60EPF02PBF

VS-60EPF0.PbF, VS-60CPF0.PbF Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 60 A TO-247AC modified TO-247AC FEATURES • Designed and JEDEC-JESD47 qualified according to • Compliant to RoHS Directive 2002/95/EC Base cathode 2 Base cathode 2 APPLICATIONS • Output rectification and choppers and converters freewheeling in inverters, on 1 Cathode 3 Anode 1 Anode 3 Anode • Input rectifications where severe conducted EMI should be met restrictions VS-60EPF.. VS-60CPF.. DESCRIPTION The VS-60EPF..PbF and VS-60CPF..PbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. PRODUCT SUMMARY Package IF(AV) VR VF at IF IFSM trr TJ max. Diode variation Snap factor TO-247AC modified (2 pins), TO-247AC 60 A 200 V, 400 V, 600 V 1.3 V 830 A 70 ns 150 °C Single die 0.5 MAJOR RATINGS AND CHARACTERISTICS SYMBOL VRRM IF(AV) IFSM trr VF TJ 1 A, 100 A/μs 30 A, TJ = 25 °C Sinusoidal waveform CHARACTERISTICS VALUES 200 to 600 60 830 70 1.1 - 40 to 150 UNITS V A ns V °C VOLTAGE RATINGS PART NUMBER VS-60EPF02PbF, VS-60CPF02PbF VS-60EPF04PbF, VS-60CPF04PbF VS-60EPF06PbF, VS-60CPF06PbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 200 400 600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 300 500 700 5 IRRM AT 150 °C mA ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2t for fusing Revision: 18-Aug-11 SYMBOL IF(AV) IFSM I2t I2t TEST CONDITIONS TC = 106 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied VALUES 60 700 830 2450 3460 34 600 A2s A2s A UNITS Document Number: 94104 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPF0.PbF, VS-60CPF0.PbF Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 60 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VR = Rated VRRM VALUES 1.3 5.0 0.88 0.1 5.0 UNITS V m V mA RECOVERY CHARACTERISTICS PARAMETER Reverse recovery time Reverse recovery current Reverse recovery charge Snap factor SYMBOL trr Irr Qrr S TEST CONDITIONS IF at 60 Apk 25 A/μs 25 °C Typical VALUES 180 3.4 0.5 0.5 UNITS ns A μC dir dt IFM ta trr tb Qrr IRM(REC) t THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-247AC modified Case style TO-247AC SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 150 0.4 40 0.2 6 0.21 6 (5) 12 (10) g oz. kgf · cm (Ibf · in) °C/W UNITS °C Mounting torque Marking device 60EPF02, 60EPF04, 60EPF06 60CPF02, 60CPF04, 60CPF06 Revision: 18-Aug-11 Document Number: 94104 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPF0.PbF, VS-60CPF0.PbF Series www.vishay.com 150 140 Vishay Semiconductors Maximum Average Forward Power Loss (W) 180° 120° 90° 60° 30° RMS limit 60 40 20 0 Ø Maximum Allowable Case Temperature (°C) 140 130 120 110 100 30° 90 0 10 20 30 60.PF.. Series RthJC (DC) = 0.4 K/W 120 100 80 Ø Conduction angle DC Conduction period 60.PF.. Series TJ = 150 °C 0 20 40 60 80 100 60° 90° 40 120° 180° 60 70 50 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics 150 800 60.PF.. Series RthJC (DC) = 0.4 K/W 700 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 175 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Maximum Allowable Case Temperature (°C) 140 130 120 110 60° 100 90 0 20 40 30° Peak Half Sine Wave Forward Current (A) Ø 600 500 400 300 Conduction period 90° 120° 180° 60 DC 60.PF.. Series 200 100 1 10 100 80 Average Forward Current (A) Fig. 2 - Current Rating Characteristics Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 90 900 180° 120° 90° 60° 30° 800 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 195 °C No voltage reapplied Rated VRRM reapplied Maximum Average Forward Power Loss (W) 80 70 60 50 40 30 20 10 0 0 10 Peak Half Sine Wave Forward Current (A) 700 600 500 400 300 200 100 0.01 60.PF.. Series RMS limit Ø Conduction angle 60.PF.. Series TJ = 150 °C 20 30 40 50 60 70 0.1 1 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 18-Aug-11 Document Number: 94104 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPF0.PbF, VS-60CPF0.PbF Series www.vishay.com 1000 Vishay Semiconductors Instantaneous Forward Current (A) 100 TJ = 25 °C TJ = 150 °C 10 60.PF.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics 0.20 IFM = 60 A 4 60.PF.. Series TJ = 25 °C 3 IFM = 60 A IFM = 30 A 0.15 IFM = 10 A 0.10 IFM = 5 A 60.PF.. Series TJ = 25 °C 0.05 0 40 80 120 160 200 Qrr - Maximum Reverse Recovery Charge (µC) trr - Maximum Reverse Recovery Time (µs) 2 IFM = 30 A 1 IFM = 10 A IFM = 5 A IFM = 1 A IFM = 1 A 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 0.45 0.40 5 60.PF.. Series TJ = 150 °C IFM = 60 A IFM = 30 A 3 IFM = 10 A 2 IFM = 5 A 1 IFM = 1 A 0 10 20 30 40 50 60 70 80 90 100 10 20 30 40 50 60 70 80 90 100 Qrr - Maximum Reverse Recovery Charge (µC) trr - Maximum Reverse Recovery Time (µs) 4 0.35 0.30 0.25 0.20 0.15 0.10 60.PF.. Series TJ = 150 °C IFM = 60 A IFM = 30 A IFM = 10 A IFM = 5 A IFM = 1 A dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C Revision: 18-Aug-11 Document Number: 94104 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPF0.PbF, VS-60CPF0.PbF Series www.vishay.com 25 60.PF.. Series TJ = 25 °C IFM = 60 A 25 60.PF.. Series TJ = 150 °C Vishay Semiconductors Irr - Maximum Reverse Recovery Current (A) Irr - Maximum Reverse Recovery Current (A) 20 20 IFM = 60 A IFM = 30 A IFM = 10 A IFM = 5 A IFM = 1 A 15 IFM = 30 A IFM = 10 A 15 10 IFM = 5 A IFM = 1 A 10 5 5 0 0 40 80 120 160 200 0 10 20 30 40 50 60 70 80 90 100 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C ZthJC - Transient Thermal Impedance (K/W) 1 Steady state value (DC operation) 0.1 Single pulse D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 60.PF.. Series 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 18-Aug-11 Document Number: 94104 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPF0.PbF, VS-60CPF0.PbF Series www.vishay.com ORDERING INFORMATION TABLE Vishay Semiconductors Device code VS1 1 2 3 - 60 2 E 3 P 4 F 5 06 6 PbF 7 Vishay Semiconductors product Current rating (60 = 60 A) Circuit configuration: E = Single diode, 2 pins C = Single diode, 3 pins 4 5 6 7 - Package: P = TO-247AC/AC modified Type of silicon: F = Fast recovery Voltage code x 100 = VRRM PbF = Lead (Pb)-free 02 = 200 V 04 = 400 V 06 = 600 V LINKS TO RELATED DOCUMENTS Dimensions TO-247AC modified TO-247AC TO-247AC modified TO-247AC www.vishay.com/doc?95253 www.vishay.com/doc?95223 www.vishay.com/doc?95255 www.vishay.com/doc?95226 www.vishay.com/doc?95275 Part marking information SPICE model Revision: 18-Aug-11 Document Number: 94104 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com DIMENSIONS in millimeters and inches (3) B (2) R/2 Q 2xR (2) 1 (5) L1 C L See view B 2 x b2 3xb 0.10 M C A M 2x e b4 A1 C A (4) E1 0.01 M D B M View A - A 2 3 E N S A2 A D2 A (6) Ø P Ø K M DBM A (Datum B) FP1 Vishay Semiconductors D D Thermal pad 4 D1 (4) Planting (b1, b3, b5) Base metal D DE E C C Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode (c) c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - NOTES SYMBOL D2 E E1 e FK L L1 N P P1 Q R S 3 4 MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com DIMENSIONS in millimeters and inches (3) B (2) R/2 Q 2xR (2) 1 (5) L1 C L See view B 2 x b2 3xb 0.10 M C A M 2x e b4 A1 C A (4) E1 2 3 E N S A2 A D2 A (6) ΦP Ø K M DBM A (Datum B) ΦP1 Vishay Semiconductors D D Thermal pad 4 D1 (4) View A - A Planting (b1, b3, b5) Base metal D DE E C C Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode (c) c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - NOTES SYMBOL D2 E E1 e K L L1 N P P1 Q R S 3 4 MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerance per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 21-Jun-11 Document Number: 95253 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1