2N5196

2N5196/5197/5198/5199 Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY Part Number 2N5196 2N5197 2N5198 2N5199 VGS(off) (V) –0.7 to –4 –0.7 to –4 –0.7 to –4 –0.7 to –4 V(BR)GSS Min (V) –50 –50 –50 –50 gfs Min (mS) 1 1 1 1 IG Max (pA) –15 –15 –15 –15 jVGS1 – VGS2j Max (mV) 5 5 10 15 FEATURES D D D D D D Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 5 pA Low Noise High CMRR: 100 dB BENEFITS D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal APPLICATIONS D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High Speed Comparators D Impedance Converters DESCRIPTION The 2N5196/5197/5198/5199 JFET duals are designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VDG = 20 V. The hermetically-sealed TO-71 package is available with full military processing (see Military Information and the 2N5545/5546/5547JANTX/JANTXV data sheet). For similar products see the low-noise U/SST401 series, the high-gain 2N5911/5912, and the low-leakage U421/423 data sheets. TO-71 S1 1 D1 6 G2 2 5 D2 3 G1 Top View 4 S2 ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Document Number: 70252 S-04031—Rev. D, 04-Jun-01 Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2 mW/_C above 85_C b. Derate 4 mW/_C above 85_C www.vishay.com 8-1 2N5196/5197/5198/5199 Vishay Siliconix SPECIFICATIONS FOR 2N5196 AND 2N5197 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N5196 2N5197 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Symbol Test Conditions IG = –1 mA, VDS = 0 V VDS = 20 V, ID = 1 nA VDS = 20 V, VGS = 0 V VGS = –30 V, VDS = 0 V TA = 150_C VDG = 20 V, ID = 200 mA TA = 125_C VDG = 20 V, ID = 200 mA Typa Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG VGS –57 –2 3 –10 –20 –5 –0.8 –50 –0.7 0.7 –4 –50 –0.7 0.7 –4 V mA pA nA pA nA V 7 –25 –50 –15 –15 7 –25 –50 –15 –15 Gate Operating Current Gate-Source Voltage –1.5 –0.2 –3.8 –0.2 –3.8 Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Noise Figure gfs gos gfs gos Ciss Crss en NF 2.5 VDS = 20 V, VGS = 0 V f = 1 kHz 2 0.8 1 3 VDS = 20 V, VGS = 0 V f = 1 MHz 1 9 0.7 1 4 50 1.6 4 6 2 20 0.5 0.7 1 4 50 1.6 4 6 pF 2 20 0.5 nV⁄ √Hz dB mS mS mS mS VDS = 20 V, ID = 200 mA f = 1 kHz VDS = 20 V, VGS = 0 V, f = 1 kHz VDS = 20 V, VGS = 0 V f = 100 Hz, RG = 10 MW Matching Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature |V GS1–V GS2| D|V GS1–V GS2| DT I DSS1 I DSS2 gfs1 gfs2 |g os1–g os2| |I G1–I G2| CMRR VDG = 20 V, ID = 200 mA , TA = 125_C VDG = 10 to 20 V, ID = 200 mA VDG = 20 V, ID = 200 mA VDG = 20 V, ID = 200 mA TA = –55 to 125_C VDS = 20 V, VGS = 0 V 0.98 0.95 5 5 5 10 mV mV/_C Saturation Drain Current Ratio 1 0.95 1 Transconductance Ratio 0.99 VDS = 20 V, ID = 200 mA f = 1 kHz 0.1 0.97 1 0.97 1 mS Differential Output Conductance 1 1 Differential Gate Current Common Mode Rejection Ratioc 0.1 100 5 5 nA dB www.vishay.com 8-2 Document Number: 70252 S-04031—Rev. D, 04-Jun-01 2N5196/5197/5198/5199 Vishay Siliconix SPECIFICATIONS FOR 2N5198 AND 2N5199 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N5198 2N5199 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Symbol Test Conditions IG = –1 mA, VDS = 0 V VDS = 20 V, ID = 1 nA VDS = 20 V, VGS = 0 V VGS = –30 V, VDS = 0 V TA = 150_C VDG = 20 V, ID = 200 mA TA =125_C VDG = 20 V, ID = 200 mA Typa Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG VGS –57 –2 3 –10 –20 –5 –0.8 –50 –0.7 0.7 –4 –50 –0.7 0.7 –4 V mA pA nA pA nA V 7 –25 –50 –15 –15 7 –25 –50 –15 –15 Gate Operating Current Gate-Source Voltage –1.5 –0.2 –3.8 –0.2 –3.8 Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Noise Figure gfs VDS = 20 V, VGS = 0 V, f = 1 kHz gos gfs gos Ciss Crss en NF VDS = 20 V, VGS = 0 V, f = 1 MHz 2 0.8 1 3 1 9 0.7 50 1.6 4 6 2 20 0.5 0.7 50 1.6 4 6 2 20 0.5 pF nV⁄ √Hz dB 2.5 1 4 1 4 mS mS mS mS VDS = 20 V, ID = 200 mA f = 1 kHz VDS = 20 V, VGS = 0 V, f = 1 kHz VDS = 20 V, VGS = 0 V f = 100 Hz, RG = 10 MW Matching Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature |V GS1–V GS2| D|V GS1–V GS2| DT I DSS1 I DSS2 gfs1 gfs2 |g os1–g os2| |I G1–I G2| CMRR VDG = 20 V, ID = 200 mA , TA = 125_C VDG = 10 to 20 V, ID = 200 mA VDG = 20 V, ID = 200 mA VDG = 20 V, ID = 200 mA TA = –55 to 125_C VDS = 20 V, VGS = 0 V 0.97 0.95 10 20 15 40 mV mV/_C Saturation Drain Current Ratio 1 0.95 1 Transconductance Ratio 0.97 VDS = 20 V, ID = 200 mA f = 1 kHz 0.2 0.95 1 0.95 1 mS Differential Output Conductance 1 1 Differential Gate Current Common Mode Rejection Ratioc 0.1 97 5 5 nA dB NQP Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC. Document Number: 70252 S-04031—Rev. D, 04-Jun-01 www.vishay.com 8-3 2N5196/5197/5198/5199 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 5 3 gfs – Forward Transconductance (mS) 100 nA IG @ ID = 200 mA 10 nA TA = 125_C IG – Gate Leakage 1 nA IGSS @ 125_C 100 pA 200 mA 50 mA 50 mA Gate Leakage Current IDSS – Saturation Drain Current (mA) 4 gfs 3 IDSS 2.6 2.2 2 1.8 10 pA TA = 25_C 1 pA IGSS @ 25_C 1 IDSS @ VDS = 15 V, VGS = 0 V gfs @ VDG = 15 V, VGS = 0 V f = 1 kHz 1.4 0 0 –1 –2 –3 –4 –5 1 0.1 pA 0 10 20 30 40 50 VDG – Drain-Gate Voltage (V) VGS(off) – Gate-Source Cutoff Voltage (V) Output Characteristics 5 VGS(off) = –2 V 4 ID – Drain Current (mA) ID – Drain Current (mA) 4 5 Output Characteristics VGS(off) = –3 V VGS = 0 V –0.3 V –0.6 V 3 –0.9 V 2 –1.2 V –1.5 V 1 –1.8 V –2.1 V 0 20 0 4 8 12 –2.4 V 16 3 VGS = 0 V –0.2 V 2 –0.4 V –0.6 V 1 –0.8 V –1.0 V –1.2 V 0 0 4 8 12 –1.4 V 16 20 VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V) Output Characteristics 2 VGS(off) = –2 V 1.6 ID – Drain Current (mA) VGS = 0 V –0.2 V –0.4 V 1.2 –0.6 V –0.8 V 0.8 –1.0 V 0.4 –1.2 V –1.4 V 0 0 0.2 0.4 0.6 –1.6 V 0.8 0 1 0 0.2 ID – Drain Current (mA) 2.0 2.5 Output Characteristics VGS(off) = –3 V VGS = 0 V –0.3 V –0.6 V –0.9 V 1.5 –1.2 V 1.0 –1.5 V –1.8 V 0.5 –2.1 V –2.4 V 0.4 0.6 0.8 1 VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V) www.vishay.com 8-4 Document Number: 70252 S-04031—Rev. D, 04-Jun-01 2N5196/5197/5198/5199 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transfer Characteristics 5 VGS(off) = –2 V 4 ID – Drain Current (mA) (mV) VDS = 20 V 100 VDG = 20 V TA = 25_C Gate-Source Differential Voltage vs. Drain Current 3 TA = –55_C 25_C VGS1 – VGS2 2N5199 10 2N5196 2 1 125_C 0 0 –0.5 –1.0 –1.5 –2.0 VGS – Gate-Source Voltage (V) –2.5 1 0.01 0.1 ID – Drain Current (mA) 1 Voltage Differential with Temperature vs. Drain Current 100 VDG = 20 V DTA = 25 to 125_C DTA = –55 to 25_C 130 Common Mode Rejection Ratio vs. Drain Current DVDG DV GS1 – VGS2 ( m V/ _ C ) CMRR = 20 log 120 CMRR (dB) 2N5199 10 110 DVDG = 10 – 20 V 100 5 – 10 V 90 VGS1 – VGS2 Dt 2N5196 D 1 0.01 80 0.1 ID – Drain Current (mA) 1 0.01 0.1 ID – Drain Current (mA) 1 Circuit Voltage Gain vs. Drain Current rDS(on) – Drain-Source On-Resistance ( Ω ) 100 1k On-Resistance vs. Drain Current 80 AV – Voltage Gain 800 60 VGS(off) = –3 V VGS(off) = –2 V 40 AV + 20 g fs R L 1 ) R Lg os 600 VGS(off) = –2 V 400 VGS(off) = –3 V Assume VDD = 15 V, VDS = 5 V 10 V RL + ID 200 0 0.01 0 0.1 ID – Drain Current (mA) 1 0.01 0.1 ID – Drain Current (mA) 1 Document Number: 70252 S-04031—Rev. D, 04-Jun-01 www.vishay.com 8-5 2N5196/5197/5198/5199 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage 10 C rss – Reverse Feedback Capacitance (pF) f = 1 MHz 8 5 f = 1 MHz 4 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage C iss – Input Capacitance (pF) 6 VDS = 0 V 4 5V 15 V 2 20 V 0 0 –4 –8 –12 –16 VGS – Gate-Source Voltage (V) –20 3 VDS = 0 V 5V 2 15 V 1 20 V 0 0 –4 –8 –12 –16 VGS – Gate-Source Voltage (V) –20 Equivalent Input Noise Voltage vs. Frequency 20 VDS = 20 V gos – Output Conductance (µS) 16 Hz ID @ 200 mA 12 2.0 2.5 Output Conductance vs. Drain Current VGS(off) = –2 V VDS = 20 V f = 1 kHz TA = –55_C 1.5 en – Noise Voltage nV / 8 VGS = 0 V 1.0 25_C 4 0.5 125_C 0 10 100 1k f – Frequency (Hz) 10 k 100 k 0 0.01 0.1 ID – Drain Current (mA) 1 Common-Source Forward Transconductance vs. Drain Current 2.5 gfs – Forward Transconductance (mS) VGS(off) = –2 V 2.0 TA = –55_C 1.5 25_C 1.0 VDS = 20 V f = 1 kHz rDS(on) – Drain-Source On-Resistance ( Ω ) 1k On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 10 g os – Output Conductance ( mS) 800 gos 8 600 6 400 rDS 4 0.5 125_C 200 rDS @ ID = 100 mA, VGS = 0 V gos @ VDS = 20 V, VGS = 0 V, f = 1 kHz 0 2 0 0.01 0.1 ID – Drain Current (mA) 1 0 0 –1 –2 –3 –4 –5 VGS(off) – Gate-Source Cutoff Voltage (V) www.vishay.com 8-6 Document Number: 70252 S-04031—Rev. D, 04-Jun-01