5 ms p ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Latching current I 2 √t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied Sinusoidal half wave, initial TJ = TJ maximum TEST CONDITIONS 180° sinusoidal conduction VALUES 25 85 40 420 440 350 370 867 790 615 560 8670 0.99 1.40 10.1 mΩ 5.7 1.70 130 200 V mA A 2 √s A2s A UNITS A °C A t = 0.1 to 10 ms, no voltage reapplied, TJ = TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum Ipk = 79 A, TJ = 25 °C TJ = 25 °C, anode supply 6 V, resistive load V www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93701 Revision: 19-Sep-08 25RIA Series Medium Power Thyristors Vishay High Power Products (Stud Version), 25 A SWITCHING PARAMETER VDRM ≤ 600 V Maximum rate of rise of turned-on current VDRM ≤ 800 V VDRM ≤ 1000 V VDRM ≤ 1600 V Typical turn-on time Typical reverse recovery time tgt trr dI/dt TJ = TJ maximum, VDM = Rated VDRM Gate pulse = 20 V, 15 Ω, tp = 6 µs, tr = 0.1 µs maximum ITM = (2 x rated dI/dt) A TJ = 25 °C, at rated VDRM/VRRM, TJ = 125 °C TJ = TJ maximum, ITM = IT(AV), tp > 200 µs, dI/dt = - 10 A/µs TJ = TJ maximum, ITM = IT(AV), tp > 200 µs, VR = 100 V, dI/dt = - 10 A/µs, dV/dt = 20 V/µs linear to 67 % VDRM, gate bias 0 V to 100 W SYMBOL TEST CONDITIONS VALUES 200 180 160 150 0.9 4 A/µs UNITS µs Typical turn-off time tq 110 Note • tq = 10 µs up to 600 V, tq = 30 µs up to 1600 V available on special request BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage SYMBOL dV/dt TEST CONDITIONS TJ = TJ maximum linear to 100 % rated VDRM TJ = TJ maximum linear to 67 % rated VDRM VALUES 100 300 (1) UNITS V/µs (1) Note Available with: dV/dt = 1000 V/µs, to complete code add S90 i.e. 25RIA120S90 TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM -VGM TEST CONDITIONS TJ = TJ maximum TJ = TJ maximum TJ = TJ maximum TJ = - 65 °C DC gate current required to trigger IGT TJ = 25 °C TJ = 125 °C TJ = - 65 °C DC gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C DC gate current not to trigger IGD TJ = TJ maximum, VDRM = Rated value Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Maximum required gate trigger current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied VALUES 8.0 2.0 1.5 10 90 60 35 3.0 2.0 1.0 2.0 mA V mA UNITS W A V DC gate voltage not to trigger VGD TJ = TJ maximum, VDRM = Rated value 0.2 V Document Number: 93701 Revision: 19-Sep-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 25RIA Series Vishay High Power Products Medium Power Thyristors (Stud Version), 25 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Non-lubricated threads Allowable mounting torque Lubricated threads Approximate weight Case style See dimensions - link at the end of datasheet TEST CONDITIONS VALUES - 65 to 125 0.75 K/W 0.35 3.4 + 0 - 10 % (30) 23 + 0 - 10 % (20) 14 0.49 UNITS °C N·m (lbf ⋅ in) g oz. TO-208AA (TO-48) ΔRthJC CONDUCTION CONDUCTION ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION 0.17 0.21 0.27 0.40 0.69 RECTANGULAR CONDUCTION 0.13 0.22 0.30 0.42 0.70 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 130 25RIA Series RthJC (DC) = 0.75 K/W 120 130 25RIA Series R thJC (DC) = 0.75 K/W 120 110 Conduction Angle 110 Conduction Period 100 30° 60° 90° 120° 180° 100 30° 60° 90° 120° 90 90 180° DC 80 0 5 10 15 20 25 30 Average On-state Current (A) 80 0 10 20 30 40 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 93701 Revision: 19-Sep-08 25RIA Series Medium Power Thyristors Vishay High Power Products (Stud Version), 25 A 45 40 35 30 25 20 15 10 5 0 0 5 10 15 20 25 0 30 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient Temperature (°C) Conduction Angle Maximum Average On-state Power Loss (W) 180° 120° 90° 60° 30° RMS Limit hS Rt 2 A K/ W =1 W K/ 3K /W a elt -D R 4K /W 5K /W 7K /W 25RIA Series TJ = 125°C Fig. 3 - On-State Power Loss Characteristics Maximum Average On-state Power Loss (W) 60 55 50 45 40 35 30 25 RMS Limit 20 15 10 5 0 0 5 10 15 20 25 30 35 0 40 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient Temperature (°C) Conduction Period DC 180° 120° 90° 60° 30° 2K /W 3K /W 4K /W 5K /W 7 K/W R SA th = 1 W K/ ta el -D R 25RIA Series TJ = 125°C Fig. 4 - On-State Power Loss Characteristics 375 Peak Half Sine Wave On-state Current (A) 350 325 300 275 250 225 200 175 1 Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T = 125°C J @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 450 425 400 375 350 325 300 275 250 225 200 175 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T = 125°C J No Voltage Reapplied Rated V Reapplied RRM 25RIA Series 25RIA Series 10 100 150 0.01 0.1 Pulse Train Duration (s) 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 93701 Revision: 19-Sep-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 25RIA Series Vishay High Power Products Medium Power Thyristors (Stud Version), 25 A 1000 Instantaneous On-state Current (A) 25RIA Series 100 10 TJ = 25°C TJ = 125°C 1 0.5 1 1.5 2 2.5 Instantaneous On-state Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Transient Thermal Impedance Z thJC (K/W) 1 Steady State Value R thJC = 0.75 K/W (DC Operation) 0.1 25RIA Series 0.01 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 8 - Thermal Impedance ZthJC Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 10V, 20ohms tr = 6 µs b) Recommended load line for