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30PT100

30PT100

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    30PT100 - High Performance Schottky Generation 5.0, 30 A - Vishay Siliconix

  • 数据手册
  • 价格&库存
30PT100 数据手册
30PT100 Vishay High Power Products High Performance Schottky Generation 5.0, 30 A FEATURES Base cathode 2 • • • • • • • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency RoHS COMPLIANT TO-247AC (modified) 1 Cathode 3 Anode Increased ruggedness for reverse avalanche capability RBSOA available Negligible switching losses Submicron trench technology Full lead (Pb)-free and RoHS compliant devices Designed and qualified for industrial level APPLICATIONS PRODUCT SUMMARY IF(AV) VR 30 A 100 V • • • • • • • • High efficiency SMPS Automotive High frequency switching Output rectification Reverse battery protection Freewheeling Dc-to-dc systems Increased power density systems MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM VF TJ 30 Apk, TJ = 125 °C (typical) Range CHARACTERISTICS Rectangular waveform VALUES 30 100 0.61 - 55 to 175 UNITS A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL VR TEST CONDITIONS TJ = 25 °C 30PT100 100 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Non-repetitive avalanche energy Repetitive avalanche current SYMBOL IF(AV) IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 °C, IAS = 3 A, L = 30 mH Limited by frequency of operation and time pulse duration so that TJ < TJ max. IAS at TJ max. as a function of time pulse See fig. 8 TEST CONDITIONS 50 % duty cycle at TC = 156 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied VALUES 30 2200 450 135 IAS at TJ max. mJ A A UNITS Document Number: 94532 Revision: 22-Oct-07 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 30PT100 Vishay High Power Products High Performance Schottky Generation 5.0, 30 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 30 A Forward voltage drop VFM (1) TEST CONDITIONS TJ = 25 °C TJ = 125 °C TYP. TBD 1650 7.5 - MAX. 0.77 0.9 0.64 0.76 200 15 10 000 UNITS 60 A 30 A 60 A V Reverse leakage current Junction capacitance Series inductance Maximum voltage rate of change Note (1) Pulse width < 300 µs, duty cycle < 2 % IRM (1) CT LS dV/dt TJ = 25 °C TJ = 125 °C VR = Rated VR µA mA pF nH V/µs VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, case to heatsink Approximate weight minimum maximum JEDEC SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface, smooth and greased TEST CONDITIONS VALUES - 55 to 175 0.8 °C/W 0.25 6 0.21 6 (5) 12 (10) g oz. kgf · cm (lbf · in) UNITS °C Mounting torque Case style Marking device TO-247AC (modified) 30PT100 www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 94532 Revision: 22-Oct-07 30PT100 High Performance Vishay High Power Products Schottky Generation 5.0, 30 A 1000 Reverse Current - IR (mA) 100 175°C 10 150°C 125C 1 100°C 75°C 0.1 50°C 0.01 25°C Instantaneous Forward Current - IF (A) 100 Tj = 175°C 0.001 0 20 40 60 80 100 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10000 Tj = 125°C Junction Capacitance - CT (pF) 10 1000 Tj = 25°C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Forward Voltage Drop - VFM (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 100 0 20 40 60 80 100 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 Thermal Impedance ZthJC (°C/W) 1 D = 0.5 D = 0.33 D = 0.25 D = 0.2 D = 0.75 0.1 0.01 Single Pulse (Thermal Resistance) 0.001 1E-05 1E-04 1E-03 1E-02 1E-01 t1, Rectangular Pulse Duration (Seconds) 1E+00 Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94532 Revision: 22-Oct-07 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 30PT100 Vishay High Power Products High Performance Schottky Generation 5.0, 30 A 30 180 Allowable Case Temperature (°C) Average Power Loss - (Watts) 175 170 165 160 155 150 145 0 5 10 15 20 25 30 35 40 45 Average Forward Current - IF(AV) (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Square wave (D=0.50) 80% rated Vr applied see note (1) 25 20 15 10 5 0 0 180° 120° 90° 60° 30° DC RMS Limit DC 5 10 15 20 25 30 35 40 45 Average Forward Current - IF(AV) (A) Fig. 6 - Forward Power Loss Characteristics Non-Repetitive Surge Current - IFSM (A) 10000 1000 100 10 100 1000 10000 Square Wave Pulse Duration - tp (microsec) Fig. 7 - Maximum Non-Repetitive Surge Current Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 94532 Revision: 22-Oct-07 30PT100 High Performance Vishay High Power Products Schottky Generation 5.0, 30 A 1000 Avalanche Current (A) 100 Tj = 25°C Tj = 125°C 10 Tj = 175°C 1 1 10 100 Rectangular Pulse Duration ( μsec) Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration) 1000 Avalanche Energy (mJ) 100 Tj = 25°C 10 Tj = 125°C Tj = 175°C 1 1 10 100 Rectangular Pulse Duration ( μsec) Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration) Document Number: 94532 Revision: 22-Oct-07 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 30PT100 Vishay High Power Products High Performance Schottky Generation 5.0, 30 A ORDERING INFORMATION TABLE Device code 30 1 1 2 3 4 - P 2 T 3 100 4 Current rating (30 A) Package: P = TO-247 (modified) T = Trench Voltage code (100 V) Tube standard pack quantity: 25 pieces LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model http://www.vishay.com/doc?95253 http://www.vishay.com/doc?95255 http://www.vishay.com/doc?95232 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 94532 Revision: 22-Oct-07 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN® are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners. Document Number: 99901 Revision: 12-Mar-07 www.vishay.com 1
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